PD - 97011B
IRL3713PbF
IRL3713SPbF
IRL3713LPbF
SMPS MOSFET
Applications
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
l 100% RG Tested
l Lead-Free
HEXFET® Power MOSFET
l
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
VDSS
30V
TO-220AB
IRL3713PbF
RDS(on) max (mW)
ID
3.0@VGS = 10V
260A
D2 Pak
IRL3713SPbF
TO-262
IRL3713LPbF
Absolute Maximum Ratings
Max
Units
VDS
Symbol
Drain-Source Voltage
30
V
VGS
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
± 20
260
V
ID @ TC = 25°C
Parameter
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
h
h
180
1040h
c
PD @TC = 25°C
Maximum Power Dissipation
330
PD @Tc = 100°C
Maximum Power Dissipation
170
TJ, TSTG
Linear Derating Factor
Junction and Storage Temperature Range
A
W
2.2
-55 to +175
W/°C
°C
Thermal Resistance
Symbol
Parameter
RθJC
Junction-to-Case
i
RqCS
Case-to-Sink, Flat, Greased Surface
RθJA
Junction-to-Ambient
RθJA
Junction-to-Ambient (PCB Mount)
fi
f
gi
Typ
Max
–––
0.45*
0.50
–––
–––
62
–––
40
Units
°C/W
* RθJC (end of life) for D2Pak and TO-262 = 0.50°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes
through are on page 11
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1
07/22/05
IRL3713/S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
IGSS
Min
Typ
Max Units
30
–––
–––
–––
0.027
–––
–––
2.6
3.0
–––
3.3
4.0
1.0
–––
2.5
–––
50
–––
–––
20
–––
–––
100
Gate-to-Source Forward Leakage
–––
–––
200
Gate-to-Source Reverse Leakage
–––
–––
-200
Conditions
VGS = 0V, I D = 250µA
V/°C Reference to 25°C, I D = 1mA
mΩ
–––
Drain-to-Source Leakage Current
V
V
VGS = 10V, ID = 38A
VGS = 4.5V, I D = 30A
e
e
VDS = VGS, ID = 250µA
VDS = 30V, VGS = 0V
µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Forward Transconductance
Min
Typ
Max Units
76
–––
–––
S
Conditions
gfs
Qg
VDS = 15V, ID = 30A
Total Gate Charge
–––
75
110
Qgs
Gate-to-Source Charge
–––
24
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
37
–––
VGS = 4.5V
QOSS
Output Gate Charge
61
92
VGS = 0V, VDS = 15V
I D = 30A
nC
VDS = 15V
RG
Gate Resistance
0.5
–––
3.4
td(on)
Turn-On Delay Time
–––
16
–––
tr
Rise Time
–––
160
–––
td(off)
Turn-Off Delay Time
–––
40
–––
tf
Fall Time
–––
57
–––
VGS = 4.5V
Ciss
Input Capacitance
–––
5890
–––
VGS = 0V
Coss
Output Capacitance
–––
3130
–––
Crss
Reverse Transfer Capacitance
–––
630
–––
f
Ω
VDD = 15V
ns
pF
I D = 30A
RG = 1.8Ω
e
VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
IAR
Avalanche Current
c
d
Typ
Max
Units
–––
1530
mJ
–––
46
A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
ch
(Body Diode)
Min
Typ
Max Units
–––
–––
260
h
–––
––– 1040
h
–––
0.80
1.3
–––
0.68
–––
A
showing the
integral reverse
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
–––
75
110
ns
Qrr
Reverse Recovery Charge
–––
140
210
nC
trr
Reverse Recovery Time
–––
78
120
ns
Qrr
Reverse Recovery Charge
–––
160
240
nC
2
Conditions
MOSFET symbol
V
p-n junction diode.
