VISHAY TLWR8600

TLWR/Y8600
Vishay Semiconductors
TELUX™
FEATURES
• Utilizing one of the world’s brightest (AS)
AllnGaP technologies
• High luminous flux
e3
• Supreme heat dissipation: RthJP is 90 K/W
• High operating temperature:
Tamb = - 40 to + 110 °C
• Meets SAE and ECE color requirements for the
automobile industry for color red
• Packed in tubes for automatic insertion
• Luminous flux, forward voltage and color
categorized for each tube
• Small mechanical tolerances allow precise usage
of external reflectors or lightguides
• Lead (Pb)-free device
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
• Compatible with wave solder processes acc. to
CECC 00802 and J-STD-020C
• ESD-withstand voltage:
up to 2 kV according to JESD22-A114-B
• Qualified according Vishay automotive requirement
19232
DESCRIPTION
The TELUX™ series is a clear, non diffused LED for
applications where supreme luminous flux is required.
It is designed in an industry standard 7.62 mm square
package utilizing highly developed (AS) AllnGaP
technology.
The supreme heat dissipation of TELUX™ allows
applications at high ambient temperatures.
All packing units are binned for luminous flux, forward
voltage and color to achieve the most homogenous
light appearance in application.
SAE and ECE color requirements for automobile
application are available for color red.
APPLICATIONS
• Exterior lighting
• Dashboard illumination
• Tail-, Stop - and Turn Signals of motor vehicles
• Replaces small incandescent lamps
• Traffic signals and signs
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
• Product series: TELUX Power
• Package: TELUX™ Standard
• Angle of half intensity: ± 30°
PARTS TABLE
COLOR, LUMINOUS FLUX
TECHNOLOGY
TLWR8600
PART
Red, φV = 3000 mlm (typ.)
AllnGaP on GaAs
TLWY8600
Yellow, φV = 3000 mlm (typ.)
AllnGaP on GaAs
Document Number 83168
Rev. 2.3, 19-Apr-07
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1
TLWR/Y8600
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS1) TLWR8600, TLWY8600
PARAMETER
TEST CONDITION
SYMBOL
VALUE
IR = 100 µA
VR
10
V
Tamb ≤ 85 °C
IF
70
mA
tp ≤ 10 µs
IFSM
1
A
Power dissipation
PV
187
mW
Junction temperature
Tj
125
°C
Operating temperature range
Tamb
- 40 to + 110
°C
Storage temperature range
Tstg
- 55 to + 110
°C
t ≤ 5 s, 1.5 mm from body preheat
temperature
100 °C/ 30 sec.
Tsd
260
°C
with cathode heatsink
of 70 mm2
RthJA
200
K/W
RthJP
90
K/W
Reverse voltage2)
DC Forward current
Surge forward current
Soldering temperature
Thermal resistance junction/
ambient
Thermal resistance junction/pin
UNIT
Note:
1) T
amb = 25 °C, unless otherwise specified
2) Driving the LED in reverse direction is suitable for a short term application
OPTICAL AND ELECTRICAL CHARACTERISTICS1) TLWR8600, RED
PARAMETER
Total flux
TEST CONDITION
SYMBOL
MIN
TYP.
IF = 70 mA, RthJA = 200 °K/W
φV
2000
3000
611
615
MAX
UNIT
mlm
Luminous intensity/Total flux
IF = 70 mA, RthJA = 200 °K/W
IV/φV
Dominant wavelength
IF = 70 mA, RthJA = 200 °K/W
λd
Peak wavelength
IF = 70 mA, RthJA = 200 °K/W
λp
624
nm
Angle of half intensity
IF = 70 mA, RthJA = 200 °K/W
ϕ
± 30
deg
90 % of Total Flux Captured
ϕ0.9V
75
deg
Total included angle
0.8
mcd/mlm
634
nm
Forward voltage
IF = 70 mA, RthJA = 200 °K/W
VF
1.83
2.2
Reverse voltage
IR = 10 µA
VR
10
20
V
VR = 0, f = 1 MHz
Cj
17
pF
Junction capacitance
2.67
V
Note:
1)
Tamb = 25 °C, unless otherwise specified
OPTICAL AND ELECTRICAL CHARACTERISTICS1) TLWY8600, YELLOW
PARAMETER
Total flux
TEST CONDITION
SYMBOL
MIN
TYP.
IF = 70 mA, RthJA = 200 °K/W
φV
2000
3000
585
590
MAX
UNIT
mlm
Luminous intensity/Total flux
IF = 70 mA, RthJA = 200 °K/W
IV/φV
Dominant wavelength
IF = 70 mA, RthJA = 200 °K/W
λd
Peak wavelength
IF = 70 mA, RthJA = 200 °K/W
λp
594
nm
Angle of half intensity
IF = 70 mA, RthJA = 200 °K/W
ϕ
± 30
deg
75
deg
0.8
mcd/mlm
597
nm
90 % of Total Flux Captured
ϕ0.9V
Forward voltage
IF = 70 mA, RthJA = 200 °K/W
VF
1.83
2.1
Reverse voltage
IR = 10 µA
VR
10
15
V
VR = 0, f = 1 MHz
Cj
17
pF
Total included angle
Junction capacitance
2.67
V
Note:
1)
Tamb = 25 °C, unless otherwise specified
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Document Number 83168
Rev. 2.3, 19-Apr-07
TLWR/Y8600
Vishay Semiconductors
LUMINOUS FLUX CLASSIFICATION
GROUP
COLOR CLASSIFICATION
LUMINOUS FLUX (MLM)
STANDARD
MIN
MAX
D
2000
3000
E
2500
3600
DOM. WAVELENGTH (NM)
GROUP
YELLOW
RED
MIN.
