IRF IRFS4229PBF

PD - 97080
IRFS4229PbF
PDP SWITCH
Features
l Advanced Process Technology
l Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
l Low E PULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
l Low Q G for Fast Response
l High Repetitive Peak Current Capability for
Reliable Operation
l Short Fall & Rise Times for Fast Switching
l175°C Operating Junction Temperature for
Improved Ruggedness
l Repetitive Avalanche Capability for Robustness
and Reliability
Key Parameters
VDS min
VDS (Avalanche) typ.
RDS(ON) typ. @ 10V
IRP max @ TC= 100°C
TJ max
250
300
42
91
175
D
V
V
m:
A
°C
D
S
G
G
S
D
D2Pak
G
D
S
Gate
Drain
Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Max.
Parameter
VGS
ID @ TC = 25°C
Units
Gate-to-Source Voltage
±30
V
Continuous Drain Current, VGS @ 10V
45
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
32
IDM
Pulsed Drain Current
180
IRP @ TC = 100°C
Repetitive Peak Current
c
g
91
PD @TC = 25°C
Power Dissipation
330
PD @TC = 100°C
Power Dissipation
190
W
Linear Derating Factor
2.2
W/°C
TJ
Operating Junction and
-40 to + 175
°C
TSTG
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
x
300
x
10lb in (1.1N m)
N
Thermal Resistance
Parameter
RθJC
RθJA
f
Junction-to-Case
Junction-to-Ambient
f
Typ.
–––
–––
Max.
0.45*
62
Units
* RθJC (end of life) for D2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes  through … are on page 9
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1
04/12/06
IRFS4229PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Conditions
Min.
Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
250
–––
–––
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
210
–––
RDS(on)
Static Drain-to-Source On-Resistance
–––
42
48
VGS(th)
Gate Threshold Voltage
3.0
–––
5.0
V
∆VGS(th)/∆TJ
Gate Threshold Voltage Coefficient
–––
-14
–––
mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
–––
–––
1.0
mA
VDS = 250V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
V
VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 26A
e
VDS = VGS, ID = 250µA
VDS = 250V, VGS = 0V
VGS = -20V
gfs
Forward Transconductance
83
–––
–––
S
VDS = 25V, ID = 26A
Qg
Total Gate Charge
–––
72
110
nC
VDD = 125V, ID = 26A, VGS = 10V
Qgd
Gate-to-Drain Charge
–––
26
–––
tst
Shoot Through Blocking Time
100
–––
–––
ns
VDD = 200V, VGS = 15V, RG= 4.7Ω
–––
790
–––
–––
1390
–––
EPULSE
Energy per Pulse
e
L = 220nH, C= 0.3µF, VGS = 15V
µJ
VDS = 200V, RG= 4.7Ω, TJ = 25°C
L = 220nH, C= 0.3µF, VGS = 15V
VDS = 200V, RG= 4.7Ω, TJ = 100°C
VGS = 0V
Ciss
Input Capacitance
–––
4560
–––
Coss
Output Capacitance
–––
390
–––
Crss
Reverse Transfer Capacitance
–––
100
–––
ƒ = 1.0MHz,
Coss eff.
Effective Output Capacitance
–––
290
–––
VGS = 0V, VDS = 0V to 200V
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
pF
nH
LS
Internal Source Inductance
–––
7.5
VDS = 25V
D
and center of die contact
–––
G
S
Avalanche Characteristics
Parameter
EAS
EAR
VDS(Avalanche)
IAS
d
Repetitive Avalanche Energy c
Repetitive Avalanche Voltagec
Avalanche Currentd
Single Pulse Avalanche Energy
Typ.
Max.
Units
–––
130
mJ
–––
33
mJ
300
–––
V
–––
26
A
Diode Characteristics
Parameter
IS @ TC = 25°C Continuous Source Current
Min.
Typ. Max. Units
–––
–––
(Body Diode)
ISM
Pulsed Source Current
c
–––
–––
(Body Diode)
45
Conditions
MOSFET symbol
A
showing the
integral reverse
180
p-n junction diode.
