SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BFN36 ISSUE 4 - JANUARY 1996 ✪ FEATURES: * High VCEO and Low saturation voltage APPLICATIONS: * Suitable for video output stages in TV sets * Switching power supplies C E C COMPLEMENTARY TYPE - BFN37 PARTMARKING DETAILS - BFN36 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 250 V Collector-Emitter Voltage VCEO 250 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 500 mA Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 2 W -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 250 V IC=100µ A Collector-Emitter Breakdown Voltage V(BR)CEO 250 V IC=1mA Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µ A Collector Cut-Off Current ICBO 100 20 µA nA VCB=200V VCB=200V, Tamb=150°C Emitter Cut-Off Current IEBO 100 nA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.4 V IC=20mA, IB=2mA Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=20mA, IB=2mA Static Forward Current hFE Transfer Ratio IC=1mA, VCE=10V* IC=10mA, VCE=10V* IC=30mA, VCE=10V* 25 40 40 Transition Frequency fT 70 MHz IC=20mA, VCE=10V f=100MHz Output Capacitance Cobo 1.5 pF VCB=30V,f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see FMMTA42 datasheet. 3 - 46