WINBOND W9825G6EH-6

W9825G6EH
4 M × 4 BANKS × 16 BITS SDRAM
Table of Contents1.
GENERAL DESCRIPTION ......................................................................................................... 3
2.
FEATURES ................................................................................................................................. 3
3.
AVAILABLE PART NUMBER...................................................................................................... 4
4.
PIN CONFIGURATION ............................................................................................................... 4
5.
PIN DESCRIPTION..................................................................................................................... 5
6.
BLOCK DIAGRAM ...................................................................................................................... 6
7.
FUNCTIONAL DESCRIPTION.................................................................................................... 7
7.1
Power Up and Initialization ............................................................................................. 7
7.2
Programming Mode Register.......................................................................................... 7
7.3
Bank Activate Command ................................................................................................ 7
7.4
Read and Write Access Modes ...................................................................................... 7
7.5
Burst Read Command .................................................................................................... 8
7.6
Burst Write Command .................................................................................................... 8
7.7
Read Interrupted by a Read ........................................................................................... 8
7.8
Read Interrupted by a Write............................................................................................ 8
7.9
Write Interrupted by a Write............................................................................................ 8
7.10
Write Interrupted by a Read............................................................................................ 8
7.11
Burst Stop Command ..................................................................................................... 8
7.12
Addressing Sequence of Sequential Mode .................................................................... 9
7.13
Addressing Sequence of Interleave Mode...................................................................... 9
7.14
Auto-precharge Command ........................................................................................... 10
7.15
Precharge Command.................................................................................................... 10
7.16
Self Refresh Command ................................................................................................ 10
7.17
Power Down Mode ....................................................................................................... 11
7.18
No Operation Command............................................................................................... 11
7.19
Deselect Command ...................................................................................................... 11
7.20
Clock Suspend Mode.................................................................................................... 11
8.
OPERATION MODE ................................................................................................................. 12
9.
ELECTRICAL CHARACTERISTICS......................................................................................... 13
9.1
Absolute Maximum Ratings .......................................................................................... 13
9.2
Recommended DC Operating Conditions .................................................................... 13
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Publication Release Date: Dec. 24, 2007
Revision A02
W9825G6EH
10.
11.
12.
9.3
Capacitance .................................................................................................................. 13
9.4
DC Characteristics ........................................................................................................ 14
9.5
AC Characteristics and Operating Condition................................................................ 15
TIMING WAVEFORMS ............................................................................................................. 17
10.1
Command Input Timing ................................................................................................ 17
10.2
Read Timing.................................................................................................................. 18
10.3
Control Timing of Input/Output Data ............................................................................. 19
10.4
Mode Register Set Cycle .............................................................................................. 20
OPERATING TIMING EXAMPLE ............................................................................................. 21
11.1
Interleaved Bank Read (Burst Length = 4, CAS Latency = 3)...................................... 21
11.2
Interleaved Bank Read (Burst Length = 4, CAS Latency = 3, Auto-precharge)........... 22
11.3
Interleaved Bank Read (Burst Length = 8, CAS Latency = 3)...................................... 23
11.4
Interleaved Bank Read (Burst Length = 8, CAS Latency = 3, Auto-precharge)........... 24
11.5
Interleaved Bank Write (Burst Length = 8) ................................................................... 25
11.6
Interleaved Bank Write (Burst Length = 8, Auto-precharge) ........................................ 26
11.7
Page Mode Read (Burst Length = 4, CAS Latency = 3)............................................... 27
11.8
Page Mode Read / Write (Burst Length = 8, CAS Latency = 3) ................................... 28
11.9
Auto-precharge Read (Burst Length = 4, CAS Latency = 3) ........................................ 29
11.10
Auto-precharge Write (Burst Length = 4) .................................................................... 30
11.11
Auto Refresh Cycle ..................................................................................................... 31
11.12
Self Refresh Cycle....................................................................................................... 32
11.13
Burst Read and Single Write (Burst Length = 4, CAS Latency = 3)............................ 33
11.14
Power Down Mode ...................................................................................................... 34
11.15
Auto-precharge Timing (Read Cycle).......................................................................... 35
11.16
Auto-precharge Timing (Write Cycle).......................................................................... 36
11.17
Timing Chart of Read to Write Cycle........................................................................... 37
11.18
Timing Chart of Write to Read Cycle........................................................................... 37
11.19
Timing Chart of Burst Stop Cycle (Burst Stop Command).......................................... 38
11.20
Timing Chart of Burst Stop Cycle (Precharge Command) .......................................... 38
11.21
CKE/DQM Input Timing (Write Cycle) ......................................................................... 39
11.22
CKE/DQM Input Timing (Read Cycle)......................................................................... 40
PACKAGE SPECIFICATION .................................................................................................... 41
12.1
13.
54L TSOP II - 400 mil ................................................................................................... 41
REVISION HISTORY ................................................................................................................ 42
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Publication Release Date: Dec. 24, 2007
Revision A02
W9825G6EH
1. GENERAL DESCRIPTION
W9825G6EH is a high-speed synchronous dynamic random access memory (SDRAM), organized as
4M words × 4 banks × 16 bits. W9825G6EH delivers a data bandwidth of up to 166M words per
second (-6). To fully comply with the personal computer industrial standard, W9825G6EH is sorted
into the following speed grades: -6/-6C and -75. The - 6 is compliant to the 166MHz/CL3 or
133MHz/CL2 specification. The – 6C is compliant to the 166MHz/CL3 specification. The -75 is
compliant to the 133MHz/CL3 specification.
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be
accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE
command. Column addresses are automatically generated by the SDRAM internal counter in burst
operation. Random column read is also possible by providing its address at each clock cycle. The
multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle,
interleave or sequential burst to maximize its performance. W9825G6EH is ideal for main memory in
high performance applications.
2. FEATURES
•
3.3V ± 0.3V Power Supply
•
Up to 166 MHz Clock Frequency
•
4,194,304 Words × 4 Banks × 16 Bits Organization
•
Self Refresh Mode: Standard and Low Power
•
CAS Latency: 2 and 3
•
Burst Length: 1, 2, 4, 8 and Full Page
•
Burst Read, Single Writes Mode
•
Byte Data Controlled by LDQM, UDQM
•
Power Down Mode
•
Auto-precharge and Controlled Precharge
•
8K Refresh Cycles/64 mS
•
Interface: LVTTL
•
Packaged in TSOP II 54-pin, 400 mil - 0.80, using Lead free materials with RoHS compliant
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Publication Release Date:Dec. 24, 2007
Revision A02
W9825G6EH
3. AVAILABLE PART NUMBER
SPEED
GRADE
PART NUMBER
SELF REFRESH
CURRENT (MAX)
OPERATING
TEMPERATURE
3mA
0°C ~ 70°C
W9825G6EH-6C
166MHz/CL3
or
133MHz/CL2
166MHz/CL3
3mA
0°C ~ 70°C
W9825G6EH-75
133MHz/CL3
3mA
0°C ~ 70°C
W9825G6EH-6
4. PIN CONFIGURATION
VCC
1
54
V SS
DQ0
2
53
DQ15
V C CQ
3
52
V SS Q
DQ1
4
51
DQ14
DQ2
5
50
DQ13
V SS Q
6
49
V C CQ
DQ3
7
48
DQ12
DQ4
8
47
DQ11
V C CQ
9
46
V SS Q
DQ5
10
45
DQ10
DQ6
11
44
DQ9
V SS Q
12
43
V C CQ
DQ7
13
42
DQ8
VCC
14
41
V SS
LDQM
15
40
NC
WE
16
39
UDQM
CAS
17
38
CLK
RAS
18
37
CKE
CS
19
36
A12
BS0
20
35
A11
BS1
21
34
A9
A10/AP
22
33
A8
A0
23
32
A7
A1
24
31
A6
A2
25
30
A5
A3
26
29
A4
VCC
27
28
V SS
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Publication Release Date: Dec. 24, 2007
Revision A02
W9825G6EH
5. PIN DESCRIPTION
PIN NUMBER
PIN NAME
FUNCTION
23−26, 22,
29−36
A0−A12
Address
20, 21
BS0, BS1
Bank Select
2, 4, 5, 7, 8, 10,
11, 13, 42, 44,
DQ0−DQ15
45, 47, 48, 50,
51, 53
19
18
CS
RAS
DESCRIPTION
Multiplexed pins for row and column address.
