VN1504/ VN1506/ VN1509 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information † BVDSS / BVDGS RDS(ON) (max) ID(ON) (min) Order Number / Package 40V 60V 90V 3.0Ω 3.0Ω 3.0Ω 2.0A 2.0A 2.0A VN1504NW VN1506NW VN1509NW Die† MIL visual screening available. Features Advanced DMOS Technology ❏ Free from secondary breakdown Thisi enhancement-mode (normally-off) transistori utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Applications ❏ Motor controls ❏ Converters ❏ Amplifiers ❏ Switches ❏ Power supply circuits ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Absolute Maximum Ratings Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature Soldering Temperature* -55°C to +150°C 300°C * Distance of 1.6 mm from case for 10 seconds. 1 VN1509 Electrical Characteristics (@25°C unless otherwise specified) Symbol Parameter Min VN1504 VN1506 VN1509 BVDSS Drain-to-Source Breakdown Voltage VGS(th) Gate Threshold Voltage ∆VGS(th) Change in VGS(th) with Temperature IGSS Gate Body Leakage IDSS Zero Gate Voltage Drain Current Typ Max 40 60 90 0.8 -3.8 ON-State Drain Current VGS = 0V, ID = 1mA 2.4 V VGS = VDS, ID = 1mA -5.5 mV/°C VGS = VDS, ID = 1mA 100 nA 1 0.5 1.0 2.0 2.5 3.0 5.0 2.5 3.0 0.70 1 Static Drain-to-Source ON-State Resistance ∆RDS(ON) Change in RDS(ON) with Temperature GFS Forward Transconductance CISS Input Capacitance 55 65 COSS Common Source Output Capacitance 20 25 CRSS Reverse Transfer Capacitance 5 8 td(ON) Turn-ON Delay Time 3 5 tr Rise Time 5 8 450 td(OFF) Turn-OFF Delay Time 6 9 tf Fall Time 5 8 VSD Diode Forward Voltage Drop 1.2 1.8 trr Reverse Recovery Time 400 Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit Doc.# DSFP - VN0109 A062306 2 VGS = ± 20V, VDS = 0V VGS = 0V, VDS = Max Rating µA A RDS(ON) 300 Conditions V 100 ID(ON) Unit Ω VGS = 0V, VDS = 0.8 Max Rating TA = 125°C VGS = 5V, VDS = 25V VGS = 10V, VDS = 25V VGS = 5V, ID = 250mA VGS = 10V, ID = 1A %/°C VGS = 10V, ID = 1A m VDS = 25V, ID = 0.5A pF VGS = 0V, VDS = 25V f = 1 MHz ns VDD = 25V ID = 1A RGEN = 25Ω V VGS = 0V, ISD =1.0A ns VGS = 0V, ISD =1.0A