VTB Process Photodiodes VTB6061BH PACKAGE DIMENSIONS inch (mm) CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a “flat” window, dual lead TO-8 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response. ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40°C to 110°C -40°C to 110°C RoHS Compliant ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22) SYMBOL CHARACTERISTIC VTB6061BH TEST CONDITIONS Min. ISC TC ISC VOC TC VOC ID RSH TC RSH CJ H = 100 fc, 2850 K ISC Temperature Coefficient 2850 K .02 Open Circuit Voltage H = 100 fc, 2850 K 420 mV VOC Temperature Coefficient 2850 K -2.0 mV/°C Dark Current H = 0, VR = 2.0 V Shunt Resistance H = 0, V = 10 mV .10 GΩ RSH Temperature Coefficient H = 0, V = 10 mV -8.0 %/°C Junction Capacitance H = 0, V = 0 8.0 nF Spectral Application Range λp Spectral Response - Peak VBR Breakdown Voltage θ1/2 Angular Resp. - 50% Resp. Pt. NEP D* UNITS Max. Short Circuit Current λrange 26 Typ. 35 µA .08 2.0 330 2 720 nm nm 40 V ±55 Degrees Noise Equivalent Power 1.0 x 10 Specific Detectivity 6.1 x 10 12 (Typ.) Phone: 877-734-6786 Fax: 450-424-3413 35 nA 580 -13 (Typ.) PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 %/°C W ⁄ Hz cm Hz ⁄ W www.perkinelmer.com/opto