Row address: A0−A12. Column address: A0−A8.
Select bank to activate during row address latch time, or
bank to read/write during address latch time.
Data
Multiplexed pins for data output and input.
Input/Output
Chip Select
Disable or enable the command decoder. When
command decoder is disabled, new command is
ignored and previous operation continues.
Command input. When sampled at the rising edge of
Row Address
the clock, RAS , CAS and WE define the operation
Strobe
to be executed.
Column
Address
Strobe
17
CAS
16
WE
15, 39
LDQM,
UDQM
38
CLK
Clock Inputs
37
CKE
CKE controls the clock activation and deactivation.
Clock Enable When CKE is low, Power Down mode, Suspend mode,
or Self Refresh mode is entered.
1, 14, 27
VCC
Power (+3.3V) Power for input buffers and logic circuit inside DRAM.
28, 41, 54
VSS
3, 9, 43, 49
VCCQ
Power (+3.3V) Separated power from VCC, to improve DQ noise
for I/O Buffer immunity.
6, 12, 46, 52
VSSQ
Ground
Separated ground from VSS, to improve DQ noise
for I/O Buffer immunity.
40
NC
Referred to RAS
Write Enable Referred to RAS
The output buffer is placed at Hi-Z(with latency of 2)
Input/Output when DQM is sampled high in read cycle. In write
Mask
cycle, sampling DQM high will block the write operation
with zero latency.
Ground
No Connection
System clock used to sample inputs on the rising edge
of clock.
Ground for input buffers and logic circuit inside DRAM.
No connection. (NC pin should be connected to GND
or floating)
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Publication Release Date:Dec. 24, 2007
Revision A02
W9825G6EH
6. BLOCK DIAGRAM
CLK
CLO CK
BUFFER
CKE
CS
CO NTRO L
RAS
G ENERATO R
SIG NAL
CO MMAND
CAS
DECO DER
CO LUMN DECODER
COLUMN DECO DER
A10
MO DE
REGIST ER
A0
CELL ARRAY
BANK #0
CELL ARRAY
BANK #1
SENSE AMPLIFIER
SENSE AMPLIFIER
ADDRESS
BUFFER
DAT A CO NT RO L
DQ
BUFFER
CIRCUIT
DQ0
DQ15
COLUMN
CO UNT ER
LDQM
UDQM
CO LUMN DECO DER
COLUMN DECO DER
RO W DECO DER
REFRESH
CO UNT ER
RO W DECO DER
A9
A11
A12
BS0
BS1
RO W DECODER
RO W DECODER
WE
CELL ARRAY
BANK #2
SENSE AMPLIFIER
CELL ARRAY
BANK #3
SENSE AMPLIFIER
Note: The cell array configuration is 8192 * 512 * 16.
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Publication Release Date: Dec. 24, 2007
Revision A02
W9825G6EH
7. FUNCTIONAL DESCRIPTION
7.1
Power Up and Initialization
The default power up state of the mode register is unspecified. The following power up and
initialization sequence need to be followed to guarantee the device being preconditioned to each user
specific needs.
During power up, all Vcc and VccQ pins must be ramp up simultaneously to the specified voltage when
the input signals are held in the "NOP" state. The power up voltage must not exceed Vcc + 0.3V on
any of the input pins or Vcc supplies. After power up, an initial pause of 200 µS is required followed by
a precharge of all banks using the precharge command. To prevent data contention on the DQ bus
during power up, it is required that the DQM and CKE pins be held high during the initial pause period.
Once all banks have been precharged, the Mode Register Set Command must be issued to initialize
the Mode Register. An additional eight Auto Refresh cycles (CBR) are also required before or after
programming the Mode Register to ensure proper subsequent operation.
7.2
Programming Mode Register
After initial power up, the Mode Register Set Command must be issued for proper device operation.
All banks must be in a precharged state and CKE must be high at least one cycle before the Mode
Register Set Command can be issued. The Mode Register Set Command is activated by the low
signals of RAS , CAS , CS and WE at the positive edge of the clock. The address input data
during this cycle defines the parameters to be set as shown in the Mode Register Operation table. A
new command may be issued following the mode register set command once a delay equal to tRSC has
elapsed. Please refer to the next page for Mode Register Set Cycle and Operation Table.
7.3
Bank Activate Command
The Bank Activate command must be applied before any Read or Write operation can be executed.
The operation is similar to RAS activate in EDO DRAM. The delay from when the Bank Activate
command is applied to when the first read or write operation can begin must not be less than the RAS
to CAS delay time (tRCD). Once a bank has been activated it must be precharged before another Bank
Activate command can be issued to the same bank. The minimum time interval between successive
Bank Activate commands to the same bank is determined by the RAS cycle time of the device (tRC).
The minimum time interval between interleaved Bank Activate commands (Bank A to Bank B and vice
versa) is the Bank to Bank delay time (tRRD). The maximum time that each bank can be held active is
specified as tRAS (max).
7.4
Read and Write Access Modes
After a bank has been activated , a read or write cycle can be followed. This is accomplished by
setting RAS high and CAS low at the clock rising edge after minimum of tRCD delay. WE pin
voltage level defines whether the access cycle is a read operation ( WE high), or a write operation
( WE low). The address inputs determine the starting column address.
Reading or writing to a different row within an activated bank requires the bank be precharged and a
new Bank Activate command be issued. When more than one bank is activated, interleaved bank
Read or Write operations are possible. By using the programmed burst length and alternating the
access and precharge operations between multiple banks, seamless data access operation among
many different pages can be realized. Read or Write Commands can also be issued to the same bank
or between active banks on every clock cycle.
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Publication Release Date:Dec. 24, 2007
Revision A02
W9825G6EH
7.5
Burst Read Command
The Burst Read command is initiated by applying logic low level to CS and CAS while holding
RAS and WE high at the rising edge of the clock. The address inputs determine the starting
column address for the burst. The Mode Register sets type of burst (sequential or interleave) and the
burst length (1, 2, 4, 8 and full page) during the Mode Register Set Up cycle. Table 2 and 3 in the next
page explain the address sequence of interleave mode and sequential mode.
