ANADIGICS AWT6168

AWT6168
GSM/GPRS/Polar EDGE Power Amplifier
Module with Integrated Power Control
ADVANCED PRODUCT INFORMATION - REV 0.1
FEATURES
PRODUCT DESCRIPTION
•
Internal Reference Voltage
•
Integrated Power Control Scheme
•
InGaP HBT Technology
•
ESD Protection on All Pins (2.5 kV)
•
Low profile 1.3 mm
•
Small Package Outline 7 mm x 7 mm
•
EGPRS Capable (class 12)
GMSK MODE
•
Integrated power control (CMOS)
•
+35 dBm GSM850/900 Output Power
•
+33 dBm DCS/PCS Output Power
•
55 % GSM850/900 PAE
•
50 % DCS/PCS PAE
•
Power control range > 50 dB
EDGE MODE
•
+30.5 dBm GSM850/900 Output Power
•
+29.5 dBm DCS/PCS Output Power
•
25 % GSM850/900 PAE
•
25 % DCS/PCS PAE
This power amplifier module supports dual, tri and
quad band applications for GMSK and 8-PSK modulation schemes using a polar architecture. There are
two amplifier chains, one to support GSM850/900
bands, the other for DCS/PCS bands.
The module includes an internal reference voltage
and integrated power control scheme for use in both
GMSK and 8-PSK operation. This facilitates fast and
easy production calibration and reduces the number of external components required to complete a
power control function. The amplifier’s power control range is typically 55 dB, with the output power set
by applying an analog voltage to VRAMP.
All of the RF ports for this device are internally
matched to 50 Ω . Internal DC blocks are provided at
the RF inputs.
APPLICATIONS
•
GSM850/GSM900/DCS/PCS Handsets
•
Dual/Tri/Quad Band PDA
•
GMSK and 8-PSK Polar Modulation
Schemes
DCS/PCS_IN
DCS/PCS
BS
TX_EN
DCS/PCS_OUT
Bias/Power
Control
VBATT
CEXT
VRAMP
GSM850/900_IN
GSM850/900_OUT
GSM850/900
Figure 1: Block Diagram
01/2005
AWT6168
BS
GND
1
VCC2
DCS/PCS_IN
18
17
16
DCS/PCS_OUT
2
15
GND
TX_EN
3
14
GND
VBATT
4
13
VCC_OUT
CEXT
5
12
GND
VRAMP
6
11
GND
GSM_IN
7
10
GSM_OUT
9
VCC2
GND
8
Figure 2: Pinout (X - ray Top View)
Table 1: Pin Description
PIN
1
2
NAME
DESCRIPTION
PIN
NAME
10
GSM_OUT
Band Select Logic Input
11
GND
Ground
TX Enable Logic Input
12
GND
Ground
DCS/PCS_IN DCS/PCS RF Input
DESCRIPTION
GSM850/900 RF Output
2
BS
3
TX_EN
4
VBATT
Battery Supply
Connection
13
VCC_OUT
5
C EXT
Bypass
14
GND
Ground
6
VRAMP
Analog Signal used to
control the output power
15
GND
Ground
7
GSM_IN
GSM850/900 RF Input
16
8
VCC2
VCC Control Input for
GSM850/900
Pre-amplifier
17
GND
Ground
9
GND
Ground
18
VCC2
VCC Control Input for
DCS/PCS
Pre-amplifier
Control Voltage Output
which must be connected
to VCC2, no decoupling
DCS/PCS_OUT DCS/PCS RF Output
ADVANCED PRODUCT INFORMATION - Rev 0.1
01/2005
AWT6168
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Maximum Ratings
PARAMETER
MIN
MAX
UNITS
Supply Voltage (VBATT)
-
+7
V
RF Input Power (RFIN)
-
11
dB m
Control Voltage (VRAMP)
-0.3
1.8
V
Storage Temperature (TSTG)
-55
150
°C
Stresses in excess of the absolute ratings may cause
permanent damage. Functional operation is not implied under
these conditions. Exposure to absolute ratings for extended
periods of time may adversely affect reliability.
