ARF1518 D ARF1518 BeO 1525-100 G RF POWER MOSFET S N - CHANNEL ENHANCEMENT MODE 250V 750W 40MHz The ARF1518 is an RF power transistor designed for very high power class C, D, and E applications in scientific, commercial, medical and industrial RF power generators and amplifiers up to 40MHz. • Specified 250 Volt, 27.12 MHz Characteristics: • Output Power = 750 Watts. • Gain = 17dB (Class C) • Efficiency > 75% • High Performance Power RF Package. • Very High Breakdown for Improved Ruggedness. • Low Thermal Resistance. • Nitride Passivated Die for Improved Reliability. MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C ARF 1518 UNIT 1000 Volts 30 Amps VGS Gate-Source Voltage ±30 Volts PD Total Device Dissipation @ TC = 25°C 1500 Watts TJ,TSTG TL -55 to 200 Operating and Storage Junction Temperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(ON) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) 1000 On State Drain Voltage 1 (ID(ON) = 15A, VGS = 10V) TYP MAX Volts .4 .6 Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C) 1000 IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±400 g fs Forward Transconductance (VDS = 25V, ID = 15A) IDSS V isolation RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute) VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 50mA) 13 UNIT 17 Ohms µA nA mhos 2500 Volts 3 5 Volts MAX UNIT Characteristic (per package unless otherwise noted) RθJC Junction to Case RθCS Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) MIN TYP 0.12 0.09 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com °C/W 050-4934 Rev A Symbol 8-2005 THERMAL CHARACTERISTICS DYNAMIC CHARACTERISTICS Symbol ARF1518 Test Conditions Characteristic MIN TYP MAX 5400 6500 VDS = 200V 300 400 f = 1 MHz 125 160 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-on Delay Time VGS = 15V 8 Rise Time VDD = 500V 5 ID = 30A @ 25°C 25 RG = 1.6 Ω 13 tr td(off) tf VGS = 0V Turn-off Delay Time Fall Time UNIT pF ns FUNCTIONAL CHARACTERISTICS Symbol GPS η ψ Characteristic Common Source Amplifier Power Gain Test Conditions MIN TYP f = 27.12 MHz 15 17 dB 70 75 % VGS = 0V Drain Efficiency VDD = 250V Pout = 750W Electrical Ruggedness VSWR 10:1 MAX UNIT No Degradation in Output Power 1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%. APT Reserves the right to change, without notice, the specifications and information contained herein. Table 1 - Typical Class AB Large Signal Impedance -- ARF1501 F (MHz) 2.0 13.5 27 40 Zin (Ω) 10.6 -j 12.2 0.5 -j 2.7 0.22 -j 2.7 0.2 +j .12 ZOL (Ω) 31 -j 4.7 15.6 -j 16 6.2 -j 12.6 3.1 -j 9.4 Zin - Gate shunted with 25Ω IDQ = 100mA ZOL - Conjugate of optimum load for 750 Watts output at Vdd = 250V Thermal Considerations and Package Mounting: 050-4934 Rev A 8-2005 The rated 1350W power dissipation is only available when the package mounting surface is at 25°C and the junction temperature is 200°C. The thermal resistance between junctions and case mounting surface is 0.12°C/W. When installed, an additional thermal impedance of 0.1°C/W between the package base and the mounting surface is typical. Insure that the mounting surface is smooth and flat. Thermal joint compound must be used to reduce the effects of small surface irregularities. The heatsink should incorporate a copper heat spreader to obtain best results. Use 4-40 or M3 screws torqued to 1.2 Nm. HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and mounting surface is beryllium oxideBeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area These devices must never be thrown away with general industrial or domestic waste. D .466 .250 G .500 .150r S ARF1518 .250 BeO .750 1.000 1525-100 1 .125d .500 2 3 1.250 1.500 4 .300 .200 .005 .040 1 2 3 4 Drain Source Source Gate ARF1518 -- 13.56 MHz Test Circuit 250V L3 C7 RF Input C9 C10 C8 L1 Output L2 C4 C5 T1 DUT C1 C2 C6 C1-C3 1nF X7R 100V smt C4 2x 8.2 nF 1kV COG C5 270pF x2 ATC 100C C7-C10 8.2 nF 1kv COG C11 390 + 27 pF ATC 100C L1 2uH - 22t #24 enam. .312" dia. L2 368 nH - 5t #12 .625" dia .5" l L3 500nH 2t on 850u .5" bead R1 2.2k 0.5W T1 10:1t transformer R1 C3 Parts placement - Not to Scale. 13.56 MHz Test Amp ARF1518 BeO 1525-100 ARF1518 T1 J2 J1 050-4934 Rev A 8-2005 RF 12-04