7.6
Burst Write Command
The Burst Write command is initiated by applying logic low level to CS , CAS and WE while
holding RAS high at the rising edge of the clock. The address inputs determine the starting column
address. Data for the first burst write cycle must be applied on the DQ pins on the same clock cycle
that the Write Command is issued. The remaining data inputs must be supplied on each subsequent
rising clock edge until the burst length is completed. Data supplied to the DQ pins after burst finishes
will be ignored.
7.7
Read Interrupted by a Read
A Burst Read may be interrupted by another Read Command. When the previous burst is interrupted,
the remaining addresses are overridden by the new read address with the full burst length. The data
from the first Read Command continues to appear on the outputs until the CAS Latency from the
interrupting Read Command the is satisfied.
7.8
Read Interrupted by a Write
To interrupt a burst read with a Write Command, DQM may be needed to place the DQs (output
drivers) in a high impedance state to avoid data contention on the DQ bus. If a Read Command will
issue data on the first and second clocks cycles of the write operation, DQM is needed to insure the
DQs are tri-stated. After that point the Write Command will have control of the DQ bus and DQM
masking is no longer needed.
7.9
Write Interrupted by a Write
A burst write may be interrupted before completion of the burst by another Write Command. When the
previous burst is interrupted, the remaining addresses are overridden by the new address and data
will be written into the device until the programmed burst length is satisfied.
7.10 Write Interrupted by a Read
A Read Command will interrupt a burst write operation on the same clock cycle that the Read
Command is activated. The DQs must be in the high impedance state at least one cycle before the
new read data appears on the outputs to avoid data contention. When the Read Command is
activated, any residual data from the burst write cycle will be ignored.
7.11 Burst Stop Command
A Burst Stop Command may be used to terminate the existing burst operation but leave the bank open
for future Read or Write Commands to the same page of the active bank. The Burst Stop Command is
defined by having RAS and CAS high with CS and WE low at the rising edge of the clock. The
data DQs go to a high impedance state after a delay which is equal to the CAS Latency in a burst read
cycle interrupted by Burst Stop.
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Publication Release Date: Dec. 24, 2007
Revision A02
W9825G6EH
7.12 Addressing Sequence of Sequential Mode
A column access is performed by increasing the address from the column address which is input to
the device. The disturb address is varied by the Burst Length as shown in Table 2.
Table 2 Address Sequence of Sequential Mode
DATA
ACCESS ADDRESS
BURST LENGTH
Data 0
n
BL = 2 (disturb address is A0)
Data 1
n+1
No address carry from A0 to A1
Data 2
n+2
BL = 4 (disturb addresses are A0 and A1)
Data 3
n+3
No address carry from A1 to A2
Data 4
n+4
Data 5
n+5
BL = 8 (disturb addresses are A0, A1 and A2)
Data 6
n+6
No address carry from A2 to A3
Data 7
n+7
7.13 Addressing Sequence of Interleave Mode
A column access is started in the input column address and is performed by inverting the address bit
in the sequence shown in Table 3.
Table 3 Address Sequence of Interleave Mode
DATA
ACCESS ADDRESS
Data 0
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 1
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 2
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 3
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 4
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 5
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 6
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 7
A8 A7 A6 A5 A4 A3 A2 A1 A0
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BURST LENGTH
BL = 2
BL = 4
BL = 8
Publication Release Date:Dec. 24, 2007
Revision A02
W9825G6EH
7.14 Auto-precharge Command
If A10 is set to high when the Read or Write Command is issued, then the Auto-precharge function is
entered. During Auto-precharge, a Read Command will execute as normal with the exception that the
active bank will begin to precharge automatically before all burst read cycles have been completed.
Regardless of burst length, it will begin a certain number of clocks prior to the end of the scheduled
burst cycle. The number of clocks is determined by CAS Latency.
A Read or Write Command with Auto-precharge can not be interrupted before the entire burst
operation is completed. Therefore, use of a Read, Write, or Precharge Command is prohibited during
a read or write cycle with Auto-precharge. Once the precharge operation has started, the bank cannot
be reactivated until the Precharge time (tRP) has been satisfied. Issue of Auto-pecharge command is
illegal if the burst is set to full page length. If A10 is high when a Write Command is issued, the Write
with Auto-pecharge function is initiated. The SDRAM automatically enters the precharge operation two
clock delay from the last burst write cycle. This delay is referred to as Write tWR. The bank undergoing
Auto-precharge can not be reactivated until tWR and tRP are satisfied. This is referred to as tDAL, Data-in
to Active delay (tDAL = tWR + tRP). When using the Auto-precharge Command, the interval between the
Bank Activate Command and the beginning of the internal precharge operation must satisfy tRAS (min).
7.15 Precharge Command
The Precharge Command is used to precharge or close a bank that has been activated. The
Precharge Command is entered when CS , RAS and WE are low and CAS is high at the rising
edge of the clock. The Precharge Command can be used to precharge each bank separately or all
banks simultaneously. Three address bits A10, BS0 and BS1 are used to define which bank(s) is to be
precharged when the command is issued. After the Precharge Command is issued, the precharged
bank must be reactivated before a new read or write access can be executed. The delay between the
Precharge Command and the Activate Command must be greater than or equal to the Precharge time
(tRP).
7.16 Self Refresh Command
The Self Refresh Command is defined by having CS , RAS , CAS and CKE held low with WE
high at the rising edge of the clock. All banks must be idle prior to issuing the Self Refresh Command.
Once the command is registered, CKE must be held low to keep the device in Self Refresh mode.
When the SDRAM has entered Self Refresh mode all of the external control signals, except CKE, are
disabled. The clock is internally disabled during Self Refresh Operation to save power. The device will
exit Self Refresh operation after CKE is returned high. A minimum delay time is required when the
device exits Self Refresh Operation and before the next command can be issued. This delay is equal
to the tAC cycle time plus the Self Refresh exit time.
If, during normal operation, AUTO REFRESH cycles are issued in bursts (as opposed to being evenly
distributed), a burst of 8,192 AUTO REFRESH cycles should be completed just prior to entering and
just after exiting the self refresh mode. The period between the Auto Refresh command and the next
command is specified by tRC.
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Publication Release Date: Dec. 24, 2007
Revision A02
W9825G6EH
7.17 Power Down Mode
The Power Down mode is initiated by holding CKE low. All of the receiver circuits except CKE are
gated off to reduce the power. The Power Down mode does not perform any refresh operations,
therefore the device can not remain in Power Down mode longer than the Refresh period (tREF) of the
device.
The Power Down mode is exited by bringing CKE high. When CKE goes high, a No Operation
Command is required on the next rising clock edge, depending on tCK. The input buffers need to be
enabled with CKE held high for a period equal to tCKS (min) + tCK (min).
