AOD417 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard Product AOD417 is Pb-free (meets ROHS & Sony 259 specifications). VDS (V) = -30V (V GS = -10V) ID = -25A RDS(ON) < 34mΩ (VGS = -10V) RDS(ON) < 55mΩ (VGS = -4.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G TA=25°C G Pulsed Drain Current C C Repetitive avalanche energy L=0.3mH C TC=25°C Power Dissipation B V Junction and Storage Temperature Range IAR -14 A EAR 30 mJ -60 50 W 25 5 W 3.2 TJ, TSTG °C -55 to 175 Symbol t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. A -20 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case D ±20 ID IDM PD TC=100°C TA=25°C Power Dissipation A Units V -25 TA=100°C Avalanche Current Maximum -30 RθJA RθJL Typ 16.7 40 2.5 Max 25 50 3 Units °C/W °C/W °C/W AOD417 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS ID=-250µA -1 ID(ON) On state drain current VGS=-10V, VDS=-5V -60 VGS=-10V, ID=-20A TJ=125°C VGS=-4.5V, ID=-7A gFS Forward Transconductance IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current IS VDS=-5V, ID=-20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) VGS=0V, VDS=-15V, f=1MHz µA -5 IGSS VSD Units -1 TJ=55°C Static Drain-Source On-Resistance Max V VDS=-24V, VGS=0V VGS(th) RDS(ON) Typ ±100 nA -1.9 -3 V 27 34 A 36 40 mΩ 55 mΩ -1 V -6 A 18 -0.75 S 920 pF 140 pF 90 VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-20A 6 pF 9 Ω 16.2 nC 8.2 nC Qgs Gate Source Charge 2.9 nC Qgd Gate Drain Charge 3.6 nC tD(on) Turn-On DelayTime 8 ns tr Turn-On Rise Time 30 ns tD(off) Turn-Off DelayTime 22 ns tf Turn-Off Fall Time 26 ns trr Body Diode Reverse Recovery Time IF=-20A, dI/dt=100A/µs 23 Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs 14 ns nC VGS=-10V, VDS=-15V, RL=0.75Ω, RGEN=3Ω A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation P DSM is based on R θJA (<10s) and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 0: Oct. 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD417 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 60 -10V VDS=-5V 50 -6V ID=-10mA, 20 -4.5V 15 -ID(A) -ID (A) 40 VGS=0V 30 20 10 VGS=-3.5V 125°C 5 10 0 25°C 0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 60 Normalized On-Resistance 55 50 VGS=-4.5V 40 35 VGS=-10V 30 4.5 5 850 185 90 1.6 45 4 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Figure 1: On-Region Characteristics RDS(ON) (mΩ) -40°C 0 25 1.4 VGS=-10V ID=-20A 1.2 1 VGS=-4.5V ID=-7A 0.8 0.6 20 0 5 10 15 20 -50 25 -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 80 1.0E+01 ID=-20A 1.0E+00 70 1.0E-01 1.0E-02 -IS (A) RDS(ON) (mΩ) 60 125°C 50 125°C 1.0E-03 40 -40°C 1.0E-04 30 25°C 25°C 1.0E-05 20 1.0E-06 3 4 5 6 7 8 9 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 0.0 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AOD417 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1500 VDS=-15V ID=-20A ID=-10mA, VGS=0V 1250 Capacitance (pF) -VGS (Volts) 8 6 4 Ciss 1000 2 750 500 Crss Coss 250 0 0 0 3 6 9 12 15 0 18 1000.0 10 15 20 160 RDS(ON) limited 1.0 0.1 DC 100µs Power (W) 10µs 10.0 TJ(Max)=175°C TC=25°C 0.0 0.01 0.1 25 30 850 185 90 200 100.0 ID (Amps) 5 -VDS (Volts) Figure 8: Capacitance Characteristics -Qg (nC) Figure 7: Gate-Charge Characteristics TJ(Max)=175°C TC=25°C 120 80 40 1 VDS (Volts) 10 0 0.0001 100 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=Tc+PDM.ZθJC.RθJC RθJC=3°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 100 1000 AOD417 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 100 ID=-10mA, VGS=0V 80 TA=25°C 60 40 TA=150°C 50 Power Dissipation (W) -ID(A), Peak Avalanche Current 120 20 40 30 20 10 0 0 0.000001 0.00001 0.0001 0 0.001 25 30 60 25 50 20 40 Power (W) Current rating 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note B) Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 15 10 5 850 185 90 TA=25°C 30 20 10 0 0 25 50 75 100 125 150 0 0.001 175 TCASE (°C) Figure 14: Current De-rating (Note B) 10 ZθJA Normalized Transient Thermal Resistance 50 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse 0.001 0.00001 0.0001 Ton 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. 100 1000