ZETEX ZLLS1000

ZLLS1000
40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE
SUMMARY
Schottky Diode VR = 40V; IF = 1.16A; IR = 20 A
DESCRIPTION
This compact SOT23 packaged Schottky diode offers users an excellent performance
combination comprising high current operation, extremely low leakage and low
forward voltage ensuring suitability for applications requiring efficient operation at
higher temperatures (above 85⬚C) see Operational Efficiency chart on page 4.
Key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area savings
FEATURES
• Low equivalent on resistance
• Extremely low leakage (20␮A @30V)
• High current capability (IF = 1.16A)
• Low VF, fast switching Schottky
• SOT23 package
• ZLLS1000 complements low temperature equivalent ZHCS1000
• Package thermally rated to 150⬚C
APPLICATIONS
• DC - DC converters
• Strobes
• Mobile phones
• Charging circuits
• Motor control
ORDERING INFORMATION
DEVICE
REEL
TAPE WIDTH
(inches) (mm)
QUANTITY
PER REEL
ZLLS1000TA
7
8mm embossed
3000 units
ZLLS1000TC
13
8mm embossed
10000 units
DEVICE MARKING
Top view
L10
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SEMICONDUCTORS
ZLLS1000
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
Schottky diode
Continuous reverse voltage
VR
40
V
Forward current
IF
1.16
A
Peak repetitive forward current
I FPK
1.88
A
I FSM
22
A
6.4
A
625
mW
840
mW
Rectangular pulse duty cycle
Non repetitive forward current
t=ⱕ100␮s
t=ⱕ10ms
Package
Power dissipation at T amb =25⬚C
single die continuous
PD
single die measured at t<5 secs
Storage temperature range
T stg
-55 to +150
⬚C
Junction temperature
Tj
150
⬚C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient (a)
R ⍜JA
200
°C/W
Junction to ambient (b)
R ⍜JA
149
°C/W
Notes
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t<5secs.
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SEMICONDUCTORS
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ZLLS1000
TYPICAL CHARACTERISTICS
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SEMICONDUCTORS
ZLLS1000
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
SCHOTTKY DIODE CHARACTERISTICS
PARAMETER
SYMBOL
Reverse breakdown voltage V (BR)R
Forward voltage
VF
MIN.
TYP.
MAX.
40
UNIT
CONDITIONS
V
I R =500µA
280
310
mV
I F =50 mA*
310
340
mV
I F =100 mA*
355
390
mV
I F =250mA*
405
460
mV
I F =500mA*
450
510
mV
I F =750mA*
490
560
mV
I F =1A*
570
660
mV
I F =1.5A*
mV
I F =1000mA*,Ta = 100⬚C
475
␮A
V R =30V
750
␮A
V R =30V,Ta = 85⬚C
CD
26
pF
f=1MHz,VR=30V
Reverse recovery time
t rr
4
ns
Reverse recovery charge
Q rr
335
nC
Switched from
IF = 500mA to VR = 5.5V
Measured @ IR 50mA.
di /d t = 500mA/ ns.
Rsource = 6⍀;Rload= 10⍀
Reverse current
Diode capacitance
IR
11
20
*Measured under pulsed conditions. Pulse width = 300µS. Duty Cycle 艋 2%.
Operational Efficiency chart
The operational efficiency chart indicates the beneficial use of the ZLLS Series diodes in applications requiring
higher voltage, higher temperature operation. Circuits requiring Low voltage Low temperature operation will
benefit from
using Zetex
low VF ZHCS
Series diodes.
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SEMICONDUCTORS
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ZLLS1000
TYPICAL CHARACTERISTICS
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SEMICONDUCTORS
ZLLS1000
Package Outline
Pad Layout
Package Dimensions
Millimeters
Inches
DIM
Min.
Max.
Min.
Max.
A
2.67
3.05
0.105
0.120
B
1.20
1.40
0.047
0.055
C
–
1.10
–
0.043
D
0.37
0.53
0.0145
0.021
F
0.085
0.15
0.0033
0.0059
G
NOM 1.9
NOM 0.075
K
0.01
0.10
0.0004
0.004
L
2.10
2.50
0.0825
0.0985
© Zetex Semiconductors plc 2006
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reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
ISSUE 3 - MAY 2006
SEMICONDUCTORS
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