7.18 No Operation Command
The No Operation Command should be used in cases when the SDRAM is in a idle or a wait state to
prevent the SDRAM from registering any unwanted commands between operations. A No Operation
Command is registered when CS is low with RAS , CAS and WE held high at the rising edge of
the clock. A No Operation Command will not terminate a previous operation that is still executing, such
as a burst read or write cycle.
7.19 Deselect Command
The Deselect Command performs the same function as a No Operation Command. Deselect
Command occurs when CS is brought high, the RAS , CAS and WE signals become don't
cares.
7.20 Clock Suspend Mode
During normal access mode, CKE must be held high enabling the clock. When CKE is registered low
while at least one of the banks is active, Clock Suspend Mode is entered. The Clock Suspend mode
deactivates the internal clock and suspends any clocked operation that was currently being executed.
There is a one clock delay between the registration of CKE low and the time at which the SDRAM
operation suspends. While in Clock Suspend mode, the SDRAM ignores any new commands that are
issued. The Clock Suspend mode is exited by bringing CKE high. There is a one clock cycle delay
from when CKE returns high to when Clock Suspend mode is exited.
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Publication Release Date:Dec. 24, 2007
Revision A02
W9825G6EH
8. OPERATION MODE
Fully synchronous operations are performed to latch the commands at the positive edges of CLK.
Table 1 shows the truth table for the operation commands.
Table 1 Truth Table (Note (1) , (2))
DEICE
STATE
COMMAND
CKEn-1 CKEn
DQM
BS0, 1
A10
A0−A9
A11, A12
CS
RAS
CAS
WE
Bank Active
Idle
H
x
x
v
v
v
L
L
H
H
Bank Precharge
Any
H
x
x
v
L
x
L
L
H
L
Precharge All
Any
H
x
x
x
H
x
L
L
H
L
Write
Active (3)
H
x
x
v
L
v
L
H
L
L
Write with Autoprecharge
Active (3)
H
x
x
v
H
v
L
H
L
L
Read
Active
(3)
H
x
x
v
L
v
L
H
L
H
Read with Autoprecharge
Active (3)
H
x
x
v
H
v
L
H
L
H
Idle
H
x
x
v
v
v
L
L
L
L
Mode Register Set
No-operation
Burst Stop
Device Deselect
Any
H
x
x
x
x
x
L
H
H
H
Active (4)
H
x
x
x
x
x
L
H
H
L
Any
H
x
x
x
x
x
H
x
x
x
Auto-refresh
Idle
H
H
x
x
x
x
L
L
L
H
Self-refresh Entry
Idle
H
L
x
x
x
x
L
L
L
H
Self-refresh Exit
Idle
(S.R.)
L
L
H
H
x
x
x
x
x
x
x
x
H
L
x
H
x
H
x
x
Clock Suspend Mode
Entry
Active
H
L
x
x
x
x
x
x
x
x
Idle
Active (5)
H
H
L
L
x
x
x
x
x
x
x
x
H
L
x
H
x
H
x
x
Active
L
H
x
x
x
x
x
x
x
x
Any
(Power Down)
L
L
H
H
x
x
x
x
x
x
x
x
H
L
x
H
x
H
x
x
Data Write/Output
Enable
Active
H
x
L
x
x
x
x
x
x
x
Data Write/Output
Disable
Active
H
x
H
x
x
x
x
x
x
x
Power Down Mode
Entry
Clock Suspend Mode
Exit
Power Down Mode
Exit
Notes:
(1) v = valid
x = Don't care
L = Low Level
H = High Level
(2) CKEn signal is input level when commands are provided.
CKEn-1 signal is the input level one clock cycle before the command is issued.
(3) These are state of bank designated by BS0, BS1 signals.
(4) Device state is full page burst operation.
(5) Power Down Mode can not be entered in the burst cycle.
When this command asserts in the burst cycle, device state is clock suspend mode.
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Publication Release Date: Dec. 24, 2007
Revision A02
W9825G6EH
9. ELECTRICAL CHARACTERISTICS
9.1
Absolute Maximum Ratings
PARAMETER
SYMBOL
RATING
UNIT
NOTES
Input, Output Voltage
VIN, VOUT
-0.3 ~ VCC + 0.3
V
1
Supply Voltage
VCC, VCCQ
-0.3 ~ 4.6
V
1
Operating Temperature
TOPR
0 ~ 70
°C
1
Storage Temperature
TSTG
-55 ~ 150
°C
1
TSOLDER
250
°C
1
PD
1
W
1
IOUT
50
mA
1
Soldering Temperature (10s)
Power Dissipation
Short Circuit Output Current
Note 1: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and
reliability of the device.
9.2
Recommended DC Operating Conditions
(TA = 0 to 70°C for –6/-6C/-75)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
NOTES
VCC
3.0
3.3
3.6
V
2
VCCQ
3.0
3.3
3.6
V
2
Input High Voltage
VIH
2.0
-
VCC + 0.3
V
2
Input Low Voltage
VIL
-0.3
-
0.8
V
2
Supply Voltage
Supply Voltage (for I/O Buffer)
Note 2: VIH(max) = VCC/VCCQ+1.2V for pulse width < 5 nS
VIL(min) = VSS/VSSQ-1.2V for pulse width < 5 nS
9.3
Capacitance
(VCC = 3.3V, f = 1 MHz, TA = 25°C)
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
Input Capacitance
(A0 to A12, BS0, BS1, CS , RAS , CAS , WE , LDQM,
UDQM, CKE)
CI
-
3.8
pf
Input Capacitance (CLK)
CCLK
-
3.5
pf
Input/Output Capacitance
CIO
-
6.5
pf
Note: These parameters are periodically sampled and not 100% tested.
- 13 -
Publication Release Date:Dec. 24, 2007
Revision A02
W9825G6EH
9.4
DC Characteristics
(VCC = 3.3V ± 0.3V, TA = 0 to 70°C for –6/-6C/-75)
PARAMETER
SYM.
-6/-6C
-75
MAX.
MAX.
UNIT
NOTES
Operating Current
tCK = min., tRC = min.
1 Bank Operation
ICC1
100
90
3
CKE = VIH
ICC2
50
35
3
CKE = VIL (Power Down mode)
ICC2P
2
2
3
CKE = VIH
ICC2S
15
15
CKE = VIL (Power Down mode)
ICC2PS
2
2
CKE = VIH
ICC3
70
55
CKE = VIL (Power Down mode)
ICC3P
10
10
ICC4
150
130
3, 4
ICC5
200
180
3
ICC6
3
3
Active precharge command
cycling without burst operation
Standby Current
tCK = min, CS
= VIH
VIH/L = VIH (min.)/VIL (max.)
Bank: Inactive state
Standby Current
CLK = VIL, CS = VIH
VIH/L = VIH (min.)/VIL (max.)
BANK: Inactive state
No Operating Current
tCK = min., CS
= VIH (min.)
BANK: Active state
(4 banks)
mA
Burst Operating Current
tCK = min.
Read/ Write command cycling
Auto Refresh Current
tCK = min.
