ZARLINK ZL70009

ZL70002/08/09/10
Medical Surge Protection Devices
Data Sheet
Features
•
•
•
•
•
July 2003
Extremely fast turn-on
Very small size and very low leakage
5, 6 and 7 terminals available
Standard delivery form: solder bumped die
Facilitates compliance with EN-45502 and EN50061
Ordering Information
ZL70002/UDJ Bumped Die, Waffle
ZL70008/UDJ Bumped Die, Waffle
ZL70009/UDJ Bumped Die, Waffle
ZL70010/UDJ Bumped Die, Waffle
0 to +55°C
Tray
Tray
Tray
Tray
Description
Superior Quality
•
•
•
The ZL70002/08/09/10 family are high performance
surge protection devices targeted for medical
applications.
QA procedures based on MIL-PRF-38535
Traceability for every chip to lot and wafer
number
100% burn-in capability
Applications
•
•
Pacemakers, Implantable Cardioverter
Defibrillators (ICDs), Neurostimulators, Bladder
Control Devices
Medical devices with electronics requiring
protection against a high voltage surge
Rb
T1
Rb
Rb
Rb
T2
T3
Rb
T4
Figure 1 - ZL70010 Block Diagram
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Zarlink Semiconductor Inc.
Rb
T5
T6
ZL70002/08/09/10
Rb
Rb
Rb
Rb
T1
Data Sheet
T4
T3
T2
Rb
Rb
T5
Rb
T7
T6
Figure 2 - ZL70002 Block Diagram
Pin Description Table - ZL70010 and ZL70002
Pin #
In/Output
Name
Description
1
I
T1
Transient Surge Protection Terminal 1
2
I
T2
Transient Surge Protection Terminal 2
3
I
T3
Transient Surge Protection Terminal 3
4
I
T4
Transient Surge Protection Terminal 4
5
I
T5
Transient Surge Protection Terminal 5
6
I
T6
Transient Surge Protection Terminal 6
7
I
T7
Transient Surge Protection Terminal 7 (ZL70002 only)
ZL70010
T1
T2
T3
T4
ZL70002
T5
T6
T1
T2
T3
T4
T5
Figure 3 - ZL70010 and ZL70002 Bumped Chip Appearance
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Zarlink Semiconductor Inc.
T6
T7
ZL70002/08/09/10
Data Sheet
Rb
Rb
Rb
T2
T1
T3
SUB1
Rb
Rb
SUB2
T5
T4
Figure 4 - ZL0008/ZL0009 Block Diagram
Pin Description Table - ZL0008 and ZL0009
Pin #
In/Output
Name
Description
1
I
T1
Transient Surge Protection Terminal 1
2
I
T2
Transient Surge Protection Terminal 2
3
I/O
SUB1
Transient Surge Protection Substrate Connection 1
4
I
T3
Transient Surge Protection Terminal 3 Doubled Area
5
I/O
SUB2
Transient Surge Protection Substrate Connection 2
6
I
T4
Transient Surge Protection Terminal 4
7
I
T5
Transient Surge Protection Terminal 5
ZL70008
T1
T2
SUB1
T3
SUB2
ZL70009
T4
T5
T1
T2
SUB1
T3
SUB2
Figure 5 - ZL70008 and ZL70009 Bumped Chip Appearance
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Zarlink Semiconductor Inc.
T4
T5
ZL70002/08/09/10
1.0
Data Sheet
Functional Description
The ZL70002/08/09/10 is a family of transient surge suppressing devices designed specifically for implanted medical
devices. The device terminals have an extremely low leakage during normal voltages and can therefore be
connected in parallel with the pins of the device it protects. When the voltage rises to dangerous level it then rapidly
turns on and limits the voltage by shunting the current through its thyristors. This makes the ZL70002/08/09/10
family an effective means of compliance with international regulations EN-45502, “Active implantable” and the EN50061 “Safety of Implantable Cardiac Pacemakers”.
1.1
ZL70010
ZL70010 is a six-branch device.The suppression is achieved by a self-triggering thyristor-diode device in parallel
with a diode between each branch-input and a common node which also is the substrate of the device. The six
branches of the device are reached through terminals T1, T2, T3, T4, T5 and T6. The electrical characteristic
observed between any two of the terminals (T1, T2, T3, T4, T5 and T6) very much resembles that of a DIAC, see
Figure 12.
When a transient current is forced between two branch-input terminals, the positive terminal will be clamped to the
common node by the diode of one branch and the negative terminal to the forward voltage of the thyristor-diode of
the other branch. Due to the low on-state voltage of the thyristor that voltage will stay at a safe value during the
transient.
