ONSEMI UMA6NT1

UMA4NT1, UMA6NT1
Preferred Devices
Dual Common Emitter Bias
Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
http://onsemi.com
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the UMC2NT1 series, two
BRT devices are housed in the SOT−353 package which is ideal for
low power surface mount applications where board space is at a
premium.
3
R1
Q2
4
5
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Pb−Free Packages are Available
MARKING
DIAGRAM
Ux M G
G
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1
and Q2, − minus sign for Q1 (PNP) omitted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
RqJA
833
°C/W
TJ, Tstg
−65 to +150
°C
PD
*150
mW
Collector Current
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
(Surface Mounted)
Operating and Storage Temperature Range
Total Package Dissipation @ TA = 25°C
(Note 1)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
DEVICE RESISTOR VALUES
Device
UMA4NT1
UMA6NT1
1
R1
Q1
Features
•
•
•
•
2
R1 (K)
R2 (K)
10
47
∞
∞
SC−88A/SOT−353
CASE 419A
STYLE 7
Ux = Device Code
x = 0 or 1
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
UMA4NT1
SOT−353
3000/Tape & Reel
UMA4NT1G
SOT−353
(Pb−Free)
3000/Tape & Reel
UMA6NT1
SOT−353
3000/Tape & Reel
UMA6NT1G
SOT−353
(Pb−Free)
3000/Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 4
1
Publication Order Number:
UMA4NT1/D
UMA4NT1, UMA6NT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
−
−
100
nAdc
Collector-Emitter Cutoff Current
(VCB = 50 V, IB = 0)
ICEO
−
−
500
nAdc
IEBO
−
−
−
−
0.9
0.2
mAdc
Collector-Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector-Emitter Breakdown Voltage
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
hFE
160
160
250
250
−
−
VCE(SAT)
−
−
0.25
Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
VOL
−
−
0.2
Vdc
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH
4.9
−
−
Vdc
R1
7.0
33
10
47
13
61
kW
OFF CHARACTERISTICS
Emitter-Base Cutoff Current
(VEB = 6.0, IC = 5.0 mA)
UMA4NT1
UMA6NT1
ON CHARACTERISTICS
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
UMA4NT1
UMA6NT1
Collector−Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
UMA4NT1
UMA6NT1
PD , POWER DISSIPATION (MILLIWATTS)
Input Resistor
250
200
150
100
50
0
−50
RqJA = 833°C/W
0
50
100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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2
150
UMA4NT1, UMA6NT1
10
1000
IC/IB = 10
25°C
hFE, DC CURRENT GAIN
VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − UMA4NT1
TA = 75°C
1
−25°C
0.1
−25°C
100
25°C
10
VCE = 10 V
1
0.01
0
10
20
30
40
50
60
IC, COLLECTOR CURRENT (mA)
70
1
80
10
100
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
100
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 mA
TA = 25°C
10
8
6
4
2
0
1000
Figure 3. DC Current Gain
12
Cob, CAPACITANCE (pF)
TA = 75°C
0
5
10
15
20
25
30
40
35
VR, REVERSE BIAS VOLTAGE (VOLTS)
10
75°C
25°C
0.1
0.01
45
TA = −25°C
1
VO = 5 V
0
Figure 4. Output Capacitance
1
2
3
4
VIN, INPUT VOLTAGE (VOLTS)
5
6
Figure 5. Output Current versus Input Voltage
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3
UMA4NT1, UMA6NT1
10
1000
IC/IB = 10
25°C
1
hFE, DC CURRENT GAIN
VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − UMA6NT1
−25°C
TA = 75°C
0.1
25°C
−25°C
100
VCE = 10 V
10
0.01
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
1
60
10
IC, COLLECTOR CURRENT (mA)
Figure 6. VCE(sat) versus IC
100
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 mA
TA = 25°C
10
8
6
4
2
0
100
Figure 7. DC Current Gain
12
Cob, CAPACITANCE (pF)
TA = 75°C
0
5
10
15
20
25
30
40
35
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
1
25°C
0.1
0.01
0.001
45
TA = −25°C
VO = 5 V
0
Figure 8. Output Capacitance
1
2
3
4
VIN, INPUT VOLTAGE (VOLTS)
Figure 9. Output Current versus Input Voltage
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4
5
UMA4NT1, UMA6NT1
PACKAGE DIMENSIONS
SC−88A / SOT−353 / SC−70
CASE 419A−02
ISSUE J
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
A
G
5
4
−B−
S
1
2
DIM
A
B
C
D
G
H
J
K
N
S
3
D 5 PL
0.2 (0.008)
B
M
M
N
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.031
0.043
0.004
0.012
0.026 BSC
−−−
0.004
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
−−−
0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
STYLE 7:
PIN 1. BASE
2. EMITTER
3. BASE
4. COLLECTOR
5. COLLECTOR
J
C
K
H
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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Phone: 421 33 790 2910
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Phone: 81−3−5773−3850
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5
ON Semiconductor Website: www.onsemi.com
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For additional information, please contact your local
Sales Representative
UMA4NT1/D