32.0-46.0 GHz GaAs MMIC Balanced Mixer November 2005 - Rev 21-Nov-05 M1000 Features Chip Device Layout Fundamental Balanced Mixer 7.0 dB Conversion Loss +24 dBm Input Third Order Intercept 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband’s 32.0-46.0 GHz GaAs MMIC fundamental balanced mixer has been optimized for use as a down-converter. The device has a conversion loss of 7.0 dB with a +24.0 dBm input third order intercept point. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Absolute Maximum Ratings Gate Bias Voltage (Vg) Input Power (RF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) +0.3 VDC +20.0 dBm -65 to +165 OC -55 to +125 OC Electrical Characteristics (Ambient Temperature T = 25o C) Parameter Frequency Range (RF) Upper Sideband Frequency Range (RF) Lower Sideband Frequency Range (LO) Frequency Range (IF) RF Return Loss (S11) IF Return Loss (S22) LO Return Loss (S33) Conversion Loss (S21) LO Input Drive (PLO) Isolation LO/RF Isolation LO/IF Isolation RF/IF Input Third Order Intercept (IIP3) Gate Bias Voltage (Vg1) Units GHz GHZ GHz GHz dB dB dB dB dBm dB dB dB dBm VDC Min. 32.0 33.0 29.0 DC -2.0 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Typ. 15.0 10.0 20.0 7.0 +15.0 TBD TBD TBD +24.0 -0.6 Max. 46.0 44.0 47.0 3.0 +0.1 Page 1 of 6 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 32.0-46.0 GHz GaAs MMIC Balanced Mixer November 2005 - Rev 21-Nov-05 M1000 Mixer Measurements XM1000 Vg=-1.1V, LSB LO=+12 dBm, IF=3 GHz, RF=-30 dBm, ~380 Devices Conversion Loss (dB) Conversion Loss (dB) XM1000 Vg=-1.1V, USB LO=+12 dBm, IF=3 GHz, RF=-30 dBm, ~380 Devices 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 -11 -12 30.0 31.0 32.0 33.0 34.0 35.0 36.0 37.0 38.0 39.0 40.0 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 -11 -12 -13 30.0 31.0 32.0 33.0 34.0 Max Median Mean Max -3sigma 0 0 -5 -5 LO Port Return Loss (dB) RF Port Return Loss (dB) 36.0 37.0 38.0 39.0 40.0 Median Mean -3sigma XM1000 Vg=-1.1V LO=+12 dBm, IF=3 GHz. RF=-30 dBm, ~210 Devices XM1000 Vg=-1.1V LO=+12 dBm, IF=3 GHz. RF=-30 dBm, ~210 Devices -10 -15 -20 -25 -30 -35 -10 -15 -20 -25 -30 -35 -40 -40 -45 27.0 35.0 Frequency (GHz) Frequency (GHz) 28.0 29.0 30.0 31.0 32.0 33.0 34.0 35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 -45 27.0 28.0 29.0 30.0 31.0 32.0 33.0 Frequency (GHz) Max Median Mean 34.0 35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 Frequency (GHz) -3sigma Max Median Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Mean -3sigma Page 2 of 6 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 32.0-46.0 GHz GaAs MMIC Balanced Mixer November 2005 - Rev 21-Nov-05 M1000 Mixer Measurements (cont.) 3_0058: USB Conversion gain (dB) vs. RF freq (GHz) Vg = -1.1V, LO = 12dBm, IF = 1GHz 3_0058: LSB Conversion gain (dB) vs. RF freq (GHz) Vg = -1.1V, LO = 12dBm, IF = 1GHz 0 0 -2 -2 -4 LSB Conversion gain (dB) USB Conversion gain (dB) -4 -6 -8 -10 -12 -6 -8 -10 -12 -14 -14 -16 -16 DeviceCoord=R3C1, LO Power (dBm)=12 DeviceCoord=R3C1, LO Power (dBm)=12 -18 -18 DeviceCoord=R4C1, LO Power (dBm)=12 DeviceCoord=R4C1, LO Power (dBm)=12 -20 -20 34 35 36 37 38 39 40 41 42 43 44 45 34 46 35 36 37 38 39 41 42 43 44 46 3_0058: LSB Conversion gain (dB) vs. RF freq (GHz) Vg = -1.1V, LO = 12dBm, IF = 3GHz 3_0058: USB Conversion gain (dB) vs. RF freq (GHz) Vg = -1.1V, LO = 12dBm, IF = 3GHz 0 -2 -4 -4 -6 -6 LSB Conversion gain (dB) 0 -2 -8 -10 -12 -8 -10 -12 -14 -14 -16 -16 DeviceCoord=R3C1, LO Power (dBm)=12 DeviceCoord=R3C1, LO Power (dBm)=12 -18 -18 DeviceCoord=R4C1, LO Power (dBm)=12 