6MBP75TEA060 600V / 75A 6 in one-package Econo IPM series Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection · Higher reliability because of a big decrease in number of parts in built-in control circuit Maximum ratings and characteristics Absolute maximum ratings(at Tc=25°C unless otherwise specified) Item Bus voltage DC Surge Short operating Collector-Emitter voltage *1 Collector current Inverter DC 1ms Duty=75.0% *2 Collector power dissipation One transistor *3 Supply voltage of Pre-Driver *4 Input signal voltage *5 Input signal current Alarm signal voltage *6 Alarm signal current *7 Junction temperature Operating case temperature Storage temperature Solder temperature *8 Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.) Screw torque Mounting (M5) Symbol Rating Min. Max. VDC VDC(surge) V SC VCES IC ICP -IC PC V CC Vin Iin VALM IALM Tj Topr Tstg Tsol Viso 0 0 200 0 -0.5 -0.5 -0.5 -20 -40 - 450 500 400 600 75 150 75 198 20 Vcc+0.5 3 Vcc 20 150 100 125 260 AC2500 3.5 Unit V V V V A A A W V V mA V mA °C °C °C °C V N·m Note *1 : Vces shall be applied to the input voltage between terminal P and U or ‚u or W, N and U or V or W *2 : 125°C/FWD Rth(j-c)/(Ic x VF MAX)=125/0.855/(75 x 2.6) x 100=75.0% *3 : Pc=125°C/IGBT Rth(j-c)=125/0.63=198W [Inverter] *4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13 *5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16,17,18 and 13. *6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13. *7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19. *8 : Immersion time 10±1sec. 6MBP75TEA060 IGBT-IPM Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.) Main circuit Inverter Item Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Turn-on time Turn-off time Reverse recovery time Maximum Avalanche Energy (A non-repetition) Symbol ICES VCE(sat) VF ton toff trr PAV Condition Min. Typ. Max. Unit VCE=600V Vin terminal open. Ic=75A Terminal Chip -Ic=75A Terminal Chip VDC=300V,Tj=125°C 1.2 IC=75A Fig.1, Fig.6 VDC=300V, IC=75A Fig.1, Fig.6 Internal wiring inductance=50nH 40 Main circuit wiring inductace=54nH 2.0 1.6 - 1.0 2.4 2.6 3.6 0.3 - mA V V µs mJ Control circuit Supply current of P-line side pre-driver(one unit) Supply current of N-line side pre-driver Input signal threshold voltage (on/off) Item Symbol Iccp ICCN Vin(th) Input zener voltage Alarm signal hold time VZ tALM Current limit resistor RALM Condition Switching Trequency : 0 to 15kHz Tc=-20 to 125°C Fig.7 ON OFF Rin=20k ohm Tc=-20°C Fig.2 Tc=25°C Fig.2 Tc=125°C Fig.2 Alarm terminal Min. Typ. Max. 18 65 1.00 1.35 1.70 1.25 1.60 1.95 8.0 1.1 2.0 4.0 1425 1500 1575 Unit mA mA V V V ms ms ms ohm Protection Section ( Vcc=15V) Item Over Current Protection Level of Inverter circuit Over Current Protection Delay time SC Protection Delay time IGBT Chip Over Heating Over Heating Protection Hysteresis Under Voltage Protection Level Under Voltage Protection Hysteresis Symbol IOC tDOC tSC TjOH TjH V UV VH Condition Min. 113 150 11.0 0.2 Tj=125°C Tj=125°C Tj=125°C Fig.4 Surface of IGBT chips Typ. 5 20 0.5 Max. - 8 - 12.5 - Thermal