NTMFS4833N Power MOSFET 30 V, 191 A, Single N−Channel, SO−8 FL Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices* http://onsemi.com Applications • CPU Power Delivery • DC−DC Converters • Low Side Switching V(BR)DSS RDS(ON) MAX ID MAX 2.0 mW @ 10 V 30 V 191 A 3.0 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 26 A Continuous Drain Current RqJA (Note 1) TA = 25°C Power Dissipation RqJA (Note 1) TA = 25°C PD 2.35 W Continuous Drain Current RqJA (Note 2) TA = 25°C ID 16 A Power Dissipation RqJA (Note 2) TA = 85°C D (5,6) G (4) 19 S (1,2,3) N−CHANNEL MOSFET Steady State TA = 85°C TA = 25°C PD 0.91 TC = 25°C Power Dissipation RqJC (Note 1) TC = 25°C ID TC = 85°C TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) 138 PD 125 W IDM 288 A TJ, TSTG −55 to +150 °C IS 104 A dV/dt 6 V/ns Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 30 V, VGS = 10 V, IL = 35 Apk, L = 1.0 mH, RG = 25 W) EAS 612.5 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) SO−8 FLAT LEAD CASE 488AA STYLE 1 D 4833N AYWWG G D D A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION TL °C 260 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 S S S G 1 A 191 Drain to Source dV/dt November, 2006 − Rev. 2 MARKING DIAGRAM W D Continuous Drain Current RqJC (Note 1) Pulsed Drain Current 12 1 Device Package Shipping† NTMFS4833NT1G SO−8 FL 1500/Tape & Reel (Pb−Free) NTMFS4833NT3G SO−8 FL 5000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTMFS4833N/D NTMFS4833N THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction−to−Case (Drain) Parameter RqJC 1.0 Junction−to−Ambient – Steady State (Note 3) RqJA 53.2 Junction−to−Ambient – Steady State (Note 4) RqJA 137.8 Unit °C/W 3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V 17 VGS = 0 V, VDS = 24 V mV/°C TJ = 25 °C 1 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.5 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance VGS(TH)/TJ RDS(on) 1.5 7.12 VGS = 10 V to 11.5 V ID = 30 A 1.3 ID = 15 A 1.3 VGS = 4.5 V ID = 30 A 2.3 ID = 15 A 2.3 gFS VDS = 15 V, ID = 15 A mV/°C 2.0 3.0 30 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 5600 VGS = 0 V, f = 1 MHz, VDS = 12 V 1200 650 Total Gate Charge QG(TOT) 39 Threshold Gate Charge QG(TH) 6.0 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge pF VGS = 4.5 V, VDS = 15 V; ID = 30 A 16 58 nC 17 QG(TOT) VGS = 11.5 V, VDS = 15 V; ID = 30 A 88 nC SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 25 VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 34 35 tf 17 td(ON) 14 tr td(OFF) VGS = 11.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 19 50 10 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns ns NTMFS4833N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max TJ = 25°C − 0.8 1.0 TJ = 125°C − 0.68 − − 38 − − 19 − Unit DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time VSD VGS = 0 V, IS = 30 A tRR ta ns − 19 − QRR − 36 − nC Source Inductance LS − 0.50 − nH Drain Inductance LD − 0.005 − nH − 1.84 − nH − 1.0 − W Reverse Recovery Charge tb VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A V PACKAGE PARASITIC VALUES Gate Inductance LG Gate Resistance RG TA = 25°C 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 NTMFS4833N TYPICAL PERFORMANCE CURVES 200 4.2 V thru 10 V TJ = 25°C 3.8 V 150 125 3.6 V 100 3.4 V 75 50 3.2 V 25 3.0 V 2.8 V 175 150 125 100 TJ = 125°C 75 50 TJ = 25°C 25 TJ = −55°C 0 0 1 2 4 3 0 5 4 3 5 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0.010 ID = 30 A TJ = 25°C 0.008 0.006 0.004 0.002 0 2 8 6 4 10 12 0.004 TJ = 25°C 0.003 VGS = 4.5 V 0.002 VGS = 11.5 V 0.001 0 25 50 100 75 125 150 175 200 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 100,000 1.75 1.5 2 1 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) ID = 30 A VGS = 10 V VGS = 0 V IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (AMPS) 175 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) VDS ≥ 10 V VGS = 4.0 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (AMPS) 200 1.25 TJ = 150°C 10,000 1.0 0.75 0.5 TJ = 125°C 1,000 0.25 0 −50 100 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 4 30 NTMFS4833N TYPICAL PERFORMANCE CURVES 12 C, CAPACITANCE (pF) TJ = 25°C Ciss 7000 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 8000 VGS 10 6000 Ciss 5000 4000 Crss 3000 2000 Coss 1000 0 −10 VDS = 0 V −5 VGS = 0 V 0 VGS 5 10 15 20 25 VDS GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 8 6 Q1 4 2 ID = 30 A TJ = 25°C 0 0 IS, SOURCE CURRENT (AMPS) VDD = 15 V ID = 15 A VGS = 11.5 V td(off) tf 100 tr td(on) 50 20 30 60 70 40 QG, TOTAL GATE CHARGE (nC) 90 80 VGS = 0 V 25 TJ = 25°C 20 15 10 5 0 10 1 10 RG, GATE RESISTANCE (W) 100 100 ms RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 0.1 1 ms 10 ms dc 10 1 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 100 EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) 100 0.1 0.6 0.8 1.0 Figure 10. Diode Forward Voltage vs. Current 10 ms VGS = 20 V SINGLE PULSE TC = 25°C 0.4 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) 1000 10 0.2 0 Figure 9. Resistive Switching Time Variation vs. Gate Resistance I D, DRAIN CURRENT (AMPS) 10 30 1000 1 Q2 Figure 8. Gate−To−Source and Drain−To−Source Voltage vs. Total Charge Figure 7. Capacitance Variation t, TIME (ns) QT 650 600 550 500 450 400 350 300 250 200 150 100 50 0 ID = 35 A 25 Figure 11. Maximum Rated Forward Biased Safe Operating Area 50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 NTMFS4833N TYPICAL PERFORMANCE CURVES I D, DRAIN CURRENT (AMPS) 1000 100 25°C 100°C 10 125°C 1 1 10 1,000 100 PULSE WIDTH (ms) Figure 13. Avalanche Characteristics http://onsemi.com 6 10,000 NTMFS4833N PACKAGE DIMENSIONS SO−8 FLAT LEAD (DFN6) CASE 488AA−01 ISSUE B 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 6 2X 0.20 C 5 4X E1 q E 2 c 1 2 3 A1 4 TOP VIEW 0.10 C 3X C e SEATING PLANE DETAIL A A 0.10 C SIDE VIEW 8X C A B 0.05 c MILLIMETERS MIN NOM MAX 0.90 0.99 1.20 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.50 4.90 5.10 3.50 −−− 4.22 6.15 BSC 5.50 5.80 6.10 3.45 −−− 4.30 1.27 BSC 0.51 0.61 0.71 0.51 −−− −−− 0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ −−− 12 _ STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN DETAIL A b 0.10 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q e/2 L 1 4 K E2 L1 6 G M 5 D2 BOTTOM VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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