Auto refresh command cycling
Self Refresh Current
Self Refresh Mode
CKE = 0.2V
PARAMETER
Input Leakage Current
(0V ≤ VIN ≤ VCC, all other pins not under test = 0V)
Output Leakage Current
(Output disable, 0V ≤ VOUT ≤ VCCQ)
LVTTL Output ″H″ Level Voltage
(IOUT = -2 mA )
LVTTL Output ″L″ Level Voltage
(IOUT = 2 mA )
SYMBOL
MIN.
MAX.
UNIT
II(L)
-5
5
µA
IO(L)
-5
5
µA
VOH
2.4
-
V
VOL
-
0.4
V
- 14 -
NOTES
Publication Release Date: Dec. 24, 2007
Revision A02
W9825G6EH
9.5
AC Characteristics and Operating Condition
(VCC = 3.3V
± 0.3V, TA = 0 to 70°C for -6/-6C/-75)
PARAMETER
SYM.
-6
MIN.
MAX.
MIN.
-6C
MAX.
MIN.
-75
MAX.
UNIT NOTES
Ref/Active to Ref/Active Command
Period
tRC
60
Active to precharge Command Period
tRAS
42
tRCD
15
18
20
nS
tCCD
1
1
1
tCK
Precharge to Active Command Period
tRP
15
18
20
nS
Active(a) to Active(b) Command
Period
tRRD
2
2
2
tCK
Write Recovery Time
tWR
2
2
2
tCK
tCK
tCK
7.5
1000
10
1000
10
1000
6
1000
6
1000
7.5
1000
Active to Read/Write Command Delay
Time
Read/Write(a) to Read/Write(b)
Command Period
CL* = 2
CL* = 3
CLK Cycle Time
CL* = 2
tCH
tCL
CLK Low Level Width
Access Time from
CLK
CL* = 2
100000
2
CL* = 3
CLK High Level Width
60
9
2
2
2.5
9
tAC
0
Mode register Set Cycle Time
tLZ
tSB
tT
tDS
tDH
tAS
tAH
tCKS
tCKH
tCMS
tCMH
tREF
tRSC
Exit self refresh to ACTIVE command
tXSR
Power Down Mode Entry Time
Transition Time of CLK (Rise and Fall)
Data-in Set-up Time
Data-in Hold Time
Address Set-up Time
Address Hold Time
CKE Set-up Time
CKE Hold Time
Command Set-up Time
Command Hold Time
Refresh Time
2
nS
2.5
6
6
6
10
5
5
5.4
10
2
5.4
CL* = 3
Output Data Low Impedance Time
100000
2
2
Output Data High
Impedance Time
45
nS
2
tOH
tHZ
CL* = 2
100000
2
CL* = 3
Output Data Hold Time
42
65
2.5
5.4
5.4
5.4
0
0
7
0
1
10
6
8
5.4
0
7
0
1
10
7.5
nS
1
7
1.5
1.5
1.5
9
0.8
0.7
1
9
1.5
1.5
1.5
9
0.8
0.7
1
9
1.5
1.5
1.5
9
0.8
0.7
1
9
1.5
1.5
1.5
9
0.8
0.7
64
1
64
9
64
mS
2
2
2
tCK
72
72
75
nS
*CL = CAS Latency
- 15 -
Publication Release Date:Dec. 24, 2007
Revision A02
W9825G6EH
Notes:
1. Operation exceeds "Absolute Maximum Ratings" may cause permanent damage to the devices.
2. All voltages are referenced to VSS.
3. These parameters depend on the cycle rate and listed values are measured at a cycle rate with the
minimum values of tCK and tRC.
4. These parameters depend on the output loading conditions. Specified values are obtained with
output open.
5. Power up sequence please refer to "Functional Description" section described before.
6. AC Test Load diagram.
1.4 V
50 ohms
output
Z = 50 ohms
30pF
AC TEST LOAD
7. Transition times are measured between VIH and VIL.
8. tHZ defines the time at which the outputs achieve the open circuit condition and is not referenced to
output level.
9. Assumed input rise and fall time (tT) = 1nS.
If tr & tf is longer than 1nS, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]nS should be added to the parameter
( The tT maximum can’t be more than 10nS for low frequency application. )
10. If clock transiton time tT is longer than 1nS, [(tT/2)-0.5]nS should be added to the parameter.
- 16 -
Publication Release Date: Dec. 24, 2007
Revision A02
W9825G6EH
10. TIMING WAVEFORMS
10.1 Command Input Timing
Command Input Timing
tCL
tCK
CLK
tCH
VIH
VIL
tCMS
tCMH
tCMS
tCMH
tCMS
tCMH
tCMS
tCMH
tAS
tAH
tT
tCMH
tT
tCMS
CS
RAS
CAS
WE
A0-A12
BS0, 1
tCKS
tCKH
tCKS
tCKH
tCKS
tCKH
CKE
- 17 -
Publication Release Date:Dec. 24, 2007
Revision A02
W9825G6EH
10.2
Read Timing
Read CAS Latency
CLK
CS
RAS
CAS
WE
A0 - A12
BS0, 1
tAC
tAC
tLZ
tHZ
tOH
tOH
Valid
Data-Out
Valid
Data-Out
DQ
Read Command
Burst Length
- 18 -
Publication Release Date: Dec. 24, 2007
Revision A02
W9825G6EH
10.3
Control Timing of Input/Output Data
Input Data
(Word Mask)
CLK
tCMS
tCMH
tCMH
tCMS
DQM
tDS
tDH
tDS
Valid
Data-in
DQ0 -15
tDH
tDS
Valid
Data-in
tDH
tDS
Valid
Data-in
tDH
Valid
Data-in
(Clock Mask)
CLK
tCKH
tCKS
tDH
tDS
tCKH
tCKS
CKE
tDS
DQ0 -15
Valid
Data-in
tDH
tDS
Valid
Data-in
tDH
tDS
Valid
Data-in
tDH
Valid
Data-in
Output Data
(Output Enable)
CLK
tCMS
tCMH
tCMH
tCMS
DQM
tAC
tOH
tOH
tHZ
tAC
tOH
Valid
Data-Out
DQ0 -15
Valid
Data-Out
tAC
tLZ
tOH
tAC
Valid
Data-Out
OPEN
(Clock Mask)
CLK
tCKH
tCKS
tCKH
tCKS
CKE
tAC
tOH
DQ0 -15
tAC
tAC
tOH
tOH
Valid
Data-Out
Valid
Data-Out
- 19 -
tOH
tAC
Valid
Data-Out
Publication Release Date:Dec. 24, 2007
Revision A02
W9825G6EH
10.4
Mode Register Set Cycle
tRSC
CLK
tCMS
tCMH
tCMS
tCMH
tCMS
tCMH
tCMS
tCMH
CS
RAS
CAS
WE
tAS
A0-A12
BS0,1
tAH
Register
set data
A0
A1
Burst Length
A2
A3
Addressing Mode
A4
A5
CAS Latency
A2
0
0
0
0
1
1
1
1
A6
A7
A0
"0"
A8
"0"
A9
A0
(Test Mode)
Reserved
WriteA0
Mode
A10
"0"
A11
A0
"0"
A12
"0"
BS0
A0
"0"
BS1
A0
"0"
A0
Reserved
A6
0
0
0
0
1
A0
A0
A1
A0
0
A0
0
A0
1
A0
1
A0