1.2
ZL70002
ZL70002 is a seven-branch device with exactly the same electrical characteristics as ZL70010.
1.3
ZL70008 and ZL70009
ZL70008 and ZL70009 are five-branch transient surge suppressing with the same functionality as ZL70010. The
only functional difference is that the substrate of the device is accessible through the two terminals SUB1 and SUB2.
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Zarlink Semiconductor Inc.
ZL70002/08/09/10
Data Sheet
2.0
Application
According to the EN-45502 standard, all active medical devices intended for implantation in a human torso should
not be permanently affected by an external defibrillation of the patient. Compliance is confirmed if the implanted
device continues to meet device specification after being subjected to a sequence of 140 Volt pulses in series with
a 300 Ohm resistor between each conductive part of the device including the device case (see EN-45502 for
details). Using the ZL70002/08/09/10 protects the implantable device and is an effective means of compliance with
the EN-45502 standard where the electronics, in almost all cases, would be destroyed if not protected. The same
compliance tests are also described in EN-50061.
In the application example shown in Figure 6, each of the dual chamber pacemaker's terminals and case are
connected to a terminal on the protection device. If a defibrillation pulse causes the ventricular tip to begin to go
positive, relative to the case, the ZL70008/9 thyristor structure rapidly becomes active and forms a low impedance
path between T2 and T3 to absorb the current and limit the voltage. This provides an effective means of protection
to the pacemaker chip. In actuality, the voltages and currents the implanted device is subjected to in an actual
defibrillation can be higher than described in EN-45502/EN-50061 and has been taken into account when designing
the ZL70002/08/09/10 family.
Surge Protection Device
ZL70008/09
T1
T2
T3
T4
Typical Dual Chamber Pacemaker
T5
Analog chip
Atrial tip lead
Digital
chip
Charge
Pump
Atrial ring lead
Stimulation
and
Sensing
block
Case
Ventricular tip lead
Voltage
and
Current
Reference
Ventricular ring lead
Figure 6 - Pacemaker Application Example
Terminals placed most remotely to others should get special attention since they effectively form a large pick-up
coil and could therefore be exposed to a large amount of current. When implanted, the pacemaker case is placed
beneath the collarbone and all other terminals are placed together inside the heart. For this reason, the largest
current will pass through the surge protection terminal connected to the case of the pacemaker. For ZL70008/9, we
recommend that the case be connected to T3 of the protection device which is designed to be able to withstand the
largest amount of current. If device ZL700010 is used in a 5 terminal application, we recommend that 2 pins of the
protection device be connected to the implantable device terminal with the largest current flow (typically the terminal
for the device case).
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Zarlink Semiconductor Inc.
ZL70002/08/09/10
Mechanical Data - ZL70010
528 + 18 um
2.1
Data Sheet
185 + 5 um
650 + 5 um
300 + 25 um
270 + 25 um
4064 + 20 um
1840 + 20 um
1290 + 5 um
108 + 5 um
Figure 7 - Size and Bump Placement of ZL70010
528 + 18 um
Mechanical Data - ZL70002
185 + 5 um
650 + 5 um
300 + 25 um
270 + 25 um
4700 + 20 um
1290 + 5 um
1850 + 20 um
2.2
108 + 5 um
Figure 8 - Size and Bump Placement of ZL70002
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Zarlink Semiconductor Inc.
ZL70002/08/09/10
Data Sheet
2.3
Mechanical Data - ZL70008 and ZL70009
Note that the bump pattern for ZL70008 and ZL70009 differ slightly as shown in Figure 5. Figure 9 depicts ZL70008.
186 + 5 um
342 + 5 um
516 + 5 um
559 + 5 um
372 + 35 um
235 + 35 um
4454 + 20 um
95 + 25/-20 um
o 125 + 22 um
Barrier layers
Si3N4
AL
o 66 um
o 92 um
Figure 10 - Bump Appearance of ZL70002/08/09/10
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Zarlink Semiconductor Inc.
108 + 5 um
Sn/Pb 63/37
1290 + 5 um
2285 + 5 um
Figure 9 - Size and Bump Placement of ZL70008 and ZL70009
ZL70002/08/09/10
Data Sheet
Absolute Maximum Ratings*
Parameter
Sym
Min
Max
Units
125
°C
1
Storage Temperature range
TS
2
Maximum junction
temperature
Tj
125
°C
3
Maximum surge current
ITSM
8
A
4
Continuous power dissipation
Pmax
300
mW
-40
Test Conditions
Test according to Figure 11.
tp for flip mounted chips with underfill:
10 ms
t>1 s
*Exceeding these values may cause permanent damage. Functional operations under these conditions is not implemented
Recommended Operating Conditions
5
Parameter
Sym
Min
Typ1
Max
Units
Operating temperature
range
TOP
0
37
55
°C
Test Conditions
1) Typical figures are at 37 degrees C and are for design only.
