Bulletin I2402 rev. A 07/00 25RIA SERIES MEDIUM POWER THYRISTORS Stud Version Features 25A Improved glass passivation for high reliability and exceptional stability at high temperature High di/dt and dv/dt capabilities Standard package Low thermal resistance Metric threads version available Types up to 1600V V DRM / V RRM Typical Applications Medium power switching Phase control applications Can be supplied to meet stringent military, aerospace and other high-reliability requirements Major Ratings and Characteristics Parameters IT(AV) @ TC IT(RMS) ITSM 2 I t 25RIA 140 to 160 Units 25 25 A 85 85 °C 40 40 A @ 50Hz 420 398 A @ 60Hz 440 415 A @ 50Hz 867 795 A2 s @ 60Hz 790 725 A2 s VDRM/VRRM tq 10 to 120 100 to 1200 typical TJ www.irf.com 1400 to 1600 V 110 µs - 65 to 125 °C Case Style TO-208AA (TO-48) 1 25RIA Series Bulletin I2402 rev. A 07/00 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage V DRM /V RRM , max. repetitive VRSM , maximum non- I DRM /I RRM max. Code peak and off-state voltage (1) V repetitive peak voltage (2) V @ TJ = TJ max. 10 100 150 20 20 200 300 25RIA 40 400 500 60 600 700 80 800 900 100 1000 1100 120 1200 1300 140 1400 1500 160 1600 1700 mA 10 (1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/µs (2) For voltage pulses with tp ≤ 5ms On-state Conduction Parameter IT(AV) 25RIA 10 to 120 140 to 160 Units Max. average on-state current 25 25 A @ Case temperature 85 85 °C Conditions 180° sinusoidal conduction IT(RMS) Max. RMS on-state current 40 40 A ITSM Max. peak, one-cycle 420 398 A t = 10ms No voltage non-repetitive surge current 440 415 t = 8.3ms reapplied 350 335 t = 10ms 100% VRRM 370 350 t = 8.3ms reapplied Sinusoidal half wave, 867 795 t = 10ms No voltage Initial TJ = TJ max. 790 725 t = 8.3ms reapplied 615 560 t = 10ms 100% VRRM t = 8.3ms reapplied I2t I2√t Maximum I2t for fusing Maximum I2√t for fusing VT(TO)1 Low level value of threshold A2s 560 510 8670 7950 A2√s 0.99 0.99 V 1.40 1.15 10.1 11.73 5.7 10.05 1.70 --- t = 0.1 to 10ms, no voltage reapplied, TJ = TJ max. (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. voltage VT(TO)2 High level value of threshold (I > π x IT(AV)),TJ = TJ max. voltage rt1 Low level value of on-state mΩ (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. slope resistance rt2 High level value of on-state (I > π x IT(AV)),TJ = TJ max. slope resistance VTM Max. on-state voltage IH Maximum holding current 130 IL Latching current 200 --- 2 V Ipk= 79 A, TJ = 25°C 1.80 mA TJ = 25°C. Anode supply 6V, resistive load, www.irf.com 25RIA Series Bulletin I2402 rev. A 07/00 Switching Parameter di/dt 25RIA Units Max. rate of rise of turned-on current VDRM ≤ 600V 200 VDRM ≤ 800V 180 VDRM ≤ 1000V 160 VDRM ≤ 1600V 150 tgt Typical turn-on time trr Typical reverse recovery time tq Typical turn-off time Conditions TJ = TJ max., VDM = rated VDRM A/µs Gate pulse = 20V, 15Ω, tp = 6µs, tr = 0.1µs max. ITM = (2x rated di/dt) A 0.9 TJ = 25°C, at = rated VDRM/VRRM, TJ = 125°C 4 µs TJ = TJ max., ITM = IT(AV), tp > 200µs, di/dt = -10A/µs 110 TJ = TJ max., ITM = IT(AV), tp > 200µs, VR = 100V, di/dt = -10A/µs, dv/dt = 20V/µs linear to 67% VDRM, gate bias 0V-100W (*) tq = 10µsup to 600V, tq = 30µs up to 1600V available on special request. Blocking Parameter dv/dt Max. critical rate of rise of off-state voltage 25RIA 100 300 (*) Units V/µs Conditions TJ = TJ max. linear to 100% rated VDRM TJ = TJ max. linear to 67% rated VDRM (**) Available with: dv/dt = 1000V/µs, to complete code add S90 i.e. 25RIA160S90. Triggering Parameter PGM Maximum peak gate power 25RIA Units Conditions 8.0 W TJ = TJ max. PG(AV) Maximum average gate power 2.0 IGM Max. peak positive gate current 1.5 A TJ = TJ max. -VGM Maximum peak negative 10 V TJ = TJ max. gate voltage IGT DC gate current required 90 to trigger 60 TJ = - 65°C mA TJ = 125°C 35 VGT TJ = 25°C DC gate voltage required 3.0 to trigger 2.0 V 1.0 V Max. required gate trigger current/ voltage are the lowest value which will trigger all units 6V anode-tocathode applied TJ = - 65°C IGD DC gate current not to trigger 2.0 mA VGD DC gate voltage not to trigger 0.2 V TJ = 25°C TJ = 125°C TJ = TJ max., VDRM = rated value TJ = TJ max. VDRM = rated value www.irf.com Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied 3 25RIA Series Bulletin I2402 rev. A 07/00 Thermal and Mechanical Specification 25RIA Units TJ Parameter Max. operating temperature range - 65 to 125 °C Tstg Max. storage temperature range - 65 to 125 °C 0.75 K/W DC operation 0.35 K/W Mounting surface, smooth, flat and greased R thJC Max. thermal resistance, Conditions junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque wt to nut to device 20(27.5) 25 lbf-in Lubricated threads 0.23(0.32) 0.29 kgf.m (Non-lubricated threads) 2.3(3.1) 2.8 Nm Approximate weight 14 (0.49) Case style TO-208AA (TO-48) g (oz) See Outline Table ∆RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units 180° 0.17 0.13 120° 0.21 0.22 90° 0.27 0.30 60° 0.40 0.42 30° 0.69 0.70 K/W Conditions TJ = TJ max. Ordering Information Table Device Code 25 RIA 160 2 1 S90 4 5 1 - Current code 2 - Essential part number 3 - Voltage code: Code x 10 = VRRM (See Voltage Rating Table) 4 - None = Stud base TO-208AA (TO-48) 1/4" 28UNF-2A M 5 - = Stud base TO-208AA (TO-48) M6 X 1 Critical dv/dt: None = 300V/µs (Standard value) S90 4 3 M = 1000V/µs (Special selection) www.irf.com 25RIA Series Bulletin I2402 rev. A 07/00 Outline Table Case Style TO-208AA (TO-48) 130 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) All dimensions in millimeters (inches) 25RIA Series (100 to 1200V) RthJC (DC) = 0.75 K/W 120 110 Conduction Angle 30° 100 60° 90° 120° 180° 90 80 0 5 10 15 20 25 30 130 25RIA Series (100 to 1200V) R thJC (DC) = 0.75 K/W 120 110 Conduction Period 30° 100 60° 90° 90 120° 180° DC 80 0 10 20 30 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristic Fig. 2 - Current Ratings Characteristic www.irf.com 40 5 25RIA Series 45 25 3K /W 4K /W 5K /W RMS Limit 20 15 Conduction Angle 10 25RIA Series (100 to 1200V) TJ = 125°C 5 0 0 K/ W 5 aR elt -D 30 2 W K/ 35 =1 180° 120° 90° 60° 30° 40 SA R th Maximum Average On-state Power Loss (W) Bulletin I2402 rev. A 07/00 10 15 20 25 Average On-state Current (A) 7K /W 0 30 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) 60 DC 180° 120° 90° 60° 30° 55 W K/ 2K /W R 30 25 RMS Limit 20 Conduction Period 15 25RIA Series (100 to 1200V) TJ = 125°C 10 5 0 ta el -D 35 1 40 = 45 SA th 50 R Maximum Average On-state Power Loss (W) Fig. 3 - On-state Power Loss Characteristics 0 5 10 15 20 25 30 35 Average On-state Current (A) 3K /W 4K /W 5K /W 7 K/W 0 40 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 4 - On-state Power Loss Characteristics At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 350 325 300 275 250 225 25RIA Series (100 to 1200V) 200 175 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 6 450 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 375 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C No Voltage Reapplied RatedRRM V Reapplied 425 400 375 350 325 300 275 250 225 200 175 25RIA Series (100 to 1200V) 150 0.01 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current www.irf.com 25RIA Series Bulletin