HGT1S20N60A4S9A Data Sheet March 2006 600V, SMPS Series N-Channel IGBTs Features The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. • >100kHz Operation at 390V, 20A • 200kHz Operation at 390V, 12A • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at TJ = 125oC • Low Conduction Loss This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. • Temperature Compensating SABER™ Model www.intersil.com Formerly Developmental Type TA49339. Packaging Ordering Information • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards JEDEC TO-263AB PART NUMBER PACKAGE BRAND HGT1S20N60A4S9A TO-263AB 20N60A4 COLLECTOR (FLANGE) NOTE: When ordering, use the entire part number. G C E Symbol C G E FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 ©2006 Fairchild Semiconductor Corporation HGT1S20N60A4S9A Rev. A HGT1S20N60A4S9A Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGT1S20N60A4S9A UNITS 600 V At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 70 A At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 40 A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 280 A Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 100A at 600V Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 290 W Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.32 W/oC Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. Electrical Specifications TJ = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS - V Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - Emitter to Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V Collector to Emitter Leakage Current ICES VCE = 600V 15 - - V TJ = 25oC - - 250 µA TJ = 125oC - - 2.0 mA TJ = 25oC TJ = 125oC - 1.8 2.7 V Collector to Emitter Saturation Voltage VCE(SAT) IC = 20A, VGE = 15V Gate to Emitter Threshold Voltage VGE(TH) IC = 250µA, VCE = 600V Gate to Emitter Leakage Current IGES - 1.6 2.0 V 4.5 5.5 7.0 V - - ±250 nA 100 - - A - 8.6 - V VGE = 15V - 142 162 nC VGE = 20V - 182 210 nC - 15 - ns - 12 - ns - 73 - ns VGE = ±20V Switching SOA SSOA TJ = 150oC, RG = 3Ω, VGE = 15V L = 100µH, VCE = 600V Gate to Emitter Plateau Voltage VGEP IC = 20A, VCE = 300V On-State Gate Charge Qg(ON) IC = 20A, VCE = 300V Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25oC ICE = 20A VCE = 390V VGE =15V RG = 3Ω L = 500µH Test Circuit (Figure 20) Current Rise Time Current Turn-Off Delay Time Current Fall Time trI td(OFF)I tfI - 32 - ns - 105 - µJ EON2 - 280 350 µJ EOFF - 150 200 µJ Turn-On Energy (Note 3) EON1 Turn-On Energy (Note 3) Turn-Off Energy (Note 2) ©2006 Fairchild Semiconductor Corporation HGT1S20N60A4S9A Rev. A HGT1S20N60A4S9A Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL Current Turn-On Delay Time TEST CONDITIONS td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time MIN TYP MAX UNITS - 15 21 ns IGBT and Diode at TJ = 125oC ICE = 20A VCE = 390V VGE = 15V RG = 3Ω tfI L = 500µH Test Circuit (Figure 20) - 13 18 ns - 105 135 ns - 55 73 ns - 115 - µJ µJ Turn-On Energy (Note 3) EON1 Turn-On Energy (Note 3) EON2 - 510 600 Turn-Off Energy (Note 2) EOFF - 330 500 µJ 0.43 oC/W Thermal Resistance Junction To Case RθJC - - NOTES: 2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 20. Unless Otherwise Specified VGE = 15V DIE CAPABILITY 80 PACKAGE LIMIT 60 40 20 0 25 50 75 100 125 150 120 TJ = 150oC, RG = 3Ω, VGE = 15V, L = 100µH 100 80 60 40 20 0 0 FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA fMAX, OPERATING FREQUENCY (kHz) 500 TC VGE 75oC 15V 300 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) 100 fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 0.43oC/W, SEE NOTES TJ = 125oC, RG = 3Ω, L = 500µH, V CE = 390V 40 5 10 20 30 40 50 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT ©2006 Fairchild Semiconductor Corporation tSC , SHORT CIRCUIT WITHSTAND TIME (µs) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE 700 100 200 300 400 500 600 VCE, COLLECTOR TO EMITTER VOLTAGE (V) TC , CASE TEMPERATURE (oC) 14 450 VCE = 390V, RG = 3Ω, TJ = 125oC 12 400 ISC 10 350 8 300 6 250 4 200 tSC 2 0 150 10 11 12 13 14 15 100 ISC, PEAK SHORT CIRCUIT CURRENT (A) ICE , DC COLLECTOR CURRENT (A) 100 ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 4. SHORT CIRCUIT WITHSTAND TIME HGT1S20N60A4S9A Rev. A HGT1S20N60A4S9A 100 Unless Otherwise Specified (Continued) DUTY CYCLE < 0.5%, VGE = 12V PULSE DURATION = 250µs 80 60 40 TJ = 125oC 20 0 TJ = 25oC TJ = 150oC 0 0.8 1.2 0.4 1.6 2.0 2.4 2.8 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 3.2 TJ = 125oC, VGE = 12V, VGE = 15V 800 600 400 0 TJ = 25oC, VGE = 12V, VGE = 15V 10 15 20 25 30 35 ICE , COLLECTOR TO EMITTER CURRENT (A) 20 0 TJ = 150oC 0 0.4 0.8 1.2 TJ = 25oC 1.6 2.0 2.4 2.8 RG = 3Ω, L = 500µH, VCE = 390V 700 600 500 TJ = 125oC, VGE = 12V OR 15V 400 300 200 TJ = 25oC, VGE = 12V OR 15V 100 5 15 20 25 30 35 40 36 RG = 3Ω, L = 500µH, VCE = 390V 32 TJ = 25oC, TJ = 125oC, VGE = 12V 16 14 12 10 FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT trI , RISE TIME (ns) td(ON)I, TURN-ON DELAY TIME (ns) TJ = 125oC ICE , COLLECTOR TO EMITTER CURRENT (A) 18 TJ = 25oC, TJ = 125oC, VGE = 12V 28 24 20 16 12 TJ = 25oC, TJ = 125oC, VGE = 15V 10 8 40 40 RG = 3Ω, L = 500 µH, VCE = 390V 20 60 0 5 FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 22 80 FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE EOFF, TURN-OFF ENERGY LOSS (µJ) EON2 , TURN-ON ENERGY LOSS (µJ) 1200 200 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250µs 800 RG = 3Ω, L = 500µH, VCE = 390V 1000 100 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE 1400 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves TJ = 25oC OR TJ = 125oC, VGE = 15V 8 4 5 10 15 20 25 30 35 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT ©2006 Fairchild Semiconductor Corporation 40 5 10 15 20 25 30 35 40 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT HGT1S20N60A4S9A Rev. A HGT1S20N60A4S9A Typical Performance Curves Unless Otherwise Specified (Continued) 80 RG = 3Ω, L = 500µH, VCE = 390V RG = 3Ω, L = 500µH, VCE = 390V 72 110 VGE = 12V, VGE = 15V, TJ = 125oC tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) 120 100 90 80 VGE = 12V, VGE = 15V, TJ = 25oC 64 TJ = 125oC, VGE = 12V OR 15V 56 48 TJ = 25oC, VGE = 12V OR 15V 40 32 70 24 60 5 10 15 20 25 30 35 16 40 5 10 ICE , COLLECTOR TO EMITTER CURRENT (A) 16 240 DUTY CYCLE < 0.5%, VCE = 10V PULSE DURATION = 250µs 160 120 TJ = 25oC 80 TJ = 125oC TJ = -55oC 40 0 6 7 8 9 10 11 12 VCE = 600V 10 0.8 ICE = 20A ICE = 10A 0.2 0 50 75 100 125 TC , CASE TEMPERATURE (oC) FIGURE 15. TOTAL SWITCHING LOSS vs CASE TEMPERATURE ©2006 Fairchild Semiconductor Corporation 150 ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) ICE = 30A 1.0 25 VCE = 400V VCE = 200V 6 4 2 0 20 40 60 80 100 120 140 160 FIGURE 14. GATE CHARGE WAVEFORMS ETOTAL = EON2 + EOFF 0.4 40 QG , GATE CHARGE (nC) 1.4 0.6 35 8 0 12 RG = 3Ω, L = 500µH, VCE = 390V, VGE = 15V 1.2 30 IG(REF) = 1mA, RL = 15Ω, TJ = 25oC FIGURE 13. TRANSFER CHARACTERISTIC 1.6 25 14 VGE, GATE TO EMITTER VOLTAGE (V) 1.8 20 FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT VGE, GATE TO EMITTER VOLTAGE (V) ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 200 15 ICE , COLLECTOR TO EMITTER CURRENT (A) TJ = 125oC, L = 500µH, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF 10 ICE = 30A 1 ICE = 20A ICE = 10A 0.1 3 10 1000 100 RG, GATE RESISTANCE (Ω) FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE HGT1S20N60A4S9A Rev. A HGT1S20N60A4S9A Typical Performance Curves 5 C, CAPACITANCE (nF) FREQUENCY = 1MHz 4 3 CIES 2 1 COES CRES 0 0 20 40 60 80 100 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Unless Otherwise Specified (Continued) 2.2 DUTY CYCLE < 0.5%, TJ = 25oC PULSE DURATION = 250µs, 2.1 2.0 ICE = 30A ICE = 20A 1.9 1.8 ICE = 10A 1.7 8 9 FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE ZθJC , NORMALIZED THERMAL RESPONSE 10 11 12 13 14 15 16 VGE, GATE TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs GATE TO EMITTER VOLTAGE 100 0.5 0.2 10-1 0.1 t1 0.05 PD 0.02 0.01 10-2 t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC SINGLE PULSE 10-5 10-4 10-3 10-2 10-1 100 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms HGTG20N60A4D DIODE TA49372 90% 10% VGE EON2 L = 500 µH EOFF VCE RG = 3Ω 90% DUT + - VDD = 390V ICE 10% td(OFF)I tfI trI td(ON)I FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT ©2006 Fairchild Semiconductor Corporation FIGURE 21. SWITCHING TEST WAVEFORMS HGT1S20N60A4S9A Rev. A HGT1S20N60A4S9A Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2 ; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than T JM . fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC . The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 21. E ON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. ©2006 Fairchild Semiconductor Corporation HGT1S20N60A4S9A Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST® FASTr™ ActiveArray™ FPS™ Bottomless™ FRFET™ Build it Now™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ I2C™ EcoSPARK™ i-Lo™ E2CMOS™ ImpliedDisconnect™ EnSigna™ IntelliMAX™ FACT™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ μSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UniFET™ UltraFET® VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19