BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.4A (VIN = 5V) Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over current, over voltage (active clamp) and ESD protected logic level power MOSFET intended as a general purpose switch. S D D IN Features Note: • Short circuit protection with auto restart • Over-voltage protection (active clamp) • Thermal shutdown with auto restart The tab is connected to the drain pin, and must be electrically isolated from the source pin. Connection of significant copper to the tab is recommended for best thermal performance. • Over-current protection • Input protection (ESD) • High continuous current rating • Load dump protection (actively protects load) • Logic level input Ordering information Device Reel size (inches) Tape width (mm) Quantity per reel BSP75GTA 7 12mm embossed 1,000 BSP75GTC 13 12mm embossed 4,000 Device marking BSP75G Issue 4 - May 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com BSP75G Functional block diagram D Over voltage protection dV/dt limitation IN Human body ESD protection Over current protection Logic Over temperature protection S Applications • Especially suited for loads with a high in-rush current such as lamps and motors. • All types of resistive, inductive and capacitive loads in switching applications. • C compatible power switch for 12V and 24V DC applications. • Automotive rated. • Replaces electromechanical relays and discrete circuits. • Linear mode capability - the current-limiting protection circuitry is designed to de-activate at low Vds, in order not to compromise the load current during normal operation. The design maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. Issue 4 - May 2006 © Zetex Semiconductors plc 2006 2 www.zetex.com BSP75G Absolute maximum ratings Parameter Symbol Limit Unit VDS 60 V VDS(SC) 36 V Continuous input voltage VIN -0.2 ... +10 V Peak input voltage VIN -0.2 ... +20 V Operating temperature range T j, -40 to +150 °C Storage temperature range Tstg -55 to +150 °C Power dissipation at TA =25°C(a) PD 2.5 W Continuous drain current @ VIN=10V; TA=25°C(a) ID 1.6 A Continuous drain current @ VIN=5V; TA=25°C(a) ID 1.4 A IDM 5 A Continuous source current (body diode)(a) IS 3 A Pulsed source current (body diode) IS 5 A EAS 550 mJ VLoadDump 80 V VESD 4000 V Continuous drain-source voltage Drain-source voltage for short circuit protection Pulsed drain current @ VIN=10V Unclamped single pulse inductive energy Load dump protection Electrostatic discharge (human body model) DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 40/150/56 Thermal resistance Parameter Symbol Limit Unit Junction to ambient(a) R⍜JA 50 °C/W Junction to ambient(b) R⍜JA 24 °C/W Junction to ambient(c) R⍜JA 208 °C/W NOTES: (a) For a device surface mounted on 37mm x 37mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight copper. (b) For a device surface mounted on FR4 board and measured at t<=10s. (c) For a device mounted on FR4 board with the minimum copper required for electrical connections. Issue 4 - May 2006 © Zetex Semiconductors plc 2006 3 www.zetex.com BSP75G Characteristics Issue 4 - May 2006 © Zetex Semiconductors plc 2006 4 www.zetex.com BSP75G Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Static characteristics Drain-source clamp voltage VDS(AZ) 60 70 75 V Conditions ID=10mA Off-state drain current IDSS 0.1 3 A VDS=12V, VIN=0V Off-state drain current IDSS 3 15 A VDS=32V, VIN=0V V VDS=VGS, ID=1mA Input threshold voltage (*) VIN(th) 1 2.1 Input current IIN 0.7 1.2 mA VIN=+5V Input current IIN 1.5 2.7 mA VIN=+7V Input current IIN 4 7 mA VIN=+10V RDS(on) 520 675 m⍀ VIN=+5V, ID=0.7A RDS(on) 385 550 m⍀ VIN=+10V, ID=0.7A VIN=+5V, VDS>5V VIN=+10V, VDS>5V Static drain-source on-state resistance Static drain-source on-state resistance Current limit (†) ID(LIM) 0.7 1.1 1.75 A Current limit(†) Dynamic characteristics Turn-on time (VIN to 90% ID) ID(LIM) 2 3 4 A ton 2.2 10 s Turn-off time (VIN to 90% ID) toff 13 20 s Slew rate on (70 to 50% VDD) -dVDS/dton 10 20 V/s Slew rate off (50 to 70% VDD) dVDS/dtoff 3.2 10 V/s Protection functions (‡) Required input voltage for over temperature protection Thermal overload trip temperature Thermal hysteresis Unclamped single pulse inductive energy Tj=25°C Unclamped single pulse inductive energy Tj=150°C Inverse diode Source drain voltage VPROT 4.5 TJT 150 RL=22⍀, VDD=12V, VIN=0 to +10V RL=22⍀, VDD=12V, VIN=+10V to 0V RL=22⍀, VDD=12V, VIN=0 to +10V RL=22⍀, VDD=12V, VIN=+10V to 0V V 175 °C 10 °C EAS 550 mJ ID(ISO)=0.7A, VDD=32V EAS 200 mJ ID(ISO)=0.7A, VDD=32V VSD 1 VIN=0V, -ID=1.4A NOTES: (*) Protection features may operate outside spec for VIN<4.5V. (†) The drain current is limited to a reduced value when VDS exceeds a safe level. (‡) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous, repetitive operation. Issue 4 - May 2006 © Zetex Semiconductors plc 2006 5 www.zetex.com BSP75G Characteristics Issue 4 - May 2006 © Zetex Semiconductors plc 2006 6 www.zetex.com BSP75G Intentionally left blank Issue 4 - May 2006 © Zetex Semiconductors plc 2006 7 www.zetex.com BSP75G Package outline - SOT223 Dim. Millimeters Inches Dim. Millimeters Min. Max. Inches Min. Max. Min. Max. Min. Max. A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC A1 0.02 0.10 0.0008 0.004 e1 4.60 BSC 0.181 BSC b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287 b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146 C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 - D 6.30 6.70 0.248 0.264 - - - - - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 4 - May 2006 © Zetex Semiconductors plc 2006 8 www.zetex.com