DC Electrical Characteristics1
Sym
Min
Typ2
Max
Units
ZL70002/10
Vfz
9.0
10.1
11.0
V
Iz=10µA
ZL70008
Vfz
9.5
10.5
13.5
V
Iz=10µA
ZL70009
Vfz
9.0
9.5
12.2
V
Iz=10µA
ZL70008
Vfz
9.0
10.2
12.8
V
Iz=10µA
ZL70009
Vfz
8.5
9.2
11.5
V
Iz=10µA
ZL70002/10
Vbo
9.0
11.2
12.2
V
Figure 12
ZL70008
Vbo
9.5
11.6
13.5
V
Figure 12
ZL70009
Vbo
9.0
10.5
12.2
V
Figure 12
ZL70008
Vbo
9.0
11.0
12.8
V
Figure 12
ZL70009
Vbo
8.5
9.8
11.5
V
Figure 12
Parameter
6
7
8
9
Test Conditions
Forward breakdown
voltage, Zener diode,
terminal to terminal
Forward breakdown
voltage, Zener diode,
terminal to substrate
Breakover voltage,
terminal to terminal
Breakover voltage,
terminal to substrate
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Zarlink Semiconductor Inc.
ZL70002/08/09/10
Data Sheet
Parameter
10
12
Measured @2A
Figure 12
ZL70008
Ibo
28
60
mA
Figure 12
ZL70009
Ibo
15
40
mA
Figure 12
mA
Measured after a current pulse
of Ip=0.2A for tp=1ms,
RG<200 Ω
Figure 13.
Holding current
Ih
1
On-state voltage
terminal to terminal
Von
2.2
3.0
V
Measured with a 300 µs pulse,
IT=1 A
Ron
0.4
1
Ω
Measured with a 300 µs pulse,
dIT=1-2 A
Von
1.0
3.0
V
Measured with a 300 µs pulse,
IT=1 A
Id
10
100
nA
Measured at 8.5 V
(ZL70002/09/10) and at 9.0 V
(ZL70008)
Id
10
100
nA
Measured at 8.5 V (ZL70008)
and at 8.0 V (ZL70009)
Cp
50
pF
Cp
200
pF
On-state dynamic
resistance
On-state voltage
terminal to substrate
Off-state current
terminal to terminal
Off-state current
terminal to substrate
Parasitic capacitance
ZL70002/10
19
V
mA
ZL70008/09
18
Vfwd
60
ZL70002/08/09/10
17
2
Test Conditions
15
ZL70008/09
16
Units
Ibo
ZL70002/08/09/10
15
Max
ZL70002/10
ZL70002/08/09/10
14
Typ2
Breakover current
ZL70002/08/09/10
13
Min
Forward diode voltage
drop, substrate to
terminal
ZL70008/09
11
Sym
Parasitic capacitance
ZL70008/09
1) Electrical Characteristics are over Recommended Operating Conditions unless otherwise stated.
2) Typical figures are at 37 degrees C and are for design only
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Zarlink Semiconductor Inc.
ZL70002/08/09/10
Data Sheet
AC Electrical Characteristics1
Parameter
20
21
Sym
Min
Typ2
Max
Units
Test Conditions
Measured at 8.0 V (ZL70002/09/10)
and at 8.5 V (ZL70008)
and defined according to Figure 14.
Turn-on delay
ZL70002/10
t ond
500
700
ns
ZL70008
t ond
140
200
ns
ZL70009
t ond
60
100
ns
ZL70002/08/10
Vpeak
13
15
V
Measured at peak and defined
according to Figure 14.
ZL70009
Vpeak
11
13
V
Measured at peak and defined
according to Figure 14.
Maximum voltage
during surge
1) Electrical Characteristics are over Recommended Operating Conditions unless otherwise stated.
2) Typical figures are at 37 degrees C and are for design only.
I
Slewrate= 4 A/µs
ITSM
0.9xITSM
0.1xITSM
t
tp
Figure 11 - 10 ms Surge Current Waveform
I
IT
Ibo
Ih
Id
Ifz
U
Von
Vd Vfz
Vbo
Figure 12 - Terminal to Terminal Characteristic
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Zarlink Semiconductor Inc.
ZL70002/08/09/10
Data Sheet
Rg
DUT
Ip
+ Vg
Figure 13 - Holding Current Circuit
1V
VT
Vpeak
Ip= 4 A
Vfzmin
dI/dt = 4A/us
t ond
Figure 14 - Turn-on Delay Definition
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Zarlink Semiconductor Inc.
t
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