e
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 26A, VGS = 0V
trr
Reverse Recovery Time
–––
190
290
ns
TJ = 25°C, IF = 26A, VDD = 50V
Qrr
Reverse Recovery Charge
–––
840
1260
nC
di/dt = 100A/µs
2
e
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IRFS4229PbF
1000
1000
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
100
BOTTOM
10
5.5V
1
100
BOTTOM
5.5V
10
≤ 60µs PULSE WIDTH
Tj = 25°C
≤ 60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
10
100
Fig 2. Typical Output Characteristics
3.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1000
ID, Drain-to-Source Current(Α)
1
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
TJ = 175°C
10
1
TJ = 25°C
0.1
VDS = 25V
≤ 60µs PULSE WIDTH
0.01
4.0
5.0
6.0
7.0
ID = 26A
VGS = 10V
3.0
2.5
2.0
1.5
1.0
0.5
0.0
8.0
-60 -40 -20
VGS, Gate-to-Source Voltage (V)
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
1600
1400
L = 220nH
C = 0.3µF
100°C
25°C
1200
L = 220nH
C = Variable
100°C
25°C
1200
Energy per pulse (µJ)
Energy per pulse (µJ)
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
800
400
1000
800
600
400
200
0
0
150
160
170
180
190
200
VDS, Drain-to -Source Voltage (V)
Fig 5. Typical EPULSE vs. Drain-to-Source Voltage
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100
110
120
130
140
150
160
170
ID, Peak Drain Current (A)
Fig 6. Typical EPULSE vs. Drain Current
3
IRFS4229PbF
2000
1000
L = 220nH
Energy per pulse (µJ)
ISD , Reverse Drain Current (A)
C= 0.3µF
C= 0.2µF
C= 0.1µF
1600
1200
800
400
100
TJ = 175°C
10
1
TJ = 25°C
VGS = 0V
0
0.1
25
50
75
100
125
150
0.2
Temperature (°C)
Fig 7. Typical EPULSE vs.Temperature
7000
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
20
Coss = Cds + Cgd
5000
Ciss
4000
3000
Coss
2000
0.6
0.8
1.0
1.2
Fig 8. Typical Source-Drain Diode Forward Voltage
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
6000
0.4
VSD, Source-to-Drain Voltage (V)
ID= 26A
VDS = 160V
VDS = 100V
16
VDS = 40V
12
8
4
1000
Crss
0
0
1
10
100
0
1000
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage
60
80
100
120
Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage
50
ID, Drain-to-Source Current (A)
1000
40
ID, Drain Current (A)
40
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
30
20
10
0
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1µsec
100
100µsec
10µsec
10
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
25
50
75
100
125
150
175
TJ , Junction Temperature (°C)
Fig 11. Maximum Drain Current vs. Case Temperature
4
20
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 12. Maximum Safe Operating Area
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0.40
EAS, Single Pulse Avalanche Energy (mJ)
()
RDS (on), Drain-to -Source On Resistance Ω
IRFS4229PbF
ID = 26A
0.30
0.20
TJ = 125°C
0.10
TJ = 25°C
600
I D
7.4A
13A
BOTTOM 26A
TOP
500
400
300
200
100
0.00
0
5
6
7
8
9
10
25
VGS, Gate-to-Source Voltage (V)
100
125
150
175
Fig 14. Maximum Avalanche Energy Vs. Temperature
5.0
140
4.5
120
Repetitive Peak Current (A)
VGS(th) Gate threshold Voltage (V)
75
Starting TJ, Junction Temperature (°C)
Fig 13. On-Resistance Vs. Gate Voltage
4.0
50
ID = 250µA
3.5
3.0
2.5
ton= 1µs
Duty cycle = 0.25
Half Sine Wave
Square Pulse
100
2.0
80
60
40
20
1.5
0
-75 -50 -25
0
25
50
75
100 125 150 175
25
50
75
100
125
150
175
Case Temperature (°C)
TJ , Temperature ( °C )
Fig 16. Typical Repetitive peak Current vs.
Case temperature
Fig 15. Threshold Voltage vs. Temperature
Thermal Response ( ZthJC )
1
D = 0.50
0.1
0.20
0.10
0.05
0.01
τJ
0.02
0.01
R1
R1
τJ
τ1
R2
R2
R3
R3
Ri (°C/W)
τC
τ2
τ1
τ2
Ci= τi/Ri
Ci= τi/Ri
τ3
τ3
τ
τι (sec)
0.080717 0.000052
0.209555 0.001021
0.159883 0.007276
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFS4229PbF
Driver Gate Drive
D.U.T
ƒ
+
‚
-
-

*
RG
•
•
•
•
„
***
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D=
Period
P.W.
+
V DD
**
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
V(BR)DSS
15V
DRIVER
L
VDS
tp
D.U.T
RG
+
V
- DD
IAS
VGS
20V
tp
A
0.01Ω
I AS
Fig 19a. Unclamped Inductive Test Circuit
Fig 19b. Unclamped Inductive Waveforms
Id
Vds
Vgs
L
VCC
DUT
0
1K
Vgs(th)
Qgs1 Qgs2
Fig 20a. Gate Charge Test Circuit
6
Qgd
Qgodr
Fig 20b. Gate Charge Waveform
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IRFS4229PbF
PULSE A
A
RG
C
DRIVER
L
PULSE B
VCC
B
Ipulse
RG
tST
DUT
Fig 21a. tst and EPULSE Test Circuit
Fig 21b. tst Test Waveforms
Fig 21c. EPULSE Test Waveforms
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IRFS4229PbF
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
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IRFS4229PbF
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
1.65 (.065)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 0.37mH, RG = 25Ω, IAS = 26A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ Rθ is measured at TJ of approximately 90°C.
… Half sine wave with duty cycle = 0.25, ton=1µsec.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/2006
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9