Table 3: ESD Ratings
PARAMETER
METHOD
RATING
UNIT
ESD Threshold voltage (RF ports)
HBM
>2.5
kV
ESD Threshold voltage (control inputs)
HBM
>2.5
kV
Although protection circuitry has been designed into this device, proper precautions should be taken to avoid exposure to electrostatic discharge (ESD) during
Ω,
handling and mounting. Human body model HBM employed is resistance = 1500Ω
capacitance = 100pF.
ADVANCED PRODUCT INFORMATION - Rev 0.1
01/2005
3
AWT6168
Table 4: Operating Conditions
PARAMETER
MIN
TYP
MAX
UNITS
Case temperature (TC)
-20
-
85
°C
Supply voltage (VBATT)
3.0
3.5
4.8
V
-
1
5
mA
0.2
-
1.6
V
Turn on Time (TON)
-
-
1
ms
VRAMP = 0.2 V, TX_EN = LOW Y HIGH
PIN = 5 dBm
Turn Off Time (TOFF)
-
-
1
ms
VRAMP = 0.2 V, TX_EN = LOW Y HIGH
PIN = 5 dBm
Rise Time (TRISE)
-
-
1
ms
POUT = -10 dBm Y PMAX (within 0.2 dB)
Fall Time (TFALL)
-
-
1
ms
POUT = PMAX Y -10 dBm (within 0.2 dB)
VRAMP Input Capacitance
-
3
-
pF
VRAMP Input Current
-
-
10
mA
Duty Cycle
-
-
50
%
Power supply leakage current
Control Voltage Range
COMMENTS
VBATT = 4.8 V, VRAMP = 0 V,
TX_EN = LOW
No RF applied
The device may be operated safely over these conditions; however, parametric performance is guaranteed
only over the conditions defined in the electrical specifications.
Table 5: Digital Inputs
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
Logic High Voltage
VIH
1.2
-
3.0
V
Logic Low Voltage
VIL
-
-
0.5
V
Logic High Current
|IIH|
-
-
30
mA
Logic Low Current
|IIL|
-
-
30
mA
Table 6: Logic Control Table
OPERATIONAL MODE
BS
T X _E N
GSM850/900
LOW
HIGH
DCS/PCS
HIGH
HIGH
-
LOW
PA DISABLED
4
ADVANCED PRODUCT INFORMATION - Rev 0.1
01/2005
AWT6168
Table 7: Electrical Characteristics for GSM850/900 GMSK mode
Unless otherwise specified: VBATT = 3.5 V, PIN = 5 dBm, Pulse Width =1154 µs, Duty 25%,
ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH, MODE = LOW
PARAMETER
MIN
TYP
MAX
UNIT
824
880
-
849
915
MHz
3
5
8
dB m
Output Power, PMAX
34.5
35
-
dB m
Freq = 824 to 915 MHz
Degraded Output Power
32.0
32.5
-
dB m
VBATT = 3.0 V, TC = 85 °C
PIN = 3 dBm
PAE @ PMAX
-
55
-
%
Forward Isolation 1
-
-37
-
dB m
TX_EN = LOW, PIN = 8 dBm
Forward Isolation 2
-
-25
-
dB m
TX_EN = HIGH,VRAMP = 0.2V, PIN = 8 dBm
Cross Isolation
(2Fo @ DCS/PCS port)
-
-25
-
dB m
VRAMP =0.2V to VRAMP_MAX
Second Harmonic
-
-20
-
dB m
Over all output power levels
Third Harmonic
-
-30
-
dB m
Over all output power levels
Operating Frequency
( Fo )
Input Power
COMMENTS
Freq = 824 to 915 MHz
VSWR = 8:1 All Phases , POUT < 34.5 dBm
Stability
Ruggedness
RX Noise Power
Input Return Loss
-
-
-36
dB m
FOUT < 1 GHz
-
-
-30
dB m
FOUT > 1 GHz
10:1
-
-
-
-
-86
-
dB m
