DF3A8.2LFV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A8.2LFV Product for Use Only as Protection against Electrostatic Discharge (ESD) 0.22±0.05 Symbol Rating Unit Power dissipation P 150 * mW Junction temperature Tj 150 °C Tstg −55~150 °C Storage temperature range 0.4 2 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 0.32±0.05 3 0.13±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristic 1 0.4 0.8±0.05 The mounting of two devices in an ultra-compact package enables a reduction in the number of parts and in the mounting cost. Low terminal capacitance: CT = 5.0 pF (typ.) 1.2±0.05 0.8±0.05 0.5±0.05 • 1.2±0.05 * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. • Unit: mm 1. CATHODE1 2. CATHODE2 3. ANODE VESM JEDEC ― JEITA ― TOSHIBA 1-1Q1B Weight: 0.0015 g (typ.) *: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt) 0.5mm 0.45mm 0.45mm 0.4mm Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Zener voltage VZ IZ = 5 mA 7.8 8.2 8.6 V Dynamic impedance ZZ IZ = 5 mA ⎯ ⎯ 60 Ω Reverse current IR VR = 5 V ⎯ ⎯ 0.5 μA Terminal capacitance (between Cathode and Anode) CT VR = 0 V, f = 1 MHz ⎯ 5.0 ⎯ pF 1 2007-11-01 DF3A8.2LFV Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 (contact discharge) ± 6 kV Criterion: No damage to device elements Marking Equivalent Circuit (top view) Q2 Q1 FU CT – V R IZ – V Z 10 100 m Ta = 25°C f = 1 MHz Total capacitance CT (pF) Zener current IZ (A) 10 m 1 m 100 μ 10 μ 1 μ 5 6 7 8 9 10 Zener voltage 11 12 VZ (V) 13 14 1 0 15 1 2 3 4 5 Reverse voltage 2 6 VR 7 8 9 10 (V) 2007-11-01 DF3A8.2LFV RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 3 2007-11-01