characteristics( Tc=25°C) Item Junction to Case thermal resistance *10 Inverter IGBT FWD Case to fin thermal resistance with compound Symbol Rth(j-c) Rth(j-c) Rth(c-f) Min. - Typ. 0.05 Max. 0.63 0.855 Unit °C/W °C/W - °C/W Min. Typ. Max. Unit *10 : (For 1 device, Case is under the device) Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5) Item Common mode rectangular noise Common mode lightning surge Condition Pulse width 1µs, polarity ±,10minuets Judge : no over-current, no miss operating Rise time 1.2µs, Fall time 50µs ±2.0 - - kV ±5.0 - - kV Symbol V DC V CC - Min. 13.5 2.5 Typ. 15.0 - Max. 400 16.5 3.0 Unit V V Nm Symbol Wt Min. - Typ. 270 Max. - Unit g Interval 20s, 10 times Judge : no over-current, no miss operating Recommendable value Item DC Bus Voltage Operating Supply Voltage of Pre-Driver Screw torque (M5) Weight Item Weight Unit A µs µs °C °C V V 6MBP75TEA060 IGBT-IPM Vin(th) Vin On Vin(th) trr 90% 50% Ic 90% 10% toff ton Figure 1. Switching Time Waveform Definitions ) on on Gate On Vge (Inside IPM ) Fault (Inside IPM off off /Vin Gate Off normal alarm /ALM tALM > Max. 1 tALM > t ALM 2ms(typ.) 3 Max. 2 Fault : Over-current,Over-heat or Under-voltage Figure 2. Input/Output Timing Diagram tsc Ic Ic Ic I ALM I ALM I ALM Figure.4 Definition of tsc Vcc PP IPM IPM 20 k DC 15V VccU 20k DC 15V VinU SW1 P IPM DC 15V SW2 Earth GND GND N Ic AC200V V Vcc VinX DC 300V U GNDU 20k + + Vin HCPL 4504 CT L Figure 6. Switching Characteristics Test Circuit + W Icc A 4700p N Cooling Fin Vcc P Noise DC 15V IPM U Vin V P.G +8V fsw W GND N Figure 5. Noise Test Circuit Figure 7. Icc Test Circuit 6MBP75TEA060 IGBT-IPM Block diagram P VccU 4 VinU 3 AL MU 2 Pre- Driver R ALM 1.5k GNDU 1 Vcc V 8 VinV 7 AL MV 6 U Pre- Driver R ALM 1.5k GNDV 5 VccW 12 VinW 11 AL MW 10 Vz V Pre- Driver R ALM 1.5k GNDW Vz Vz 9 Vcc 14 VinX 16 W Pre- Driver Vz GND VinY 13 17 Pre- Driver Vz VinZ Pre-drivers include following functions 1.Amplifier for driver 2.Short circuit protection 3.Under voltage lockout circuit 18 Pre- Driver Vz 4.Over current protection 5.IGBT chip over heating protection B VinDB 15 AL M 19 R ALM 1.5k N MBCFM Outline drawings, mm Mass : 270g 6MBP75TEA060 IGBT-IPM Characteristics Control circuit characteristics (Respresentative) Input signal thresh old voltage vs. P ower sup ply voltag e Power su p p ly cu rrent vs. Switch ing freq u en cy Tc=125°C 2 .5 P-sid e N-sid e 50 40 30 V cc=17V V cc=15V V cc=13V 20 V cc=17V V cc=15V V cc=13V 10 Inpu t sig nal thres hold voltag e : Vin (on),Vin (off) (V) Pow er su p p ly c urre nt : Icc (m A) 60 Tj=25°C Tj= 12 5°C 0 2 } Vin(off) } Vin(on) 1 .5 1 0 .5 0 0 5 10 15 20 12 25 Switch ing frequency : fs w (k Hz) Un d er voltag e vs. Jun ction tem p eratu re 13 14 15 16 17 Power su p p ly voltag e : Vcc (V) 18 Un d er voltag e h ysterisis vs. Jn ction tem p erature 14 1 Un de r volta ge h ys teris is : VH (V) Un d er vo ltag e : VUVT (V) 12 10 8 6 4 2 0 .8 0 .6 0 .4 0 .2 0 20 40 60 80 100 12 0 0 14 0 20 Ju nc tion te m pe ra tu re : Tj (°C) 60 80 100 12 0 140 Ju nc tion te m pe ra tu re : Tj (°C) Over