UNISONIC TECHNOLOGIES CO., LTD B772SS PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION 3 The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 2 FEATURES SOT-23 * High current output up to 3A * Low saturation voltage * Complement to D882SS *Pb-free plating product number: B772SSL ORDERING INFORMATION Order Number Normal Lead Free Plating B772SS-x-AE3-R B772SSL-x-AE3-R Package SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel B772SSL-x-AE3-R (1)Packing Type (1) R: Tape Reel (2)Package Type (2) AE3: SOT-23 (3)Rank (3) x: refer to Classification of hFE2 (4)Lead Plating (4) L: Lead Free Plating, Blank: Pb/Sn MARKING B72 Lead Plating www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-089,B B772SS PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta = 25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SYMBOL VCBO VCEO VEBO ICP IC IB RATINGS UNIT -40 V -30 V -5 V Pulse -7 A Collector Current -3 A DC Base Current -0.6 A Tc=25℃ 10 W Collector Dissipation PD Ta=25℃ 350 mW Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current SYMBOL BVCBO BVCEO BVEBO ICBO ICEO IEBO hFE1 DC Current Gain(Note 1) hFE2 Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) Current Gain Bandwidth Product fT Output Capacitance Cob Note 1: Pulse test: PW <300µs, Duty Cycle<2% TEST CONDITIONS IC=-100µA, IE=0 IC=-1mA, IB=0 IE=-100µA, IC=0 VCB=-30V ,IE=0 VCE=-30V ,IB=0 VEB=-3V, IC=0 VCE=-2V, IC=-20mA VCE=-2V, IC=-1A IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A VCE=-5V, IC=-0.1A VCB=-10V, IE=0,f=1MHz MIN -40 -30 -5 TYP MAX -1000 -1000 -1000 30 100 200 150 -0.3 -1.0 80 45 400 -0.5 -2.0 UNIT V V V nA nA nA V V MHz pF CLASSIFICATION OF hFE2 RANK RANGE Q 100 ~ 200 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw P 160 ~ 320 E 200 ~ 400 2 of 4 QW-R206-089.B B772SS TYPICAL CHARACTERICS Derating Curve of Safe Operating Areas Static Characteristics 150 -IB =9mA 1.2 - Ic Derating (%) -IB=8mA -IB=7mA -IB=6mA -IB=5mA 0.8 -IB =4mA 100 S/b l tio ip a ss Di -Collector Current, Ic (A) 1.6 50 im ite d nl -IB =3mA ite im 0.4 d -IB =2mA -IB =1mA 0 0 0 4 8 12 16 20 -50 0 50 100 150 200 Case Temperature, Tc (℃) -Collector-Emitter voltage (V) Power Derating Collector Output Capacitance 10 3 IE=0 f=1MHz Output Capacitance(pF) Power Dissipation(W) 12 8 4 10 10 0 10 -50 0 50 100 150 2 1 0 200 10 0 10 Case Temperature, Tc (℃) 10 -2 10 -3 Safe Operating Area 3 10 Ic (max),Pulse 1 10 Ic(max),DC m S 1m S 1m 0. 10 -1 -Collector-Base Voltage(v) Current Gain Bandwidth Product S VCE=5V 10 -Collector Current, Ic (A) Current GainBandwidth Product, fT (MHz) ■ PNP SILICON TRANSISTOR 2 IB =8mA 10 10 1 0 10 10 10 10 -2 10 -1 10 0 10 1 Collector Current, Ic (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0 -1 -2 10 0 10 1 10 2 Collector-Emitter Voltage 3 of 4 QW-R206-089.B B772SS TYPICAL CHARACTERICS(Cont.) DC Current Gain Saturation Voltage 3 10 10 4 -Saturation Voltage (mV) VCE=-2V DC Current Gain, h FE ■ PNP SILICON TRANSISTOR 2 10 1 10 0 10 0 10 1 10 2 10 3 10 4 10 -Collector Current, Ic (mA) 10 10 VBE(SAT ) 3 2 VCE(SAT ) 10 10 1 0 0 10 1 10 10 2 3 10 4 10 -Collector Current, Ic (mA) U TC assum es no responsibility for equipm ent failures that result from using products at v alues that ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UT C products described or contained herein. UT C products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R206-089.B