CY7C1021B CY7C10211B 1-Mbit (64K x 16) Static RAM Features Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0 through A15). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O9 through I/O16) is written into the location specified on the address pins (A0 through A15). • Temperature Ranges — Commercial: 0°C to 70°C — Industrial: –40°C to 85°C — Automotive: –40°C to 125°C Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O1 to I/O8. If Byte High Enable (BHE) is LOW, then data from memory will appear on I/O9 to I/O16. See the truth table at the back of this data sheet for a complete description of read and write modes. • High speed — tAA = 10 ns (Commercial & Industrial) — tAA = 15 ns (Automotive) • CMOS for optimum speed/power • Low active power — 825 mW (max.) • Automatic power-down when deselected • Independent control of upper and lower bits • Available in 44-pin TSOP II and 400-mil SOJ • Also available in Lead (Pb)-Free 44-pin TSOP II Functional Description[1] The CY7C1021B/10211B is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. The input/output pins (I/O1 through I/O16) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), the BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW). The CY7C1021B/10211B is available in standard 44-pin TSOP Type II and 400-mil-wide SOJ packages. Customers should use part number CY7C10211B when ordering parts with 10-ns tAA, and CY7C1021B when ordering 12- and 15-ns tAA. Logic Block Diagram 64K x 16 RAM Array 512 X 2048 SENSE AMPS A7 A6 A5 A4 A3 A2 A1 A0 ROW DECODER DATA IN DRIVERS I/O1–I/O8 I/O9–I/O16 COLUMN DECODER A8 A9 A10 A11 A12 A13 A14 A15 BHE WE CE OE BLE Note: 1. For best-practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com. Cypress Semiconductor Corporation Document #: 38-05145 Rev. *A • 3901 North First Street • San Jose, CA 95134 • 408-943-2600 Revised June 20, 2004 CY7C1021B CY7C10211B Selection Guide 7C10211B-10 7C1021B-12 7C1021B-15 10 12 15 Maximum Access Time (ns) Maximum Operating Current (mA) Maximum CMOS Standby Current (mA) Com’l / Ind’l 150 140 130 Automotive - - 150 Com’l / Ind’l 10 10 10 Automotive - - 15 0.5 0.5 0.5 L Version Pin Configurations SOJ / TSOP II Top View A4 A3 A2 A1 A0 CE I/O1 I/O2 I/O3 I/O4 VCC VSS I/O5 I/O6 I/O7 I/O8 WE A15 A14 A13 A12 NC 1 44 2 3 43 42 4 41 40 39 38 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE BHE BLE I/O16 I/O15 I/O14 I/O13 VSS VCC I/O12 I/O11 I/O10 I/O9 NC A8 A9 A10 A11 NC Pin Definitions Pin Name SOJ, TSOP–Pin Number I/O Type A0–A15 1–5,18–21, 24–27, 42–44 Input I/O1–I/O16 7–10, 13–16, 29–32, 35–38 NC 22, 23, 28 WE 17 Input/Control Write Enable Input, active LOW. When selected LOW, a Write is conducted. When deselected HIGH, a Read is conducted. CE 6 Input/Control Chip Enable Input, active LOW. When LOW, selects the chip. When HIGH, deselects the chip. BHE, BLE 39, 40 Input/Control Byte Write Select Inputs, active LOW. BLE controls I/O8–I/O1, BHE controls I/O16–I/O9. OE 41 Input/Control Output Enable, active LOW. Controls the direction of the I/O pins. When LOW, the I/O pins are allowed to behave as outputs. When deasserted HIGH, I/O pins are three-stated, and