ABB 5SNE0800E3301

VCE
IC
=
=
3300 V
800 A
ABB HiPakTM
IGBT Module
5SNE 0800E330100
PRELIMINARY
Doc. No. 5SYA1562-01 July 07
• Low-loss, rugged SPT chip-set
• Smooth switching SPT chip-set for
good EMC
• Industry standard package
• High power density
• AlSiC base-plate for high power
cycling capability
• AlN substrate for low thermal
resistance
Maximum rated values
1)
Parameter
Symbol
Collector-emitter voltage
max
Unit
VGE = 0 V, Tvj ≥ 25 °C
3300
V
IC
Tc = 80 °C
800
A
Peak collector current
ICM
tp = 1 ms, Tc = 80 °C
1600
A
20
V
Tc = 25 °C, per switch (IGBT)
7700
W
Either diode
800
A
1600
A
8000
A
10
µs
6000
V
150
°C
Total power dissipation
DC forward current
VGES
Ptot
IF
Peak forward current
IFRM
Surge current
IFSM
-20
VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave, either diode
IGBT short circuit SOA
tpsc
VCC = 2500 V, VCEM CHIP ≤ 3300 V
VGE ≤ 15 V, Tvj ≤ 125 °C
Isolation voltage
Visol
t = 1 min, f = 50 Hz
Junction temperature
Tvj
Junction operating temperature
Tvj(op)
-40
125
°C
Case temperature
Tc
-40
125
°C
Storage temperature
Tstg
-40
125
°C
Mounting torques
2)
min
DC collector current
Gate-emitter voltage
1)
VCES
Conditions
2)
Ms
Base-heatsink, M6 screws
4
6
Mt1
Main terminals, M8 screws
8
10
Mt2
Auxiliary terminals, M4 screws
2
3
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
For detailed mounting instructions refer to ABB Document No. 5SYA2039
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Nm
5SNE 0800E330100
IGBT characteristic values
3)
Parameter
Symbol
Conditions
min
Collector (-emitter)
breakdown voltage
V(BR)CES
VGE = 0 V, IC = 10 mA, Tvj = 25 °C
3300
Collector-emitter 4)
saturation voltage
VCE sat
IC = 800 A, VGE = 15 V
typ
max
Unit
V
Tvj = 25 °C
2.7
3.1
3.4
V
Tvj = 125 °C
3.5
3.8
4.3
V
Tvj = 25 °C
8
mA
Tvj = 125 °C
80
mA
Collector cut-off current
ICES
VCE = 3300 V, VGE = 0 V
Gate leakage current
IGES
VCE = 0 V, VGE = ±20 V, Tvj = 125 °C
-500
500
nA
VGE(TO)
IC = 160 mA, VCE = VGE, Tvj = 25 °C
5.5
7.5
V
Gate-emitter threshold voltage
Gate charge
Qge
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Turn-on delay time
td(on)
Rise time
Turn-off delay time
Fall time
Turn-on switching energy
Turn-off switching energy
Short circuit current
tr
td(off)
tf
Eon
Eoff
ISC
IC = 800 A, VCE = 1800 V,
VGE = -15 V .. 15 V
7.71
nF
1.48
VCC = 1800 V,
IC = 800 A,
RG = 2.2 Ω,
VGE = ±15 V,
Lσ = 100 nH, inductive load
Tvj = 25 °C
525
Tvj = 125 °C
525
Tvj = 25 °C
190
Tvj = 125 °C
200
VCC = 1800 V,
IC = 800 A,
RG = 2.2 Ω,
VGE = ±15 V,
Lσ = 100 nH, inductive load
Tvj = 25 °C
1060
Tvj = 125 °C
1210
Tvj = 25 °C
340
Tvj = 125 °C
460
VCC = 1800 V, IC = 800 A,
VGE = ±15 V, RG = 2.2 Ω,
Lσ = 100 nH, inductive load
Tvj = 25 °C
1000
Tvj = 125 °C
1380
VCC = 1800 V, IC = 800 A,
VGE = ±15 V, RG = 2.2 Ω,
Lσ = 100 nH, inductive load
Tvj = 25 °C
880
Tvj = 125 °C
1250
tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,
VCC = 2500 V, VCEM CHIP ≤ 3300 V
Lσ CE
Leg 1 + 2 parallel
Resistance, terminal-chip
RCC’+EE’
Leg 1 + 2 parallel
4)
µC
125
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C
Module stray inductance