heating characteristics TjOH,TjH vs. Vcc Alarm hold tim e vs. P ower sup ply voltag e 3 200 O ver he atin g protection : TjO H (°C) OH h y ste risis : Tj H (°C) Ala rm hold tim e : tALM (m Se c) 40 2 .5 Tc= 10 0°C 2 Tc=2 5° C 1 .5 1 0 .5 0 TjO H 150 100 50 TjH 0 12 13 14 15 16 17 P ower s up p ly vo ltage : Vcc (V) 18 12 13 14 15 16 17 Power s up p ly voltage : Vcc (V) 18 6MBP75TEA060 IGBT-IPM Main circuit characteristics (Respresentative) Col lector cu rren t vs. Collec tor-Emitter voltag e Tj=25 °C (Term ina l) Co lle ctor cu rren t vs. C ol lec to r-Emitter voltag e Tj=25°C(Ch ip ) 10 0 Collector Cu rre nt : Ic (A) Coll ec to r Cu rre n t : Ic (A) 10 0 V cc=15V 75 Vc c= 17V V cc=13V 50 25 Vc c= 15V 75 Vc c= 17V V c c= 13V 50 25 0 0 0 0 .5 1 1.5 2 2.5 3 0 1.5 2 2.5 3 Col lector cu rren t vs. Collec tor-Emitter voltag e Tj=125°C (Term in al) Col lector cu rren t vs. Collec tor-Emitter voltag e Tj=125°C(Ch ip ) 10 0 Col lec to r Cu rre n t : Ic (A) 10 0 Coll ec to r Cu rre nt : Ic (A) 1 Co llector-Em itter vo lta g e : Vce (V) Collector-Em itter vo lta g e : Vce (V) Vc c= 15V 75 V cc= 17V Vc c= 13V 50 25 0 Vc c= 15V 75 V cc= 17V V c c= 13V 50 25 0 0 0 .5 1 1.5 2 2.5 3 0 Co llector-Em itter vo lta g e : Vce (V) 0 .5 1 1.5 2 2.5 3 Co llector-Em itter vo lta g e : Vce (V) Forward current vs. Forward voltag e (Chip) Forward current vs. Forward voltage (Term inal) 15 0 12 5° C Fo rw ard Cu rren t : If (A) 150 Fo rw ard Curren t : If (A) 0 .5 25°C 100 50 0 125°C 2 5° C 10 0 50 0 0 0.5 1 1.5 Fo rw ard vol ta ge : Vf (V) 2 2 .5 0 0.5 1 1.5 Fo rw ard vol ta ge : Vf (V) 2 2 .5 6MBP75TEA060 IGBT-IPM Switching Loss vs.Collector Current Edc=300V,V cc=15V,Tj=1 25°C 6 5 4 Eo n 3 2 Eo ff 1 E rr Switch in g loss : Eo n,Eo ff,Err (m J/cycle) Switch in g los s : Eo n,Eo ff,Err (m J/cy cl e) Switching Loss vs.Collector Current Edc=30 0V,Vcc=15 V,Tj=25°C 0 6 Eo n 5 4 3 Eo ff 2 1 Err 0 0 20 40 60 80 0 20 40 60 80 Collec tor cu rren t : Ic (A) Collec tor cu rren t : Ic (A) Th ermal res is ta nc e : R th (j-c) (°C /W ) Transient therm al resistance FWD 1 IGB T 0 .1 0.01 0.00 1 0.0 1 0 .1 1 Pu lse width :Pw (sec) Power d eratin g for IG BT (per device) Power derating for FW D (per device) 20 0 Co lle cter P ower D is sip atio n : P c (W ) Co lle cter Power D issip ation : P c (W ) 250 200 150 100 50 0 15 0 10 0 50 0 0 20 40 60 80 100 120 C as e Tem pera tu re : Tc (°C ) 14 0 160 0 20 40 60 80 100 12 0 140 C as e Tem peratu re : Tc (°C ) 16 0 6MBP75TEA060 IGBT-IPM Switching tim e vs. Collector current Edc=30 0V,Vcc=15 V,Tj=25°C Switching tim e vs. Collector current Edc=300 V,V cc=15V,Tj=1 25°C 10 000 S witch in g tim e : ton ,toff,tf (n Sec) Switch in g tim e : ton ,toff,tf (n Sec) 10 000 ton toff 1 000 100 tf 10 to ff 1 000 100 tf 10 20 40 60 80 100 120 Co lle ctor cu rren t : Ic (A) trr125 °C trr2 5 °C 100 Irr125 °C Irr2 5 °C 10 1 20 40 60 80 Fo rw ard cu rren t:IF(A) 100 20 40 60 80 100 Co lle ctor cu rren t : Ic (A) Reverse recovery characteristics trr,Irr vs.IF R eve rse rec overy cu rren t:Irr(A) Reverse re covery time:trr(nsec) ton 120 120