NTD78N03 Power MOSFET 25 V, 78 A, Single N−Channel, DPAK Features • Low RDS(on) • Optimized Gate Charge • Pb−Free Packages are Available http://onsemi.com Applications RDS(on) TYP V(BR)DSS • Desktop VCORE • DC−DC Converters • Low Side Switch ID MAX 4.6 @ 10 V 25 V 78 A 6.5 @ 4.5 V D MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 25 V Gate−to−Source Voltage VGS 20 V ID 14.8 A Continuous Drain Current (Note 1) TA = 25°C Power Dissipation (Note 1) TA = 25°C Continuous Drain Current (Note 2) TA = 25°C PD 2.3 4 W 4 4 TA = 85°C A 11.4 1 2 8.8 PD 1.4 W Continuous Drain Current (RJC) TC = 25°C ID 78 A Power Dissipation (RJC) TC = 25°C Pulsed Drain Current Current Limited by Package TC = 85°C tp = 10 s TA = 25°C Drain to Source dV/dt Operating Junction and Storage Temperature Source Current (Body Diode) 56 PD 64 W IDM 88 A IDmaxPkg 32 A dV/dt 2.0 V/ns TJ, Tstg −55 to 175 °C IS 78 A Single Pulse Drain−to−Source Avalanche Energy (VDD = 24 V, VGS = 10 V, L = 5.0 mH, IL(pk) = 17 A, RG = 25 ) EAS 722.5 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = TBD in sq). Semiconductor Components Industries, LLC, 2005 1 1 3 CASE 369C DPAK (Bend Lead) STYLE 2 1 2 3 CASE 369D DPAK (Straight Lead) STYLE 2 2 3 CASE 369AC 3 IPAK (Straight Lead) MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain YWW 78 N03 Steady y St t State ID TA = 25°C February, 2005 − Rev. 0 S 11.5 YWW 78 N03 Power Dissipation (Note 2) TA = 85°C N−Channel G 1 Gate 2 Drain 3 Source 1 Gate 3 Source 2 Drain Y = Year WW = Work Week 78N03 = Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: NTD78N03/D NTD78N03 THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction−to−Case (Drain) Parameter RJC 1.95 °C/W C/ Junction−to−Ambient − Steady State (Note 3) RJA 65 Junction−to−Ambient − Steady State (Note 4) RJA 110 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 A 25 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V 24 VGS = 0 V, VDS = 20 V mV/°C TJ = 25°C 1.5 TJ = 125°C 10 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 A A 100 nA 3.0 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance 1.0 VGS(TH)/TJ RDS(on) ( ) gFS 1.6 −5.0 mV/°C m VGS = 10 V, ID = 78 A 4.6 6.0 VGS = 4.5 V, ID = 36 A 6.5 7.8 VDS = 10 V, ID = 15 A 22 S 1920 pF CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Ciss VGS = 0 V, V f = 1.0 1 0 MHz, MH VDS = 12 V Output Capacitance Coss Reverse Transfer Capacitance Crss 420 Total Gate Charge QG(TOT) 25.5 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 18.2 td(on) 11 VGS = 4.5 V, VDS = 20 V, ID = 20 A 960 35 nC 2.4 5.3 SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(off) VGS = 4.5 V, VDS = 20 V, ID = 20 A, RG = 3.0 tf ns 68 23 42 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Time 3. 4. 5. 6. VSD VGS = 0 V, IS = 20 A TJ = 25°C 0.83 TJ = 125°C 0.7 tRR ta tb 39 VGS = 0 V, dIs/dt = 100 A/s, IS = 20 A QRR http://onsemi.com 2 V ns 17.8 21 33 Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = TBD in sq). Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%. Switching characteristics are independent of operating junction temperatures. 1.0 nC NTD78N03 100 VGS = 4 V 80 3.8 V 4.5 V 5V 3.6 V 9V 3.4 V 70 60 50 3.2 V 40 30 3V 20 TJ = 25°C 10 2.6 V 0 2 0 4 6 8 10 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0.01 VGS = 10 V 0.008 TJ = 125°C 0.007 0.006 TJ = 25°C 0.005 0.004 0.003 TJ = −55°C 0.002 20 30 40 50 60 70 80 TJ = 25°C 0.01 VGS = 4.5 V VGS = 10 V 0.005 0 55 60 65 70 75 80 ID, DRAIN CURRENT (A) Figure 3. On−Resistance versus Drain Current and Temperature Figure 4. On−Resistance versus Drain Current and Gate Voltage 3 2.5 0.015 ID, DRAIN CURRENT (A) 100000 VGS = 0 V ID = 78 A VDS = 4.5 V 10000 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 0.001 6 5 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.009 0 10 160 150 VDS ≥ 10 V 140 130 120 110 