I2402 rev. A 07/00 Instantaneous On-state Current (A) 1000 25RIA Series (100 to 1200V) 100 10 TJ = 25°C TJ = 125°C 1 0.5 1 1.5 2 2.5 Instantaneous On-state Voltage (V) Maximum Allowable Case Temperature (°C) 130 25RIA Series (1400 to 1600V) R thJC (DC) = 0.75 K/W 120 110 Conduction Angle 100 30° 60° 90° 90 80 0 5 10 15 120° 20 180° 25 30 130 25RIA Series (1400 to 1600V) R thJC (DC) = 0.75 K/W 120 110 Conduction Period 100 90 90° 60° 120° 80 30° 70 0 5 180° DC 10 15 20 25 30 35 40 45 Average On-state Current (A) Average On-state Current (A) Fig. 8 - Current Ratings Characteristics Fig. 9 - Current Ratings Characteristics 45 25RIA Series (1400 to 1600V) TJ = 125°C 5 0 0 5 10 15 20 25 Average On-state Current (A) aR elt -D 10 K/W .5 =0 RMS Limit Conduction Angle SA R th K/ W 3K /W 3.5 K/ W 4.5 K/W 6 K/ W 20 15 W K/ 25 2.5 W K/ 30 2 35 /W 1K 180° 120° 90° 60° 30° 40 5 1. Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) Fig. 7 - Forward Voltage Drop Characteristics 7.5 K /W 0 30 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 10 - On-state Power Loss Characteristics www.irf.com 7 25RIA Series 60 25RIA Series (1400 to 1600V) TJ = 125°C 10 0 0 5 10 15 20 25 30 35 40 0 aR elt -D Conduction Period K/ W 2K /W 2.5 K/W 3K /W 4K /W 5.5 K/W 7.5 K /W W K/ 20 .5 =0 30 RMS Limit A hS 40 1. 5 W K/ 50 Rt DC 180° 120° 90° 60° 30° 1 Maximum Average On-state Power Loss (W) Bulletin I2402 rev. A 07/00 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Average On-state Current (A) Fig. 11 - On-state Power Loss Characteristics 400 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 350 325 300 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 375 275 250 225 200 25RIA Series (1400 to 1600V) 175 150 1 10 100 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ= 125°C No Voltage Reapplied Rated VRRMReapplied 375 350 325 300 275 250 225 200 175 25RIA Series (1400 to 1600V) 150 0.01 0.1 Number Of Equal Amplitude Half Cycle Current Pulses (N) 1 Pulse Train Duration (s) Fig. 13 - Maximum Non-Repetitive Surge Current Fig. 12 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 1000 100 TJ= 25°C TJ = 125°C 10 25RIA Series (1400 to 1600V) 1 0 1 2 3 4 5 6 Instantaneous On-state Voltage (V) Fig. 14 - Forward Voltage Drop Characteristics 8 www.irf.com 25RIA Series Transient Thermal Impedance Z thJC (K/W) Bulletin I2402 rev. A 07/00 1 Steady State Value R thJC = 0.75 K/W (DC Operation) 0.1 25RIA Series 0.01 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 15 - Thermal Impedance Z thJC Characteristics 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt : 10V, 20ohms tr <=0.5 µs, tp >= 6 µs b) Recommended load line for <=30% rated di/dt : 10V, 65ohms 10 tr<=1 µs, tp >= 6 µs (1) PGM = 16W, (2) PGM = 30W, (3) PGM = 60W, (4) PGM = 60W, tp = 4ms tp = 2ms tp = 1ms tp = 1ms (a) (b) 0.1 0.001 Tj = -65 °C Tj = 125 °C VGD Tj = 25 °C 1 (1) IGD (2) (3) (4) 25RIA Series Frequency Limited by PG(AV) 0.01 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 16 - Gate Characteristics WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332. EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408. IR CANADA: 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801. IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933. IR ITALY: Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220. IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086. IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630. IR TAIWAN: 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936. http://www.irf.com www.irf.com Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice. 9