0
A0
0
A0
1
A0
1
A0
A3
A0
0
A0
1
A0
A5
A0
0
A0
0
A0
1
A0
1
A0
0
A0
A9
A0
0
A0
1
- 20 -
A0
0
1
0
1
0
1
0
1
A4
0
1
0
1
0
next
command
BurstA0
Length
Sequential
A0
Interleave
A0
1
A0
1
A0
2
A0
2
A0
4
A0
4
A0
8
A0
8
Reserved
A0
A0
Reserved
FullA0
Page
A0 Mode
Addressing
Sequential
A0
Interleave
A0
CAS A0
Latency
Reserved
A0
Reserved
A0
2
A0
3
Reserved
Single Write Mode
Burst read and
A0 Burst write
Burst read and
A0 single write
Publication Release Date: Dec. 24, 2007
Revision A02
W9825G6EH
11. OPERATING TIMING EXAMPLE
11.1 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3)
1
0
2
3
4
6
5
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
CS
tRC
tRC
tRC
tRC
RAS
tRAS
tRP
tRAS
tRAS
tRP
tRP
tRAS
CAS
WE
BS0
BS1
tRCD
A10
RAa
A0-A9,
A11,A12
RAa
tRCD
tRCD
RBb
CBx
RBb
CAw
tRCD
RAc
RBd
RAc
CAy
RAe
RBd
CBz
RAe
DQM
CKE
aw0
tRRD
Bank #0 Active
Bank #1
tAC
tAC
tAC
DQ
aw1
aw2
aw3
bx0
Precharge
Active
bx2
bx3
Active
cy1
cy2
cy3
tRRD
Precharge
Read
Precharge
Read
tAC
cy0
tRRD
tRRD
Read
bx1
Active
Active
Read
Bank #2
Idle
Bank #3
- 21 -
Publication Release Date:Dec. 24, 2007
Revision A02
W9825G6EH
11.2 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3, Auto-precharge)
0
1
2
3
4
6
5
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
CS
tRC
tRC
tRC
tRC
RAS
tRAS
tRP
tRAS
tRAS
tRP
tRP
tRAS
CAS
WE
BS0
BS1
tRCD
tRCD
tRCD
A10
RAa
RBb
A0-A9,
A11, A12
RAa
CAw RBb
tRCD
CBx
RAe
RBd
RAc
CAy
RAc
CBz
RBd
RAe
DQM
CKE
tAC
DQ
tRRD
Active
Bank #0
Bank #1
Bank #2
aw1
aw2
aw3
bx0
Active
AP*
Active
bx1
bx2
bx3
tAC
cy0
cy1
tRRD
tRRD
Read
tAC
tAC
aw0
Read
cy3
dz0
tRRD
Read
AP*
cy2
AP*
Active
Active
Read
Idle
Bank #3
* AP is the internal precharge start timing
- 22 -
Publication Release Date: Dec. 24, 2007
Revision A02
W9825G6EH
11.3
Interleaved Bank Read (Burst Length = 8, CAS Latency = 3)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
CS
tRC
tRC
tRC
RAS
tRAS
tRP
tRAS
tRP
tRAS
tRP
CAS
WE
BS0
BS1
tRCD
A10
RAa
A0-A9,
A11,A12
RAa
tRCD
tRCD
RAc
RBb
CAx
RBb
CBy
RAc
CAz
DQM
CKE
tAC
DQ
tAC
ax0
ax1
tRRD
Bank #0
Active
Bank #2
ax3
ax4
ax5
ax6
by0
by1
by4
by5
by6
by7
CZ0
tRRD
Read
Precharge
Bank #1
ax2
tAC
Precharge
Active
Read
Active
Read
Precharge
Idle
Bank #3
- 23 -
Publication Release Date:Dec. 24, 2007
Revision A02
W9825G6EH
11.4
Interleaved Bank Read (Burst Length = 8, CAS Latency = 3, Auto-precharge)
0
1
2
3
4
6
5
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
tRC
CS
RAS
tRAS
tRAS
tRP
tRAS
tRP
CAS
WE
BS0
BS1
tRCD
A10
A0-A9,
A11,A12
RBb
RAa
RAa
tRCD
tRCD
CAx
RAc
RBb
RAc
CBy
CAz
DQM
CKE
tCAC
tCAC
DQ
ax0
ax1
ax2
tRRD
Bank #0
Active
Bank #2
Bank #3
Idle
ax4
ax5
ax6
ax7
by0
by1
by4
by5
by6
CZ0
tRRD
AP*
Read
Active
Bank #1
ax3
tCAC
Active
Read
Read
AP*
* AP is the internal precharge start timing
- 24 -
Publication Release Date: Dec. 24, 2007
Revision A02
W9825G6EH
11.5
Interleaved Bank Write (Burst Length = 8)
1
0
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
CS
tRC
RAS
tRAS
tRAS
tRP
tRP
tRAS
CAS
tRCD
tRCD
tRCD
WE
BS0
BS1
A10
A0-A9,
A11,A12
RBb
RAa
RAa
CAx
RAc
RBb
CBy
RAc
CAz
DQM
CKE
DQ
ax0
ax1
ax4
ax5
ax6
ax7
by0
tRRD
Bank #0
Active
Bank #2
Bank #3
by2
by3
by4
by5
by6
by7
CZ0
CZ1
CZ2
tRRD
Precharge
Write
Active
Bank #1
by1
Write
Active
Write
Precharge
Idle
- 25 -
Publication Release Date:Dec. 24, 2007
Revision A02
W9825G6EH
11.6
Interleaved Bank Write (Burst Length = 8, Auto-precharge)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
CS
tRC
RAS
tRP
tRAS
tRAS
CAS
WE
BS0
BS1
tRCD
tRCD
A10
A0-A9
A11,A12
RBb
RAa
RAa
tRCD
CAx
RAb
CBy
RBb
CAz
RAc
DQM
CKE
DQ
ax0
ax1
ax4
ax5
ax6
ax7
by0
tRRD
Bank #0 Active
Bank #2
Bank #3
Idle
by2
by3
by4
by5
by6
by7
CZ0
CZ1
CZ2
tRRD
Active
AP*
Write
Active
Bank #1
by1
Write
AP*
Write
* AP is the internal precharge start timing
- 26 -
Publication Release Date: Dec. 24, 2007
Revision A02
W9825G6EH
11.7
Page Mode Read (Burst Length = 4, CAS Latency = 3)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
tCCD
tCCD
tCCD
CS
tRAS
tRP
tRAS
tRP
RAS
CAS
WE
BS0
BS1
tRCD
A10
RAa
A0-A9,
A11,A12
RAa
tRCD
RBb
RBb
CAI
CBx
CAy
CAm
CBz
DQM
CKE
tAC
DQ
tAC
tAC
a0
a1
a2
a3
bx0
bx1
Ay0
tAC
Ay1
Ay2
tAC
am0
am1
am2
bz0
bz1
bz2
bz3
tRRD
Bank #0 Active
Bank #2
Bank #3
Read
Active
Bank #1
Read
Read
Read
Precharge
Read
AP*
Idle
* AP is the internal precharge start timing
- 27 -
Publication Release Date:Dec. 24, 2007
Revision A02
W9825G6EH
11.8
Page Mode Read / Write (Burst Length = 8, CAS Latency = 3)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
CS
tRAS
tRP
RAS
CAS
WE
BS0
BS1
tRCD
A10
A0-A9,
A11,A12
RAa
RAa
CAx
CAy
DQM
CKE
tAC
DQ
tWR
ax0
Q Q
Bank #0
Active
ax1
ax3
ax2
Q
Q
ax5
ax4
Q
Q
Read
ay1
ay0
D
D
Write
ay2
D
ay4
ay3
D
D
Precharge
Bank #1
Bank #2
Bank #3
Idle
- 28 -
Publication Release Date: Dec. 24, 2007