FTX = 849 MHz, RBW = 100 kHz
FRX = 869 to 894 MHz, POUT < 34.5 dBm
-
-80
-
dB m
FTX = 915 MHz, RBW = 100 kHz,
FRX = 925 to 935 MHz, POUT < 34.5 dBm
-
-86
-
dB m
FTX = 915 MHz, RBW = 100 kHz,
FRX = 935 to 960 MHz, POUT < 34.5 dBm
-
-
2.5:1
VSWR
All Load Phases
Over all output power levels
ADVANCED PRODUCT INFORMATION - Rev 0.1
01/2005
5
AWT6168
Table 8: Electrical Characteristics for GSM850/900 EDGE mode
µs, Duty 25% ZIN
Unless otherwise specified: VBATT = 3.5 V, PIN = 5 dBm, VRAMP = 1.6 V, Pulse Width =1154µ
= ZOUT = 50 Ω, TC = 25 °C, BS = LOW, TX_EN = HIGH, MODE = HIGH
PARAMETER
MIN
TYP
MAX
UNIT
824
880
-
849
915
MHz
PAE @ 30.5 dBm
-
25
-
%
Dynamic Range
-
55
-
dB
Gain Slope
-
-
300
dB/V
AM - PM / S21 Phase
Deviation
-
2.39
2.78
3.34
2.89
1.74
1.84
2.49
-
Cross Isolation
(2Fo @ DCS/PCS port)
-
-25
-
dB m
Second Harmonic
-
-20
-
dB m
Over all output power levels
Third Harmonic
-
-30
-
dB m
Over all output power levels
Operating Frequency
( Fo )
COMMENTS
VRAMP = 0.2 V to 1.6 V
POUT / 5 dBm
<5 dBm
+5 dBm
+10 dBm
deg/dB +15 dBm
+20 dBm
+25 dBm
+30 dBm
VSWR = 8:1 All Phases, POUT < 30.5 dBm
Stability
RX Noise Power
Input Return Loss
6
-
-
-36
dB m
FOUT < 1 GHz
-
-
-30
dB m
FOUT > 1 GHz
-
-86
-
dB m
FTX = 849 MHz, RBW = 100 kHz
FRX = 869 to 894MHz, POUT < 30.5 dBm
-
-80
-
dB m
FTX = 915 MHz, RBW = 100 kHz,
FRX = 925 to 935 MHz, POUT < 30.5 dBm
-
-86
-
dB m
FTX = 915 MHz, RBW = 100 kHz,
FRX = 935 to 960 MHz, POUT < 30.5 dBm
-
-
2.5:1
VSWR
ADVANCED PRODUCT INFORMATION - Rev 0.1
01/2005
AWT6168
Table 9: Electrical Characteristics for DCS/PCS GMSK mode
Unless otherwise specified: VBATT = 3.5 V, PIN = 5 dBm, Pulse Width =1154 µs, Duty 25%,
ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGH, MODE =LOW
PARAMETER
MIN
TYP
MAX
UNIT
Operating Frequency
1710
1850
-
1785
1910
MHz
Input Power
3
5
8
dB m
Output Power, PMAX
32
33
-
dB m
29.5
30.5
-
dB m
VBATT = 3.0 V, TC = 85 °C
PIN = 3 dBm
PAE @ PMAX
-
50
-
%
Freq = 1710 to 1910 MHz
Forward Isolation 1
-
-37
-
dB m
TX_EN = LOW, PIN = 8 dBm
Forward Isolation 2
-
-17
-
dB m
TX_EN =HIGH, VRAMP = 0.2 V,
PIN = 8 dBm
Second Harmonic
-
-20
-
dB m
Over all output power levels
Third Harmonic
-
-30
-
dB m
Over all output power levels
Degraded Output Power
COMMENTS
VSWR = 8:1 All Phases , POUT < 32dBm
Stability
Ruggedness
-
-
-36
dB m
FOUT < 1 GHz
-
-
-30
dB m
FOUT > 1 GHz
10:1
-
-
-
-
-80
-
dB m
FTX = 1785 MHz, RBW = 100 kHz,
FRX =1805 to 1880 MHz, POUT < 32 dBm
-
-80
-
dB m
FTX = 1910 MHz, RBW = 100 kHz,
FRX = 1930 to 1990 MHz, POUT < 32 dBm
-
-
2.5:1
VSWR
RX Noise Power
Input Return Loss
All Load Phases
Over all output power levels
ADVANCED PRODUCT INFORMATION - Rev 0.1
01/2005