act as input data pins. VSS 12, 34 VCC 11, 33 Document #: 38-05145 Rev. *A Description Address Inputs used to select one of the address locations. Input/Output Bidirectional Data I/O lines. Used as input or output lines depending on operation. No Connect Ground No Connects. Not connected to the die. Ground for the device. Should be connected to ground of the system. Power Supply Power Supply inputs to the device. Page 2 of 10 CY7C1021B CY7C10211B Maximum Ratings Static Discharge Voltage............................................ >2001V (per MIL-STD-883, Method 3015) (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................. –65°C to +150°C Latch-Up Current ..................................................... >200 mA Operating Range Ambient Temperature with Power Applied............................................. –55°C to +125°C [2] Supply Voltage on VCC to Relative GND .... –0.5V to +7.0V DC Voltage Applied to Outputs in High Z State[2] ......................................–0.5V to VCC+0.5V DC Input Voltage[2] ...................................–0.5V to VCC+0.5V Ambient Temperature (TA)[3] VCC 0°C to +70°C 5V ± 10% Industrial –40°C to +85°C 5V ± 10% Automotive –40°C to +125°C 5V ± 10% Range Commercial Current into Outputs (LOW) .........................................20 mA Electrical Characteristics Over the Operating Range Parameter Description Test Conditions 7C10211B-10 7C1021B-12 7C1021B-15 Min. Min. Max. Max. VOH Output HIGH Voltage VCC = Min., IOH = –4.0 mA VOL Output LOW Voltage VCC = Min., IOL = 8.0 mA VIH Input HIGH Voltage 2.2 6.0 2.2 6.0 VIL Input LOW Voltage[2] −0.5 0.8 –0.5 IIX Input Load Current GND < VI < VCC Com’l / Ind’l −1 +1 Automotive - Output Leakage Current GND < VI < VCC, Output Disabled Com’l / Ind’l Automotive IOS Output Short Circuit Current[4] VCC = Max., VOUT = GND −300 ICC VCC Operating Supply Current VCC = Max., IOUT = 0 mA, f = fMAX = 1/tRC Com’l / Ind’l Automotive Automatic CE Power-Down Current—TTL Inputs IOZ ISB1 ISB2 2.4 Min. 2.4 0.4 Max. Unit 2.4 0.4 V 0.4 V 2.2 6.0 V 0.8 –0.5 0.8 V –1 +1 –1 +1 µA - - - -4 +4 µA −1 +1 –1 +1 –1 +1 µA - - - - -4 +4 µA –300 –300 mA 150 140 130 mA - - 150 mA Max. VCC, CE > VIH Com’l / Ind’l VIN > VIH or VIN < VIL, f Automotive = fMAX 40 40 40 mA - - 50 mA Automatic CE Max. VCC, CE > VCC – Com’l / Ind’l Power-Down 0.3V, VIN > VCC – 0.3V, Automotive Current—CMOS or VIN < 0.3V, f = 0 Inputs L Version 10 10 10 mA - - 15 mA 0.5 0.5 0.5 mA Thermal Resistance[5] Parameter ΘJA ΘJC Description Test Conditions Thermal Resistance Test conditions follow standard test methods and (Junction to Ambient) procedures for measuring thermal impedance, Thermal Resistance per EIA / JESD51. (Junction to Case) 44-lead SOJ 44-lead TSOP-II Unit 64.32 76.89 °C/W 31.03 14.28 °C/W Notes: 2. VIL (min.) = –2.0V and VIH(max) = VCC + 0.5V for pulse durations of less than 20 ns. 3. TA is the “Instant On” case temperature. 4. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds. 5. Tested initially and after any design or process changes that may affect these parameters. Document #: 38-05145 Rev. *A Page 3 of 10 CY7C1021B CY7C10211B Capacitance[5] Parameter Description CIN Input Capacitance COUT Output Capacitance Test Conditions TA = 25°C, f = 1 MHz, VCC = 5.0V Max. Unit 8 pF 8 pF AC Test Loads and Waveforms R 481 Ω 5V R 481 Ω 5V OUTPUT ALL INPUT PULSES 3.0V 90% OUTPUT R2 255 Ω 30 pF INCLUDING JIG AND SCOPE (a) Equivalent to: R2 255 Ω 5 pF INCLUDING JIG AND SCOPE (b) OUTPUT THÉVENIN EQUIVALENT 167 90% 10% 10% GND Rise Time: 1 V/ns Fall Time:1 V/ns 1.73V 30 pF Switching Characteristics[6] Over the Operating Range 7C10211B-10 Parameter Description Min. Max. 7C1021B-12 Min. Max. 7C1021B-15 Min. Max. Unit Read Cycle tRC Read Cycle Time tAA Address to Data Valid tOHA Data Hold from Address Change tACE CE LOW to Data Valid tDOE OE LOW to Data Valid tLZOE OE LOW to Low Z[7] tHZOE OE HIGH to High 10 10 3 15 12 3 10 15 6 0 5 ns 3 12 5 0 Z[7, 8] Z[7] 12 ns 15 ns 7 ns 0 6 ns ns 7 ns 7 ns tLZCE CE LOW to Low tHZCE CE HIGH to High Z[7, 8] tPU CE LOW to Power-Up tPD CE HIGH to Power-Down 10 12 15 ns tDBE Byte Enable to Data Valid 5 6 7 ns tLZBE Byte Enable to Low Z tHZBE Write 3 3 5 0 0 0 Byte Disable to High Z 3 6 0 0 5 ns ns 0 6 ns 7 ns Cycle[9] tWC Write Cycle Time 10 12 15 ns tSCE CE LOW to Write End 8 9 10 ns tAW Address Set-Up to Write End 7 8 10 ns tHA Address Hold from Write End 0 0 0 ns tSA Address Set-Up to Write Start 0 0 0 ns tSD Data Set-Up to Write End 5 6 8 ns tHD Data Hold from Write End 0 0 0 ns Notes: 6. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOL/IOH and 30-pF load capacitance. 7. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 8. tHZOE, tHZBE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage. 9. The internal write time of the memory is defined by the overlap of CE LOW, WE LOW and BHE / BLE LOW. CE, WE and BHE / BLE must be LOW to initiate a write, and the transition of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write. Document #: 38-05145 Rev. *A Page 4 of 10 CY7C1021B CY7C10211B Switching Characteristics[6] Over the Operating Range (continued) 7C10211B-10 Parameter Description Min. [7] 3 tLZWE WE HIGH to Low Z tHZWE WE LOW to High Z[7, 8] tBW Byte Enable to End of Write 7C1021B-12 Max. Min. Max. 3 5 7 7C1021B-15 Min. Max. Unit 7 ns 3 ns 6 8 9 ns Switching Waveforms Read Cycle No. 1 [10, 11] tRC ADDRESS tOHA DATA OUT tAA PREVIOUS DATA VALID DATA VALID Read Cycle No. 2 (OE Controlled) [11, 12] ADDRESS tRC CE tACE OE tHZOE tDOE BHE, BLE tLZOE tHZCE tDBE tLZBE DATA OUT HIGH IMPEDANCE tLZCE VCC SUPPLY CURRENT tHZBE DATA VALID HIGH IMPEDANCE tPD tPU 50% 50% IICC CC IISB SB Notes: 10. Device is continuously selected. OE, CE, BHE and/or BHE = VIL. 11. WE is HIGH for read cycle. Document #: 38-05145 Rev. *A Page 5 of 10 CY7C1021B CY7C10211B Switching Waveforms (continued) Write Cycle No. 1 (CE Controlled) [13, 14] tWC ADDRESS CE tSA tSCE tAW tHA tPWE WE t BW BHE, BLE tSD tHD DATA I/O Write Cycle No. 2 (BLE or BHE Controlled) tWC ADDRESS BHE, BLE tSA tBW tAW tHA tPWE WE tSCE CE tSD tHD DATA I/O Notes: 12. Address valid prior to or coincident with CE transition LOW. 13. Data I/O is high impedance if OE or BHE and/or BLE= VIH. 14. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state. Document #: 38-05145 Rev. *A Page 6 of 10 CY7C1021B CY7C10211B Switching Waveforms (continued) Write Cycle No. 3 (WE Controlled, LOW) tWC ADDRESS tSCE CE tAW tHA tSA tPWE WE tBW BHE, BLE tHZWE tSD tHD DATA I/O tLZWE Truth Table CE OE H X X X X High Z High Z Power-Down Standby (ISB) L L H L L Data Out Data Out Read - All bits Active (ICC) L H Data Out High Z Read - Lower bits only Active (ICC) H L High Z Data Out Read - Upper bits only Active (ICC) L L Data In Data In Write - All bits Active (ICC) L H Data In High Z Write - Lower bits only Active (ICC) H L High Z Data In Write - Upper bits only Active (ICC) L X WE L BLE BHE I/O1–I/O8 I/O9–I/O16 Mode Power L H H X X High Z High Z Selected, Outputs Disabled Active (ICC) L X X H H High Z High Z Selected, Outputs Disabled Active (ICC) Ordering Information Speed (ns) 10 12 Ordering Code Package Name Package Type Operating Range CY7C10211B-10VC V34 44-Lead (400-Mil) Molded SOJ Commercial CY7C10211B-10ZC Z44 44-Lead TSOP Type II Commercial CY7C10211BL-10ZC Z44 44-Lead TSOP Type II Commercial CY7C1021B-12VC V34 44-Lead (400-Mil) Molded SOJ Commercial CY7C1021B-12VI V34 44-Lead (400-Mil) Molded SOJ Industrial CY7C1021BL-12VC V34 44-Lead (400-Mil) Molded SOJ Commercial CY7C1021B-12ZC Z44 44-Lead TSOP Type II Commercial CY7C1021B-12ZI Z44 44-Lead TSOP Type II Industrial CY7C1021BL-12ZC Z44 44-Lead TSOP Type II Commercial Document #: 38-05145 Rev. *A Page 7 of 10 CY7C1021B CY7C10211B Ordering Information (continued) Speed (ns) 15 Package Name Ordering Code Operating Range Package Type CY7C1021B-15VC V34 44-pin (400-Mil) Molded SOJ Commercial CY7C1021B-15VI V34 44-pin (400-Mil) Molded SOJ Industrial CY7C1021BL-15VC V34 44-pin (400-Mil) Molded SOJ Commercial CY7C1021B-15VE V34 44-pin (400-Mil) Molded SOJ Automotive CY7C1021B-15ZC Z44 44-pin TSOP Type II Commercial CY7C1021B-15ZXC Z44 Lead (Pb)-Free, 44-pin TSOP Type II Commercial CY7C1021B-15ZI Z44 44-pin TSOP Type II Industrial CY7C1021BL-15ZC Z44 44-pin TSOP Type II Commercial CY7C1021B-15ZE Z44 44-pin TSOP Type II Automotive Package Diagrams 44-Lead (400-Mil) Molded SOJ V34 44 23 DIMENSIONS IN INCHES MIN. MAX. 0.395 0.405 0.435 0.445 22 1 SEATING PLANE 1.120 1.130 0.095 0.115 0.045 MAX. 0.128 0.148 0.023 0.033 0.013 0.023 Document #: 38-05145 Rev. *A 0.050 TYP. 0.082 MIN. 0.004 0.025 MIN. 0°-10° 0.365 0.375 0.007 0.013 51-85082-*B Page 8 of 10 CY7C1021B CY7C10211B Package Diagrams (continued) 44-Pin TSOP II Z44 51-85087-*A All products and company names mentioned in this document may be the trademarks of their respective holders. Document #: 38-05145 Rev. *A Page 9 of 10 © Cypress Semiconductor Corporation, 2004. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. CY7C1021B CY7C10211B Document History Page Document Title: CY7C1021B/CY7C10211B 64K x 16 Static RAM Document Number: 38-05145 REV. ECN NO. Issue Date Orig. of Change Description of Change ** 109889 09/22/01 SZV Change from Spec number: 38-00951 to 38-05145 *A 238454 See ECN RKF 1) Added Automotive Specs to Data Sheet 2) Added Pb-Free device offering in the Ordering Information Document #: 38-05145 Rev. *A Page 10 of 10