Revision A02
W9825G6EH
11.9
Auto-precharge Read (Burst Length = 4, CAS Latency = 3)
CLK
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CS
tRC
tRC
RAS
tRAS
tRP
tRAS
tRP
CAS
WE
BS0
BS1
tRCD
A10
A0-A9,
A11,A12
tRCD
RAa
RAa
RAb
CAw
RAb
CAx
DQM
CKE
tAC
DQ
Bank #0
tAC
aw0
Active
Read
aw1
AP*
aw2
bx0
aw3
Active
Read
bx1
bx2
bx3
AP*
Bank #1
Bank #2
Bank #3
Idle
* AP is the internal precharge start timing
- 29 -
Publication Release Date:Dec. 24, 2007
Revision A02
W9825G6EH
11.10
Auto-precharge Write (Burst Length = 4)
CLK
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CS
tRC
tRC
RAS
tRAS
tRP
tRAS
tRP
CAS
WE
BS0
BS1
tRCD
tRCD
A10
RAa
A0-A9,
A11,A12
RAa
RAc
RAb
CAw
RAb
CAx
RAc
DQM
CKE
DQ
Bank #0
aw0
Active
Write
aw1
aw2
bx0
aw3
AP*
Active
bx1
bx2
bx3
AP*
Write
Active
Bank #1
Bank #2
Bank #3
Idle
* AP is the internal precharge start timing
- 30 -
Publication Release Date: Dec. 24, 2007
Revision A02
W9825G6EH
11.11
Auto Refresh Cycle
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
tRP
tRC
tRC
CS
RAS
CAS
WE
BS0,1
A10
A0-A9,
A11,A12
DQM
CKE
DQ
All Banks
Prechage
Auto
Refresh
Auto Refresh (Arbitrary Cycle)
- 31 -
Publication Release Date:Dec. 24, 2007
Revision A02
W9825G6EH
11.12
Self Refresh Cycle
(CLK = 100 MHz)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
CS
tRP
RAS
CAS
WE
BS0,1
A10
A0-A9,
A11,A12
DQM
tCKS
tCKS
tSB
CKE
tCKS
DQ
tXSR
Self Refresh Cycle
All Banks
Precharge
Self Refresh
Entry
No Operation / Command Inhibit
Self Refresh
Exit
- 32 -
Arbitrary Cycle
Publication Release Date: Dec. 24, 2007
Revision A02
W9825G6EH
11.13
Burst Read and Single Write (Burst Length = 4, CAS Latency = 3)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
CS
RAS
CAS
tRCD
WE
BS0
BS1
A10
RBa
A0-A9,
A11,A12
RBa
CBv
CBw
CBx
CBy
CBz
DQM
CKE
tAC
tAC
DQ
av0
Q
Bank #0 Active
Bank #1
Bank #2
Bank #3
av1
Q
av2
av3
aw0
ax0
ay0
az0
az1
az2
az3
Q
Q
D
D
D
Q
Q
Q
Q
Read
Single Write
Read
Idle
- 33 -
Publication Release Date:Dec. 24, 2007
Revision A02
W9825G6EH
11.14
Power Down Mode
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
CS
RAS
CAS
WE
BS
A10
RAa
A0-A9
A11,A12
RAa
RAa
CAa
RAa
CAx
DQM
tSB
tSB
CKE
tCKS
tCKS
ax0
Active
tCKS
tCKS
DQ
ax1
ax2
NOP Read
ax3
Precharge
NOP Active
Precharge Standby
Power Down mode
Active Standby
Power Down mode
Note: The PowerDown Mode is entered by asserting CKE "low".
All Input/Output buffers (except CKE buffers) are turned off in the Power Down mode.
When CKE goes high, command input must be No operation at next CLK rising edge.
Violating refresh requirements during power-down may result in a loss of data.
- 34 -
Publication Release Date: Dec. 24, 2007
Revision A02
W9825G6EH
11.15
Auto-precharge Timing (Read Cycle)
0
1
Read
AP
2
3
4
5
6
7
8
9
10
11
(1) CAS Latency=2
( a ) burst length = 1
Command
Act
tRP
Q0
DQ
( b ) burst length = 2
Command
Read
AP
Q0
DQ
Act
tRP
Q1
( c ) burst length = 4
Command
Read
AP
Act
tRP
DQ
Q0
Q1
Q2
Q3
( d ) burst length = 8
Command
Read
AP
Q0
DQ
Q1
Q2
Q3
Q4
Q5
Q6
Act
tRP
Q7
(2) CAS Latency=3
( a ) burst length = 1
Command
Read
AP
Act
tRP
Q0
DQ
( b ) burst length = 2
Command
Read
AP
Q0
DQ
( c ) burst length = 4
Command
Act
tRP
Read
Q1
AP
Act
tRP
Q0
DQ
( d ) burst length = 8
Command
Q1
Q2
Q3
Read
AP
Q0
DQ
Q1
Q2
Q3
Q4
Q5
Act
tRP
Q6
Q7
Note:
Read
AP
Act
represents the Read with Auto precharge command.
represents the start of internal precharging.
represents the Bank Activate command.
When the Auto precharge command is asserted, the period from Bank Activate command to
the start of internal precgarging must be at least tRAS (min).
- 35 -
Publication Release Date:Dec. 24, 2007
Revision A02
W9825G6EH
11.16
Auto-precharge Timing (Write Cycle)
0
1
2
3
4
5
6
7
8
9
10
11
12
(1) CAS Latency = 2
(a) burst length = 1
Command
Write
AP
tWR
DQ
Act
tRP
D0
(b) burst length = 2
Command
Write
AP
Act
tWR
DQ
D0
tRP
D1
(c) burst length = 4
Command
AP
Write
DQ
D0
D1
D2
Act
tRP
tWR
D3
(d) burst length = 8
Command
Write
AP
tWR
DQ
D0
D1
D2
D3
D4
D5
D6
Act
tRP
D7
(2) CAS Latency = 3
(a) burst length = 1
Command
Write
AP
Act
tWR
DQ
(b) burst length = 2
Command
tRP
D0
Write
AP
Act
tWR
DQ
D0
tRP
D1
(c) burst length = 4
Command
Write
AP
Act
tWR
DQ
D0
D1
D2
tRP
D3
(d) burst length = 8
Command
Write
AP
tWR
DQ
D0
D1
D2
D3
D4
D5
- 36 -
D6
Act
tRP
D7
Publication Release Date: Dec. 24, 2007
Revision A02
W9825G6EH
11.17
Timing Chart of Read to Write Cycle
In the case of Burst Length = 4
1
0
2
3
4
5
6
D1
D2
D3
D0
D1
D2
D1
D2
D3
D1
D2
7
8
9
10
9
10
11
(1) CAS Latency=2
Read
( a ) Command
Write
DQM
DQ
D0
Read
( b ) Command
Write
DQM
DQ
(2) CAS Latency=3
Read
( a ) Command
D3
Write
DQM
D0
DQ
Read
( b ) Command
Write
DQM
D0
DQ
D3
Note: The Output data must be masked by DQM to avoid I/O conflict.
