MMBT3904TT1 General Purpose Transistors MMBT3904TT1 – NPN Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT–416/SC–75 package which is designed for low power surface mount applications. • Device Marking: http://onsemi.com GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT MMBT3904TT1 = AM MAXIMUM RATINGS (TA = 25°C) MMBT3904TT1 Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 6.0 Vdc IC 200 mAdc Rating Collector Current – Continuous COLLECTOR 3 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation, FR–4 Board (1) TA = 25°C Derated above 25°C PD Thermal Resistance, Junction to Ambient (1) RθJA Total Device Dissipation, FR–4 Board (2) TA = 25°C Derated above 25°C PD Thermal Resistance, Junction to Ambient (2) Junction and Storage Temperature Range Max Unit 200 mW 1.6 mW/°C 600 °C/W 3 300 mW 2.4 mW/°C RθJA 400 °C/W TJ, Tstg –55 to +150 °C 2 1 CASE 463 SOT–416/SC–75 STYLE 1 DEVICE MARKING (1) FR–4 @ Minimum Pad (2) FR–4 @ 1.0 × 1.0 Inch Pad See Table ORDERING INFORMATION Semiconductor Components Industries, LLC, 2001 October, 2001 – Rev. 1 1 Device Package Shipping MMBT3904TT1 SOT–416 3000 / Tape & Reel Publication Order Number: MMBT3904TT1/D MMBT3904TT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 40 –40 – – 60 –40 – – 6.0 –5.0 – – – – 50 –50 – – 50 –50 40 70 100 60 30 – – 300 – – – – 0.2 0.3 0.65 – 0.85 0.95 Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (3) (IC = 1.0 mAdc, IB = 0) V(BR)CEO Collector–Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO Emitter–Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) IBL Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX Vdc Vdc Vdc nAdc nAdc ON CHARACTERISTICS (3) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) hFE Collector–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Base–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) – Vdc Vdc r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE (3) Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 1.0 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 Figure 1. Normalized Thermal Response http://onsemi.com 2 10 100 1000 MMBT3904TT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit SMALL–SIGNAL CHARACTERISTICS Current–Gain – Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) fT MHz 300 – – 4.0 – 8.0 1.0 10 0.5 8.0 100 400 1.0 40 – 5.0 td tr – 35 – 35 ts tf – 200 – 50 Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hie Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hre Small–Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hfe Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hoe Noise Figure (VCE = 5.0 Vdc, IC = 100 Adc, RS = 1.0 k Ω, f = 1.0 kHz) NF pF pF kΩ X 10–4 – mhos dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time DUTY CYCLE = 2% 300 ns (VCC = 3.0 Vdc, VBE = –0.5 Vdc) (IC = 10 mAdc, IB1 = 1.0 mAdc) MMBT3904TT1 MMBT3904TT1 (VCC = 3.0 Vdc, IC = 10 mAdc) (IB1 = IB2 = 1.0 mAdc) +3 V +10.9 V MMBT3904TT1 MMBT3904TT1 275 DUTY CYCLE = 2% 10 k -0.5 V t1 10 < t1 < 500 s ns +3 V +10.9 V 275 10 k 0 CS < 4 pF* < 1 ns ns 1N916 -9.1 V CS < 4 pF* < 1 ns * Total shunt capacitance of test jig and connectors Figure 2. Delay and Rise Time Equivalent Test Circuit Figure 3. Storage and Fall Time Equivalent Test Circuit http://onsemi.com 3 MMBT3904TT1 TYPICAL TRANSIENT CHARACTERISTICS TJ = 25°C TJ = 125°C 10 5000 Q, CHARGE (pC) CAPACITANCE (pF) 2000 5.0 Cibo 3.0 Cobo 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 2.0 3.0 5.0 7.0 10 20 30 50 70 100 Figure 5. Charge Data 200 500 IC/IB = 10 VCC = 40 V IC/IB = 10 300 tr @ VCC = 3.0 V 30 20 40 V t r, RISE TIME (ns) 200 15 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC/IB = 20 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 6. Turn–On Time Figure 7. Rise Time IC/IB = 10 IC/IB = 10 30 20 5.0 7.0 10 20 30 50 70 100 200 500 t′s = ts - 1/8 tf IB1 = IB2 IC/IB = 20 2.0 3.0 30 20 IC, COLLECTOR CURRENT (mA) 100 70 50 1.0 100 70 50 10 7 5 2.0 V VCC = 40 V IB1 = IB2 300 200 t f , FALL TIME (ns) TIME (ns) 1.0 Figure 4. Capacitance 500 t s′ , STORAGE TIME (ns) QA IC, COLLECTOR CURRENT (mA) 100 70 50 10 7 5 QT 300 200 REVERSE BIAS VOLTAGE (VOLTS) 300 200 300 200 1000 700 500 100 70 50 500 10 7 5 VCC = 40 V IC/IB = 10 3000 7.0 IC/IB = 10 30 20 10 7 5 200 IC/IB = 20 100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 8. Storage Time Figure 9. Fall Time http://onsemi.com 4 200 MMBT3904TT1 TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 14 12 SOURCE RESISTANCE = 200 IC = 1.0 mA SOURCE RESISTANCE = 200 IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1.0 k IC = 50 A 4 2 0 0.1 SOURCE RESISTANCE = 500 IC = 100 A 0.2 0.4 1.0 2.0 f = 1.0 kHz 12 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 IC = 1.0 mA IC = 0.5 mA 10 IC = 50 A 8 IC = 100 A 6 4 2 4.0 10 20 40 0 0.1 100 0.2 0.4 1.0 2.0 4.0 10 20 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS) Figure 10. Noise Figure Figure 11. Noise Figure 40 100 5.0 10 5.0 10 h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C) 100 hoe, OUTPUT ADMITTANCE ( mhos) 300 h fe , CURRENT GAIN 200 100 70 50 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 50 20 10 5 2 1 10 0.1 0.2 Figure 12. Current Gain Figure 13. Output Admittance h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) h ie , INPUT IMPEDANCE (k OHMS) 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 10 0.1 Figure 14. Input Impedance 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 15. Voltage Feedback Ratio http://onsemi.com 5 MMBT3904TT1 h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125°C VCE = 1.0 V MMBT3904WT1 +25°C 1.0 0.7 -55°C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 16. DC Current Gain 1.0 TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 17. Collector Saturation Region 1.0 TJ = 25°C VBE(sat) @ IC/IB =10 V, VOLTAGE (VOLTS) 1.0 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 VC FOR VCE(sat) 0 -55°C TO +25°C -0.5 -55°C TO +25°C -1.0 +25°C TO +125°C VB FOR VBE(sat) -1.5 0.2 0 +25°C TO +125°C 0.5 COEFFICIENT (mV/ °C) 1.2 1.0 2.0 5.0 10 20 50 100 -2.0 200 0 20 40 60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 18. “ON” Voltages Figure 19. Temperature Coefficients http://onsemi.com 6 180 200 MMBT3904TT1 INFORMATION FOR USING THE SOT–416 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ 0.5 min. (3x) Unit: mm 1 TYPICAL SOLDERING PATTERN 0.5 0.5 min. (3x) 1.4 SOT–416/SC–90 POWER DISSIPATION The power dissipation of the SOT–416/SC–90 is a function of the pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet, PD can be calculated as follows. PD = the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 125 milliwatts. PD = 150°C – 25°C 833°C/W = 150 milliwatts The 833°C/W assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, a higher power dissipation can be achieved using the same footprint. TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into SOLDERING PRECAUTIONS • The soldering temperature and time should not exceed The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10°C. 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient should be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 7 MMBT3904TT1 SOLDER STENCIL GUIDELINES The stencil opening size for the surface mounted package should be the same as the pad size on the printed circuit board, i.e., a 1:1 registration. Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. A solder stencil is required to screen the optimum amount of solder paste onto the footprint. The stencil is made of brass or stainless steel with a typical thickness of 0.008 inches. TYPICAL SOLDER HEATING PROFILE The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177–189°C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings make up a heating “profile” for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 7 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. STEP 1 PREHEAT ZONE 1 RAMP" 200°C 150°C STEP 5 STEP 4 HEATING HEATING ZONES 3 & 6 ZONES 4 & 7 SPIKE" SOAK" STEP 2 STEP 3 VENT HEATING SOAK" ZONES 2 & 5 RAMP" DESIRED CURVE FOR HIGH MASS ASSEMBLIES 205° TO 219°C PEAK AT SOLDER JOINT 170°C 160°C 150°C 140°C 100°C 100°C 50°C STEP 6 STEP 7 VENT COOLING SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES TIME (3 TO 7 MINUTES TOTAL) TMAX Figure 20. Typical Solder Heating Profile http://onsemi.com 8 MMBT3904TT1 PACKAGE DIMENSIONS SC–75 (SC–90, SOT–416) CASE 463–01 ISSUE B –A– S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 2 3 D 3 PL 0.20 (0.008) G –B– 1 M B K J DIM A B C D G H J K L S 0.20 (0.008) A C L STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR MILLIMETERS MIN MAX 0.70 0.80 1.40 1.80 0.60 0.90 0.15 0.30 1.00 BSC --0.10 0.10 0.25 1.45 1.75 0.10 0.20 0.50 BSC H STYLE 2: PIN 1. ANODE 2. N/C 3. CATHODE STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE http://onsemi.com 9 STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE INCHES MIN MAX 0.028 0.031 0.055 0.071 0.024 0.035 0.006 0.012 0.039 BSC --0.004 0.004 0.010 0.057 0.069 0.004 0.008 0.020 BSC MMBT3904TT1 Notes http://onsemi.com 10 MMBT3904TT1 Notes http://onsemi.com 11 MMBT3904TT1 Thermal Clad is a trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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