100 90 80 70 60 50 TJ = 125°C 40 30 TJ = 25°C 20 TJ = −55°C 10 0 0 3 1 2 4 VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (Ω) RDS(on), DRAIN−TO−SOURCE RESISTANCE (Ω) ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 90 2 1.5 1 TJ = 150°C TJ = 125°C 1000 100 0.5 0 −50 −25 0 25 50 75 100 125 150 175 10 5 10 15 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−To−Source Leakage Current versus Voltage http://onsemi.com 3 25 VDS = 0 V VGS = 0 V TJ = 25°C C, CAPACITANCE (pF) 5000 Ciss 4000 Crss 3000 2000 Ciss 1000 Coss 0 10 Crss 5 VGS 0 VDS 5 10 15 20 25 8 VDS 15 6 VGS 4 5 2 ID = 20 A TJ = 25°C 0 0 5 10 15 20 25 30 0 35 Qg, TOTAL GATE CHARGE (nC) Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge Figure 7. Capacitance Variation 80 1000 100 IS, SOURCE CURRENT (AMPS) VDS = 20 V ID = 20 A VGS = 4.5 V t, TIME (ns) 10 Q2 Q1 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) tr tf td(off) td(on) 10 1 10 RG, GATE RESISTANCE (OHMS) 100 Figure 9. Resistive Switching Time Variation versus Gate Resistance EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) 10 s 100 100 s 1 ms VGS = 20 V SINGLE PULSE TC = 25°C 1 10 ms dc RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 0.1 60 50 40 30 20 10 0.6 0.7 0.8 0.9 1.1 1.0 VSD, SOURCE−TO−DRAIN VOLTAGE (V) 1.2 Figure 10. Diode Forward Voltage versus Current 1000 10 VGS = 0 V 70 T = 25°C J 0 0.5 1 I D, DRAIN CURRENT (AMPS) 20 QT VDS, DRAIN−TO−SOURCE VOLTAGE (V) 6000 VGS, GATE−TO−SOURCE VOLTAGE (V) NTD78N03 800 ID = 78 A 700 600 500 400 300 200 100 0 25 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature 1 10 100 http://onsemi.com 4 175 NTD78N03 di/dt IS trr ta tb TIME 0.25 IS tp IS Figure 13. Diode Reverse Recovery Waveform Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE 1000 MOUNTED TO MINIMUM RECOMMENDED FOOTPRINT DUTY CYCLE 100 D = 0.5 0.2 0.1 0.05 0.02 0.01 10 1 P(pk) t1 0.1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE RθJA(t) = r(t) RθJA D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TA = P(pk) RθJA(t) 0.01 1E−05 1E−04 1E−03 1E−02 1E−01 t, TIME (seconds) 1E+00 1E+01 1E+02 1E+03 Figure 14. Thermal Response − Various Duty Cycles ORDERING INFORMATION Package Shipping† NTD78N03 DPAK 75 Units/Rail NTD78N03T4 DPAK 2500 Tape & Reel DPAK (Pb−Free) 2500 Tape & Reel NTD78N03−1 DPAK Straight Lead 75 Units/Rail NTD78N03−1G DPAK Straight Lead (Pb−Free) 75 Units/Rail NTD78N03−35 DPAK−3 Straight Lead (3.5 0.15 mm) 75 Units/Rail NTD78N03−35G DPAK−3 Straight Lead (3.5 0.15 mm) (Pb−Free) 75 Units/Rail Order Number NTD78N03T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NTD78N03 PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE −T− E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D G 2 PL 0.13 (0.005) M T SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− NTD78N03 PACKAGE DIMENSIONS DPAK CASE 369D−01 ISSUE B B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F H D G M INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 3 PL 0.13 (0.005) DIM A B C D E F G H J K R S V Z T http://onsemi.com 7 MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− NTD78N03 PACKAGE DIMENSIONS 3 IPAK, STRAIGHT LEAD CASE 369AC−01 ISSUE O B V C E R DIM A B C D E F G H J K R V W A SEATING PLANE K W F J G H D NOTES: 1.. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.. CONTROLLING DIMENSION: INCH. 3. SEATING PLANE IS ON TOP OF DAMBAR POSITION. 4. DIMENSION A DOES NOT INCLUDE DAMBAR POSITION OR MOLD GATE. 3 PL 0.13 (0.005) W INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.043 0.090 BSC 0.034 0.040 0.018 0.023 0.134 0.142 0.180 0.215 0.035 0.050 0.000 0.010 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.09 2.29 BSC 0.87 1.01 0.46 0.58 3.40 3.60 4.57 5.46 0.89 1.27 0.000 0.25 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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