3)
8.07
ns
ns
ns
ns
mJ
mJ
3300
A
15
nH
TC = 25 °C
0.09
TC = 125 °C
0.13
mΩ
Characteristic values according to IEC 60747 – 9
Collector-emitter saturation voltage is given at chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1562-01 July 07
page 2 of 9
5SNE 0800E330100
Diode characteristic values
Parameter
Forward voltage
5)
Symbol
VF
6)
Reverse recovery current
Irr
Recovered charge
Qrr
Reverse recovery time
trr
Conditions
IF = 800 A
VCC = 1800 V,
IF = 800 A,
VGE = ±15 V,
RG = 2.2 Ω
Lσ = 100 nH
inductive load
Reverse recovery energy
Erec
Stray inductance
Lσ AC
Leg 3
RAA’+CC’
Leg 3
Resistance, terminal-chip
5)
6)
min
typ
max
Tvj = 25 °C
2.0
2.3
2.6
Tvj = 125 °C
2.0
2.35
2.6
Tvj = 25 °C
710
Tvj = 125 °C
950
Tvj = 25 °C
500
Tvj = 125 °C
930
Tvj = 25 °C
850
Tvj = 125 °C
1550
Tvj = 25 °C
620
Tvj = 125 °C
1180
0.18
TC = 125 °C
0.26
V
A
µC
ns
mJ
30
TC = 25 °C
Unit
nH
mΩ
Characteristic values according to IEC 60747 – 2
Forward voltage is given at chip level
Thermal properties
7)
Parameter
Symbol
IGBT thermal resistance
junction to case
Rth(j-c)IGBT
0.013 K/W
Diode thermal resistance
junction to case
Rth(j-c)DIODE
0.025 K/W
IGBT thermal resistance
case to heatsink
2)
Diode thermal resistance
case to heatsink
2)
2)
Conditions
min
max
Unit
Rth(c-s)IGBT IGBT per switch, λ grease = 1W/m x K
0.012
K/W
Rth(c-s)DIODE Diode per switch, λ grease = 1W/m x K
0.024
K/W
For detailed mounting instructions refer to ABB Document No. 5SYA2039
Mechanical properties
Parameter
Dimensions
7)
Symbol
x
L W
x
Conditions
H Typical , see outline drawing
min
typ
x
max
x
190 140 38
Clearance distance in air
da
according to IEC 60664-1 Term. to base:
and EN 50124-1
Term. to term:
23
Surface creepage distance
ds
according to IEC 60664-1 Term. to base:
and EN 50124-1
Term. to term:
33
Mass
m
7)
typ
Unit
mm
mm
19
mm
32
1380
g
Thermal and mechanical properties according to IEC 60747 – 15
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1562-01 July 07
page 3 of 9
5SNE 0800E330100
Electrical configuration
Outline drawing
2)
Note: all dimensions are shown in mm
2)
For detailed mounting instructions refer to ABB Document No. 5SYA2039
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.
This product has been designed and qualified for Industrial Level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1562-01 July 07
page 4 of 9
5SNE 0800E330100
1600
1600
VCE = 20 V
1400
1400
1200
1200
25 °C
1000
125 °C
IC [A]
IC [A]
1000
800
600
800
600
125 °C
400
400
200
200
25 °C
VGE = 15 V
0
0
0
1
2
3
4
5
0
6
1
2
3
4
Fig. 2
Typical on-state characteristics, chip level
7
8
9 10 11 12 13
Typical transfer characteristics, chip level
1600
1600
17 V
1400
17 V
1400
15 V
15 V
1200
1200
13 V
13 V
11 V
11 V
1000
IC [A]
1000
IC [A]
6
VGE [V]
VCE [V]
Fig. 1
5
800
800
600
600
400
400
9V
9V
200
200
Tvj = 125 °C
Tvj = 25°C
0
0
0
1
2
3
4
5
0
VCE [V]
Fig. 3
Typical output characteristics, chip level
1
2
3
4
5
6
7
VCE [V]
Fig. 4
Typical output characteristics, chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1562-01 July 07
page 5 of 9
5SNE 0800E330100
4.0
7.0
VCC = 1800 V
VGE = ±15 V
R G = 2.2 ohm
Tvj = 125 °C
Lσ = 100 nH
3.5
3.0
VCC = 1800 V
IC = 800 A
VGE = ±15 V
Tvj = 125 °C
L σ = 100 nH
E on
6.0
5.0
E on
E off
E on, E off [J]
E on, E off [J]
2.5
2.0
4.0
3.0
1.5
E off
2.0
1.0
1.0
0.5
E sw [J] = 1.03 x 10 -6 x I C2 + 1.86 x 10 -3 x I C + 419 x 10-3
0.0
0.0
0
400
800
1200
0
1600
5
10
Fig. 5
Typical switching energies per pulse
vs collector current
Fig. 6
10
25
10
VCC = 1800 V
IC = 800 A
VGE = ±15 V
Tvj = 125 °C
L σ = 100 nH
tf
1
t d(on) , t r, t d(off) , t f [µs]
td(on) , t r, t d(off) , t f [µs]
20
Typical switching energies per pulse
vs gate resistor
t d(off)
t d(on)
0.1
tr
td(off)
td(on)
tr
1
tf
VCC = 1800 V
RG = 2.2 ohm
VGE = ±15 V
Tvj = 125 °C
Lσ = 100 nH
0.1
0.01
0
400
800
1200
0
1600
Typical switching times
vs collector current
5
10
15
20
25
R G [ohm]
IC [A]
Fig. 7
15
R G [ohm]
IC [A]
Fig. 8
Typical switching times
vs gate resistor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1562-01 July 07
page 6 of 9
5SNE 0800E330100
1000
20
VGE = 0V
f OSC = 1 MHz
VOSC = 50 mV
Cies
15
VCC = 1800 V
V GE [V]
C [nF]
100
Coes
VCC = 2500 V
10
10
5
Cres
IC = 800 A
Tvj = 25 °C
0
1
0
Fig. 9
5
10
15
20
V CE [V]
25
30
0
35
Typical capacitances
vs collector-emitter voltage
Fig. 10
1
2
3
4
Q g [µC]
5
6
7
8
Typical gate charge characteristics
2.5
VCC ≤ 2500 V, Tvj = 125 °C
VGE = ±15 V, RG = 2.2 ohm
2
ICpulse / I C
1.5
1
0.5
Chip
Module
0
0
500
1000
1500
2000
2500
3000
3500
VCE [V]
Fig. 11
Turn-off safe operating area (RBSOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1562-01 July 07
page 7 of 9
5SNE 0800E330100
1500
1200
Q rr
500
E rec
400
R G = 22 ohm
200
E rec [mJ] = -600 x 10 -6 x I F2 + 1.72 x I F + 190
0
0
0
400
800
1200
0
1600
1
VCC = 1800 V
IF = 800 A
Tvj = 125 °C
L σ = 100 nH
2
3
4
di/dt [kA/µs]
IF [A]
Fig. 12
R G = 2.7 ohm
600
Irr
250
R G = 3.3 ohm
750
Q rr
R G = 5.6 ohm
Irr
800
R G = 8.2
ohm
1000
R G = 2.2 ohm
1000
E rec [mJ],I rr [A], Q rr [µC]
E rec [mJ], I rr [A], Q rr [µC]
1250
E rec
R G = 15 ohm
VCC = 1800 V
VGE = ±15 V
R G = 2.2 ohm
Tvj = 125 °C
L σ = 100 nH
Typical reverse recovery characteristics
vs forward current
Fig. 13
Typical reverse recovery characteristics
vs di/dt
2000
1600
VCC ≤ 2500 V
di/dt ≤ 5000 A/µs
Tvj = 125 °C
1400
1600
25°C
1200
125°C
1200
IR [A]
IF [A]
1000
800
800
600
400
400
200
0
0
0
1
2
3
0
4
Typical diode forward characteristics,
chip level
1000 1500 2000 2500
3000 3500
VR [V]
VF [V]
Fig. 14
500
Fig. 15
Safe operating area diode (SOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1562-01 July 07
page 8 of 9
5SNE 0800E330100
0.1
Analytical function for transient thermal
impedance:
0.01
n
Z th (j-c) (t) = ∑ R i (1 - e -t/τ i )
Z th(j-c) IGBT
0.001
i
1
2
3
4
IGBT
i =1
Ri(K/kW)
8.78
2.06
0.961
0.948
τi(ms)
207.4
30.1
7.55
1.57
DIODE
Z th(j-c) [K/W] IGBT, DIODE
Z th(j-c) Diode
Ri(K/kW)
17.3
4.28
1.92
1.92
τi(ms)
203.6
30.1
7.53
1.57
5
0.0001
0.001
Fig. 16
0.01
0.1
t [s]
1
10
Thermal impedance vs time
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
abbsem@ch.abb.com
www.abb.com/semiconductors
Doc. No. 5SYA1562-01 July 07