MAX.
0
585
588
MIN.
MAX.
F
3000
4200
1
587
591
611
618
G
3500
4800
2
589
594
614
622
H
4000
6100
3
592
597
616
634
I
5000
7300
K
6000
9700
L
7000
12200
M
8000
15000
Note:
Wavelengths are tested at a current pulse duration of 25 ms and an
accuracy of ± 1 nm.
Note:
Luminous flux is tested at a current pulse duration of 25 ms and an
accuracy of ± 11 %.
The above type numbers represent the order groups which include
only a few brightness groups. Only one group will be shipped on
each tube (there will be no mixing of two groups on each tube).
In order to ensure availability, single brightness groups will be not
orderable.
In a similar manner for colors where wavelength groups are
measured and binned, single wavelength groups will be shipped in
any one tube.
In order to ensure availability, single wavelength groups will not be
orderable.
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
10000
100
red, yellow
I F - Forward Current (mA)
IF - Forward Current (mA)
red, yellow
80
60
40
RthJA = 200 K/W
20
1000
18019
20
40
60
80
100
0.1
100
1
10
1
0.01
120
Tamb - Ambient Temperature (°C)
Figure 1. Forward Current vs. Ambient Temperature
Document Number 83168
Rev. 2.3, 19-Apr-07
Tamb ≤ 85 °C
0.02
0.05
0
0
tp/T = 0.01
18020
0.2
0.5
0.1
1
10
100
t p - Pulse Length (ms)
Figure 2. Forward Current vs. Pulse Length
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TLWR/Y8600
Vishay Semiconductors
0°
10°
20°
100
I v rel - Relative Luminous Intensity
30°
90
0.9
50°
0.8
60°
70°
0.7
80°
0.6
0.4
0.2
0
0.2
0.4
I F - Forward Current (mA)
40°
1.0
80
60
50
40
30
20
10
0.6
16006
20176
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
100
red
1.1
90
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
70
60
50
40
30
20
10
0.0
0
1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4
570 580 590 600 610 620 630 640 650 660 670
λ - Wavelength (nm)
Figure 4. Relative Intensity vs. Wavelength
1.2
1.1
yellow
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
540 550 560 570 580 590 600 610 620 630 640
16008
λ - Wavelength (nm)
Figure 5. Relative Intensity vs. Wavelength
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V F - Forward Voltage (V)
15975
Figure 7. Forward Current vs. Forward Voltage
10
I Vrel - Relative Luminous Intensity
16007
yellow
80
I F - Forward Current (mA)
I Vrel - Relative Luminous Intensity
0
1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5
V F - Forward Voltage (V)
Figure 6. Forward Current vs. Forward Voltage
1.2
I Vrel - Relative Luminous Intensity
red
70
red
1
0.1
0.01
1
15978
10
IF - Forward Current (mA)
100
Figure 8. Relative Luminous Flux vs. Forward Current
Document Number 83168
Rev. 2.3, 19-Apr-07
TLWR/Y8600
Vishay Semiconductors
1.8
IV rel - Relative Luminous Intensity
10
Φ V rel - Relative Luminous Flux
yellow
1
0.1
0.01
1
10
100
IF - Forward Current (mA)
15979
Figure 9. Relative Luminous Flux vs. Forward Current
1.6
red
I F = 70 mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
- 40 - 20
0
20
40
60
80 100
Tamb - Ambient Temperature (°C)
18021
Figure 12. Rel. Luminous Flux vs. Ambient Temperature
Φ V rel - Relative Luminous Flux
I Spec - Specific Luminous Flux
2.0
red
1.0
10
100
IF - Forward Current (mA)
18022
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
15977
Figure 10. Specific Luminous Flux vs. Forward Current
I F = 70 mA
1.6
0.0
- 40 - 20
0.1
1
yellow
1.8
Figure 13. Rel. Luminous Flux vs. Ambient Temperature
Padsize 8 mm2
per Anode Pin
220
1.0
210
R thJA in K/W
I Spec - Specific Luminous Flux
230
yellow
200
190
180
170
160
0.1
1
15981
10
100
I F - Forward Current (mA)
Figure 11. Specific Luminous Flux vs. Forward Current
Document Number 83168
Rev. 2.3, 19-Apr-07
0
16009
50
100 150 200 250
Cathode Padsize mm2
300
Figure 14. Thermal Resistance Junction Ambient vs.
Cathode Padsize
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TLWR/Y8600
Vishay Semiconductors
100
90
% Total Luminous Flux
80
70
60
50
40
30
20
10
0
0
16005
25
50
75
100
125
Total Included Angle (Degrees)
Figure 15. Percentage Total Luminous Flux vs.
Total Included Angle for 60° emission angle
PACKAGE DIMENSIONS in millimeters
16004
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Document Number 83168
Rev. 2.3, 19-Apr-07
TLWR/Y8600
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and
expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such
unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 83168
Rev. 2.3, 19-Apr-07
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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