11.18 Timing Chart of Write to Read Cycle
In the case of Burst Length=4
0
1
2
3
4
5
6
7
8
Q0
Q1
Q2
Q3
Q0
Q1
Q2
Q3
Q0
Q1
Q2
Q3
Q0
Q1
Q2
11
(1) CAS Latency=2
( a ) Command
Write Read
DQM
DQ
( b ) Command
D0
Read
Write
DQM
DQ
(2) CAS Latency=3
( a ) Command
D0
D1
Write Read
DQM
DQ
( b ) Command
D0
Write
Read
DQM
DQ
D0
D1
- 37 -
Q3
Publication Release Date:Dec. 24, 2007
Revision A02
W9825G6EH
11.19
Timing Chart of Burst Stop Cycle (Burst Stop Command)
0
1
2
3
4
5
6
7
8
9
10
11
(1) Read cycle
( a ) CAS latency =2
Command
Read
BST
Q0
DQ
Q1
Q2
Q0
Q1
Q4
Q3
( b )CAS latency = 3
Command
Read
BST
DQ
Q2
Q3
Q4
(2) Write cycle
Command
Write
DQ
BST
Q0
Q1
Q2
Note:
Q3
BST
Q4
represents the Burst stop command
11.20 Timing Chart of Burst Stop Cycle (Precharge Command)
0
1
2
3
4
5
6
7
8
9
10
11
(1) Read cycle
(a) CAS latency =2
Command
Read
PRCG
DQ
(b) CAS latency =3
Command
Q0
Q1
Q2
Read
Q3
Q4
PRCG
DQ
Q0
Q1
Q2
Q3
Q4
(2) Write cycle
(a) CAS latency =2
Command
PRCG
Write
tWR
DQM
DQ
(b) CAS latency =3
Command
Q0
Q1
Q2
Q3
Q4
PRCG
Write
tWR
DQM
DQ
Q0
Q1
Q2
Q3
Q4
- 38 -
Publication Release Date: Dec. 24, 2007
Revision A02
W9825G6EH
11.21
CKE/DQM Input Timing (Write Cycle)
CLK cycle No.
1
2
3
D1
D2
D3
4
5
6
7
External
CLK
Internal
CKE
DQM
DQ
D5
D6
DQM MASK
CKE MASK
(1)
CLK cycle No.
1
2
3
D1
D2
D3
4
5
6
7
External
CLK
Internal
CKE
DQM
DQ
D5
DQM MASK
D6
CKE MASK
(2)
CLK cycle No.
1
2
3
D1
D2
D3
4
5
6
7
External
CLK
Internal
CKE
DQM
DQ
D4
D5
D6
CKE MASK
(3)
- 39 -
Publication Release Date:Dec. 24, 2007
Revision A02
W9825G6EH
11.22
CKE/DQM Input Timing (Read Cycle)
CLK cycle No.
1
2
3
4
Q1
Q2
Q3
Q4
6
5
7
External
CLK
Internal
CKE
DQM
DQ
Q6
Open
Open
(1)
CLK cycle No.
1
2
3
Q1
Q2
Q3
4
5
6
7
External
CLK
Internal
CKE
DQM
DQ
Q4
Q6
Open
(2)
CLK cycle No.
1
2
Q1
Q2
3
4
5
6
7
Q4
Q5
Q6
External
CLK
Internal
CKE
DQM
DQ
Q3
(3)
- 40 -
Publication Release Date: Dec. 24, 2007
Revision A02
W9825G6EH
12. PACKAGE SPECIFICATION
12.1 54L TSOP II - 400 mil
54
28
HE
E
1
27
e
b
C
D
L
A2
ZD
A1
Y
A
L1
SEATING PLANE
Controlling Dimension: Millimeters
SYM.
DIMENSION
(MM)
MIN.
NOM.
A
A1
A2
b
0.05
0.10
DIMENSION
(INCH)
MAX.
1.20
0.15
MIN.
0.002
0.24
0.32
0.004
MAX.
0.047
0.006
0.039
1.00
c
NOM.
0.40
0.009
0.15
0.012
0.006
0.016
D
22.12
22.22
22.62
0.871
0.875
0.905
E
10.06
10.16
10.26
0.396
0.400
0.404
HE
e
11.56
11.76
11.96
0.455
0.463
0.471
L
0.40
L1
0.80
0.50
0.60
0.016
0.80
0.020
0.024
0.032
0.004
0.10
Y
ZD
0.0315
0.028
0.71
- 41 -
Publication Release Date:Dec. 24, 2007
Revision A02
W9825G6EH
13. REVISION HISTORY
VERSION
P00
DATE
Jul. 17, 2007
PAGE
All
P01
Aug. 01, 2007
3, 13, 14,
15
P02
Sep. 12, 2007
15, 16, 17
P03
Sep. 17, 2007
14
A01
Dec. 12, 2007
A02
Dec. 24, 2007
All
3, 4, 13, 14,
15
DESCRIPTION
Create preliminary data sheet
1. Modify -6 grade AC timing specification tIH min
from 1.0nS to 0.8nS.
2. Modify -6/-6I grade AC timing specification tCH and
tCL from 2.5nS to 2nS.
3. Add -6C grade. (tIH min is 0.7nS)
4. Remove -6E/75E grade.
1. AC Characteristics tOH change:
-6/-6C/-6I grades Before : 3nS --> After : 2nS
-75/75I grades Before : 3nS --> After : 2.5nS
2. Revise transient time tT AC test condition and
calculate formula for compensation consideration in
Notes 6, 9 of AC Characteristics and Operating
Condition
DC Characteristics ICC2S change:
-6/-6C/-6I grades Before : 10mA --> After : 15mA
-75/75I grades Before : 10mA --> After : 15mA
Formally data sheet
Remove -6I/75I speed grades
Important Notice
Winbond products are not designed, intended, authorized or warranted for use as components
in systems or equipment intended for surgical implantation, atomic energy control
instruments, airplane or spaceship instruments, transportation instruments, traffic signal
instruments, combustion control instruments, or for other applications intended to support or
sustain life. Further more, Winbond products are not intended for applications wherein failure
of Winbond products could result or lead to a situation wherein personal injury, death or
severe property or environmental damage could occur.
Winbond customers using or selling these products for use in such applications do so at their
own risk and agree to fully indemnify Winbond for any damages resulting from such improper
use or sales.
- 42 -
Publication Release Date: Dec. 24, 2007
Revision A02