7
AWT6168
Table 10: Electrical Characteristics for DCS/PCS EDGE mode
µs, Duty 25%,
Unless otherwise specified: VBATT = 3.5 V, PIN = 5 dBm, VRAMP = 1.6 V, Pulse Width =1154µ
Ω, TC = 25 °C , BS =HIGH, TX_EN = HIGH, MODE = HIGH
ZIN = ZOUT = 50Ω
PARAMETER
MIN
TYP
MAX
UNIT
1710
1850
-
1785
1910
MHz
PAE @ 29.5 dBm
-
25
-
%
Dynamic Range
-
50
-
dB
Gain Slope
-
-
300
dB/V
AM - PM / S21 Phase
Deviation
-
1.92
1.65
2.54
2.31
1.66
1.61
1.03
0.92
-
Second Harmonic
-
-20
-
dB m
Over all output power levels
Third Harmonic
-
-30
-
dB m
Over all output power levels
Operating Frequency
( Fo )
COMMENTS
VRAMP = 0.2 V to 1.6 V
POUT / 0 dBm
<0 dBm
0 dB m
+5 dBm
+10 dBm
deg/dB
+15 dBm
+20 dBm
+25 dBm
+28 dBm
VSWR = 8:1 All Phases, POUT < 29.5 dBm
Stability
-
-
-36
dB m
-
-
-30
dB m
FOUT > 1 GHz
-
-80
-
dB m
FTX = 1785 MHz, RBW = 100 kHz
FRX = 1805 to 1880 MHz, POUT < 29.5 dBm
-
-80
-
dB m
FTX = 1910 MHz, RBW = 100 kHz,
FRX = 1930 to 1990 MHz, POUT < 29.5 dBm
-
-
2.5:1
VSWR
RX Noise Power
Input Return Loss
8
FOUT < 1 GHz
ADVANCED PRODUCT INFORMATION - Rev 0.1
01/2005
AWT6168
APPLICATION INFORMATION
TX ENABLE
BATTERY
VOLTAGE
2
1nF ++
1nF ++
47uF ++
3
4
2.7pF **
5
22nF **
DAC OUTPUT
6
10K* 27pF*
7
GND
DCS/PCS_PIN
DCS/PCS_OUT
BS
GND
TX_EN
GND
VBAT
T
AWT6168
VCC_OUT
CEXT
GND
VRAMP
GND
GSM_IN
GSM850/900 RF INPUT
GSM_OUT
8
DCS/PCS RF OUTPUT
16
15
14
13
56pF **
12
11
10
GSM850/900 RF OUTPUT
GND
BAND SELECT
1
VCC2
DCS/PCS RF INPUT
17
VCC2
18
9
* Filtering may be required to filter noise from baseband.
** This component should be placed as close to the device pin as possible.
++ These components are recommended as good design practice for improving noise
rejection characteristics. The values specified are not critical as they may not be required in the
final application.
Figure 3: Recommended Application Circuit
ADVANCED PRODUCT INFORMATION - Rev 0.1
01/2005
9
AWT6168
PACKAGE OUTLINE
Figure 3: Package Outline
10
ADVANCED PRODUCT INFORMATION - Rev 0.1
01/2005
AWT6168
NOTES
ADVANCED PRODUCT INFORMATION - Rev 0.1
01/2005
11
AWT6168
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
E-mail: Mktg@anadigics.com
IMPORTANT NOTICE
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without
notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are
subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are
assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges
customers to verify that the information they are using is current before placing orders.
WARNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS
product in any such application without written consent is prohibited.
12
ADVANCED PRODUCT INFORMATION - Rev 0.1
01/2005