TJ = 25°C, IS = 30A, VGS = 0V
e
e
TJ = 125°C, I S = 30A, VGS = 0V
TJ = 25°C, IF = 30A, VR = 0V
di/dt = 100A/µs
e
TJ = 125°C, I F = 30A, VR = 20V
di/dt = 100A/µs
e
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IRL3713/S/LPbF
1000
1000
VGS
10V
8.0V
6.0V
4.5V
4.0V
3.3V
2.8V
BOTTOM 2.5V
100
100
10
1
2.5V
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 175 ° C
TJ = 25 ° C
V DS = 15V
20µs PULSE WIDTH
3.0
3.5
4.0
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
2.0
VGS , Gate-to-Source Voltage (V)
1
VDS , Drain-to-Source Voltage (V)
1000
1
2.5
20µs PULSE WIDTH
TJ = 175 °C
1
0.1
100
Fig 1. Typical Output Characteristics
10
2.5V
10
VDS , Drain-to-Source Voltage (V)
100
VGS
10V
8.0V
6.0V
4.5V
4.0V
3.3V
2.8V
BOTTOM 2.5V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
4.5
ID = 260A
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRL3713/S/LPbF
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
C, Capacitance(pF)
Coss = Cds + Cgd
10000
Ciss
Coss
Crss
1000
VGS , Gate-to-Source Voltage (V)
14
100000
10
8
6
4
2
0
10
100
0
40
120
160
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
10000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 175 ° C
100
1000
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
80
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
10
TJ = 25 ° C
10us
100us
100
1
1ms
0.1
0.2
V GS = 0 V
0.4
0.6
0.8
1.0
1.2
1.4
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
VDS = 24V
VDS = 15V
VDS = 6V
12
100
1
ID = 30A
1.6
T C = 25 ° C
T J = 175° C
10ms
Single Pulse
10
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRL3713/S/LPbF
300
V DS
LIMITED BY PACKAGE
VGS
250
D.U.T.
RG
I D , Drain Current (A)
RD
+
-VDD
200
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
150
Fig 10a. Switching Time Test Circuit
100
VDS
50
0
90%
25
50
75
100
125
150
175
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
PDM
0.01
t1
t2
0.001
0.00001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRL3713/S/LPbF
EAS , Single Pulse Avalanche Energy (mJ)
3000
15V
TOP
2500
DRIVER
L
VDS
BOTTOM
ID
30A
38A
46A
2000
D.U.T
RG
20V
VGS
+
V
- DD
IAS
tp
A
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
1500
1000
500
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
10 V
50KΩ
12V
QGS
.2µF
.3µF
QGD
D.U.T.
VG
+
V
- DS
VGS
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRL3713/S/LPbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
RG
•
•
•
•
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRL3713/S/LPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
(;$03/( 7+,6,6$1,5)
/27&2'(
$66(0%/('21::
,17+($66(0%/</,1(&
Note: "P" in assembly line
position indicates "Lead-Free"
,17(51$7,21$/
5(&7,),(5
/2*2
$66(0%/<
/27&2'(
8
3$57180%(5
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IRL3713/S/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
7+,6,6$1,5)6:,7+
/27&2'(
$66(0%/('21::
,17+($66(0%/</,1(/
,17(51$7,21$/
5(&7,),(5
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$66(0%/<
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25
,17(51$7,21$/
5(&7,),(5
/2*2
$66(0%/<
/27&2'(
www.irf.com
3$57180%(5
)6
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9
IRL3713/S/LPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
(;$03/( 7+,6,6$1,5//
/27&2'(
$66(0%/('21::
,17+($66(0%/</,1(&
1RWH3LQDVVHPEO\OLQH
SRVLWLRQLQGLFDWHV/HDG)UHH
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5(&7,),(5
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OR
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5(&7,),(5
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3 '(6,*1$7(6/($')5((
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<($5 :((.
$ $66(0%/<6,7(&2'(
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IRL3713/S/LPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
Notes:
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.4mH, RG = 25Ω, IAS = 46A,VGS=10V.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is only applied to TO-220A package.
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint
and soldering techniques refer to application note #AN-994.
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
Rθ is measured at TJ approximately 90°C.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/05
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11