PHILIPS BYV34-600

BYV34-600
Dual rectifier diode ultrafast
Rev. 01 — 4 October 2007
Product data sheet
1. Product profile
1.1 General description
Ultrafast, dual common cathode, epitaxial rectifier diode in a SOT78 (TO-220AB) plastic
package.
1.2 Features
n Fast switching
n Soft recovery characteristic
n Low switching loss
n Low thermal resistance
n Low forward voltage drop
n High thermal cycling performance
1.3 Applications
n Output rectifiers in high frequency
switched-mode power supplies
n Discontinuous Current Mode (DCM)
Power Factor Correction (PFC)
1.4 Quick reference data
n VRRM ≤ 600 V
n VF ≤ 1.16 V
n IO(AV) ≤ 20 A
n trr ≤ 60 ns
2. Pinning information
Table 1.
Pinning
Pin
Description
1
anode 1
2
cathode
3
anode 2
mb
mounting base; cathode
Simplified outline
Symbol
mb
1
3
2
sym084
1 2 3
SOT78 (3-lead TO-220AB)
BYV34-600
NXP Semiconductors
Dual rectifier diode ultrafast
3. Ordering information
Table 2.
Ordering information
Type number
BYV34-600
Package
Name
Description
Version
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
SOT78
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VRRM
Conditions
Min
Max
Unit
repetitive peak reverse voltage
-
600
V
VRWM
crest working reverse voltage
-
600
V
VR
reverse voltage
square waveform; δ = 1.0;
Tmb ≤ 138 °C
-
600
V
IO(AV)
average output current
square waveform; δ = 0.5;
Tmb ≤ 107 °C; both diodes conducting
-
20
A
IFRM
repetitive peak forward current
t = 25 µs; square waveform; δ = 0.5;
Tmb ≤ 107 °C; per diode
-
20
A
IFSM
non-repetitive peak forward
current
t = 10 ms; sinusoidal waveform; per
diode
-
120
A
t = 8.3 ms; sinusoidal waveform; per
diode
-
132
A
Tstg
storage temperature
−40
+150
°C
Tj
junction temperature
-
150
°C
5. Thermal characteristics
Table 4.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance from junction to
mounting base
with heatsink compound;
per diode; see Figure 1
-
-
2.4
K/W
with heatsink compound;
both diodes conducting
-
-
1.6
K/W
-
60
-
K/W
Rth(j-a)
thermal resistance from junction to ambient in free air
BYV34-600_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 4 October 2007
2 of 9
BYV34-600
NXP Semiconductors
Dual rectifier diode ultrafast
001aag912
10
Zth(j-mb)
(K/W)
1
10−1
δ=
P
tp
T
10−2
t
tp
T
10−3
10−6
10−5
10−4
10−3
10−2
10−1
1
10
tp (s)
Fig 1. Transient thermal impedance from junction to mounting base per diode as a function of pulse width
6. Characteristics
Table 5.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF = 10 A; Tj = 150 °C; see Figure 2
-
0.92
1.16
V
IF = 20 A; see Figure 2
-
1.07
1.48
V
Static characteristics
VF
IR
forward voltage
reverse current
VR = 600 V
-
10
50
µA
VR = 600 V; Tj = 100 °C
-
0.2
0.6
mA
Dynamic characteristics
Qr
recovered charge
IF = 2 A to VR ≥ 30 V; dIF/dt = 20 A/µs;
see Figure 3
-
40
70
nC
trr
reverse recovery time
IF = 1 A to VR ≥ 30 V;
dIF/dt = 100 A/µs; see Figure 3
-
50
60
ns
IRM
peak reverse recovery
current
IF = 10 A to VR ≥ 30 V;
dIF/dt = 50 A/µs; Tj = 100 °C;
see Figure 3
-
3
5
A
VFR
forward recovery
voltage
IF = 10 A; dIF/dt = 10 A/µs;
see Figure 4
-
3.2
-
V
BYV34-600_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 4 October 2007
3 of 9
BYV34-600
NXP Semiconductors
Dual rectifier diode ultrafast
003aab485
30
IF
(A)
25
20
15
10
(1)
(2)
(3)
5
0
0
0.4
0.8
1.2
VF (V)
1.6
(1) Tj = 150 °C; typical values
(2) Tj = 150 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig 2. Forward current as a function of forward voltage
IF
IF
dlF
dt
trr
time
time
VF
10 %
Qr
VFR
100 %
VF
IR
IRM
time
001aab911
001aab912
Fig 3. Reverse recovery definitions
Fig 4. Forward recovery definitions
BYV34-600_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 4 October 2007
4 of 9
BYV34-600
NXP Semiconductors
Dual rectifier diode ultrafast
003aab483
18
Ptot
(W)
15
δ=1
003aab484
12
Ptot
(W)
10
a = 1.57
1.9
2.2
0.5
12
2.8
8
0.2
4.0
9
6
0.1
6
4
3
2
0
0
0
5
10
IF(AV) (A)
15
IF(AV) = IF(RMS) × √δ
0
6
IF(AV) (A)
9
a = form factor = IF(RMS) / IF(AV)
Fig 5. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 6. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
BYV34-600_1
Product data sheet
3
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 4 October 2007
5 of 9
BYV34-600
NXP Semiconductors
Dual rectifier diode ultrafast
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
E
SOT78
A
A1
p
q
mounting
base
D1
D
L2
L1
Q
b1
L
1
2
3
c
b
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1
c
D
D1
E
e
L
L1
L2
max.
p
q
Q
mm
4.7
4.1
1.40
1.25
0.9
0.6
1.45
1.00
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
2.54
15.0
12.8
3.30
2.79
3.0
3.8
3.5
3.0
2.7
2.6
2.2
OUTLINE
VERSION
SOT78
REFERENCES
IEC
JEDEC
JEITA
3-lead TO-220AB
SC-46
EUROPEAN
PROJECTION
ISSUE DATE
05-03-22
05-10-25
Fig 7. Package outline SOT78 (3-lead TO-220AB)
BYV34-600_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 4 October 2007
6 of 9
BYV34-600
NXP Semiconductors
Dual rectifier diode ultrafast
8. Revision history
Table 6.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BYV34-600_1
20071004
Product data sheet
-
-
BYV34-600_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 4 October 2007
7 of 9
BYV34-600
NXP Semiconductors
Dual rectifier diode ultrafast
9. Legal information
9.1
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
9.3
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
10. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
BYV34-600_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 4 October 2007
8 of 9
BYV34-600
NXP Semiconductors
Dual rectifier diode ultrafast
11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
10
11
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
General description. . . . . . . . . . . . . . . . . . . . . .
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . .
Quick reference data. . . . . . . . . . . . . . . . . . . . .
Pinning information . . . . . . . . . . . . . . . . . . . . . .
Ordering information . . . . . . . . . . . . . . . . . . . . .
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal characteristics. . . . . . . . . . . . . . . . . . .
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . .
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .
Legal information. . . . . . . . . . . . . . . . . . . . . . . .
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Contact information. . . . . . . . . . . . . . . . . . . . . .
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1
1
1
1
1
2
2
2
3
6
7
8
8
8
8
8
8
9
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 4 October 2007
Document identifier: BYV34-600_1