AP9575GI
RoHS-compliant Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
BVDSS
-60V
▼ Simple Drive Requirement
RDS(ON)
70mΩ
▼ Fast Switching Characteristic
ID
G
D
S
-16A
TO-220CFM(I)
Description
D
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220CFM isolation package is universally preferred for all
commercial-industrial through hole applications.
G
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-60
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
-16
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
-10
A
-60
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
31.25
W
Linear Derating Factor
0.25
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
4.0
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
65
℃/W
Data and specifications subject to change without notice
200515071-1/4
AP9575GI
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-60
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-10A
-
-
70
mΩ
VGS=-4.5V, ID=-8A
-
-
90
mΩ
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-10A
-
14
-
S
IDSS
Drain-Source Leakage Current (Tj=25oC)
VDS=-60V, VGS=0V
-
-
-10
uA
Drain-Source Leakage Current (Tj=150oC)
VDS=-48V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS= ±20V
-
-
±100
nA
ID=-10A
-
21
34
nC
VGS(th)
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-50V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
11
-
nC
VDS=-30V
-
10
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-10A
-
18
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
24
-
ns
tf
Fall Time
RD=3Ω
-
42
-
ns
Ciss
Input Capacitance
VGS=0V
-
1760 2800
pF
Coss
Output Capacitance
VDS=-25V
-
160
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
130
-
pF
Rg
Gate Resistance
f=1.0MHz
-
5
8
Ω
Min.
Typ.
IS=-10A, VGS=0V
-
-
-1.3
V
IS=-10A, VGS=0V,
-
46
-
ns
dI/dt=-100A/µs
-
100
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR USE IN CONSUMER APPLICATIONS. APPLICATIONS OR USE IN LIFE SUPPORT
OR OTHER SIMILAR MISSION-CRITICAL DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
2/4
AP9575GI
50
50
-10V
- 7 .0V
-5.0V
-4.5V
-ID , Drain Current (A)
40
-10V
-7.0V
-5.0V
-4.5V
T C =150 o C
40
30
20
V G = -3.0 V
-ID , Drain Current (A)
T C = 25 o C
30
20
V G = -3.0V
10
10
0
0
0
4
8
0
12
4
8
12
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
110
2.0
I D = - 10 A
V G = -10V
I D = -8 A
T C =25 ℃
Normalized RDS(ON)
1.6
RDS(ON) (mΩ )
90
70
1.2
0.8
0.4
50
2
4
6
8
-50
10
0
50
100
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
1.4
10
1.2
Normalized -VGS(th) (V)
-IS(A)
8
6
T j =150 o C
T j =25 o C
4
1.0
0.8
0.6
2
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP9575GI
f=1.0MHz
10000
V DS = - 50 V
I D = - 10 A
C iss
9
1000
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
C oss
C rss
100
3
10
0
0
10
20
30
1
40
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
100us
10
-ID (A)
1ms
10ms
100ms
1
1s
DC
o
T c =25 C
Single Pulse
Normalized Thermal Response (Rthjc)
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
Single Pulse
0.01
0
0.1
1
10
100
0.00001
0.0001
-V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
T j =25 o C
-ID , Drain Current (A)
V DS = -5V
VG
T j =150 o C
QG
20
-4.5V
QGS
QGD
10
Charge
Q
0
0
2
4
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4