DeviceCoord=R4C1, LO Power (dBm)=12 -20 -20 36 37 38 39 40 41 42 43 44 45 34 46 35 36 37 38 39 40 41 42 43 RF freq (GHz) RF freq (GHz) 3_0058: LSB Conversion gain (dB) vs. RF freq (GHz) Vg = -1.1V, LO = 15dBm, IF = 1GHz 3_0058: LSB Conversion gain (dB) vs. RF freq (GHz) Vg = -1.1V, LO = 15dBm, IF = 3GHz 0 0 -2 -2 -4 -4 -6 -6 LSB Conversion gain (dB) LSB Conversion gain (dB) 45 RF freq (GHz) RF freq (GHz) USB Conversion gain (dB) 40 -8 -10 -12 -14 -8 -10 -12 -14 -16 -16 DeviceCoord=R3C1, LO Power (dBm)=15 DeviceCoord=R3C1, LO Power (dBm)=15 -18 -18 DeviceCoord=R4C1, LO Power (dBm)=15 DeviceCoord=R4C1, LO Power (dBm)=15 -20 -20 34 35 36 37 38 39 RF freq (GHz) 40 41 42 43 44 34 35 36 37 38 39 40 41 42 RF freq (GHz) Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 3 of 6 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 32.0-46.0 GHz GaAs MMIC Balanced Mixer November 2005 - Rev 21-Nov-05 M1000 Mixer Measurements (cont.) Input Referred IP3 vs Freq at USB Input Referred IP3 vs Freq at LSB 30 30 28 28 26 26 030200 5dBm 24 030200 5dBm 24 030200 10dBm 030200 15dBm 22 020200 5dBm 020200 10dBm 20 020200 15dBm 18 020300 5dBm IIP3 (dB) II P3 (dB) 030200 10dBm 030200 15dBm 22 020200 5dBm 020200 10dBm 20 020200 15dBm 18 020300 5dBm 020300 10dBm 16 020300 15dBm 020300 10dBm 16 14 14 12 12 10 020300 15dBm 10 30 32 34 36 38 40 42 30 32 34 36 RF (GHz ) 40 42 IP1dB vs LO Power at 36GHz IP1dB vs LO Power at 32GHz 18 18 16 16 14 020400 USB 12 030200 USB 10 030300 USB 8 020400 LSB 030200 LSB 6 030300 LSB Input Referred P1dB 14 Input Referred P1dB 38 RF (GHz) 020400 USB 12 030200 USB 10 030300 USB 8 020400 LSB 030200 LSB 6 030300 LSB 4 4 2 2 0 0 0 2 4 6 8 10 12 14 16 0 LO Power (dBm) 2 4 6 8 10 12 14 16 LO Power (dBm) IP1dB vs LO Power at 40GHz 14 Input Referred P1dB 12 10 020400 USB 030200 USB 8 030300 USB 020400 LSB 6 030200 LSB 030300 LSB 4 2 0 0 2 4 6 8 10 12 LO Power (dBm) Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 4 of 6 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 32.0-46.0 GHz GaAs MMIC Balanced Mixer November 2005 - Rev 21-Nov-05 0.386 (0.015) Mechanical Drawing 1.300 (0.051) 2 0.993 (0.039) M1000 0.785 0.983 (0.031) (0.039) 3 1 4 5 0.993 (0.039) 6 0.0 1.300 (0.051) 0.536 (0.021) 0.0 (Note: Engineering designator is 40BRFM0058) Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008) Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 1.048 mg. Bond Pad #1 (LO) Bond Pad #2 (Vg1) Vg1 LO 3 1 Bond Pad #5 (RF) Bond Pad #6 (IF) Vg2 [1] Vd[1] Bias Arrangement 2 Bond Pad #3 (Vg2) Bond Pad #4 (Vd) 4 5 RF App Note [1] Biasing - As shown in the bonding diagram, the pHEMT mixer devices are operated using a separate gate voltage Vg1. Set Vg1=-0.6V for optimum conversion loss performance. pHEMT test device (Vd,Vg2) with 100 Ohm resistor is provided so that mixer gate bias can be corrected for local Vto. App Note [2] Bias Arrangement - Each DC pad (Vg1) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended. 6 IF Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 5 of 6 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 32.0-46.0 GHz GaAs MMIC Balanced Mixer November 2005 - Rev 21-Nov-05 M1000 Handling and Assembly Information CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not ingest. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001 2 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold Germanium should be avoided). The work station temperature should be 310 C +- 10 C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 6 of 6 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.