MICROSEMI UMX5601

UMX5601
ULTRA LOW MAGNETIC MOMENT PIN
DIODE FOR MRI APPLICATIONS
RoHS COMPLAINT
KEY FEATURE S
DESCRIPTION
TM
IMPORTANT:Forthemostcurrentdata,consultMICROSEMI’s website: www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Symbol
Value
 Ultra low magnetic construction
 SOGO passivated chip
 Thermally matched configuration
 RoHS compliant
1
 Low capacitance at 0 V bias
 Low conductance at 0 V bias
 Metallurgical bond
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The UMX5601 PIN diode series was designed to provide ultra low magnetic PIN
diodes for in bore surface coil applications associated with higher field strength (3T and
greater) MR scanners. These PIN diodes produce the minimum artifacts (magnetic field
distortions) available in the industry, today. The diodes have been tested in magnetic
fields of ±7 Tesla.
The UMX5601 PIN diodes have a magnetic moment at 7 T of 4E-8 (J/T).
The diodes are offered in a surface mount package. The SM package utilizes a
round end cap to mark the anode. The cathode is square. The fully passivated PIN
diode chip is full face metallurgically bonded to shortened high conductive pins for
lower thermal and electrical resistances. The PIN diodes feature low forward bias
resistance and high zero bias impedance. The UMX5601 PIN diodes are
characterized at 64, 128, and 300 MHz. The UMX5601SM meets RoHS requirements
per EU Directive 2002/95/EC.
 Fused-in-glass construction
 Non cavity design
Unit
 Available in surface mount
package.
 Compatible with automatic
insertion equipment
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100
100
100
RMS Reverse Voltage
V R (RMS)
75
V
Storage Temperature
T stg
-65 to +175
ºC
Operating Temperature Non-Repetitive Peak
T op
-65 to +150
ºC
V
1- These devices are supplied with
Silver terminations. Other terminal
finishes may be available on request.
Consult factory for details.
THERMAL CHARACTERISTICS
(UNLESS OTHERWISE SPECIFIED)
Thermal Resistance
UMX5601SM
Symbol
θ
Value
2
Unit
ºC/Watt
APPLICATIONS/BENEFITS
 High B Field (3T+) in bore
APPLICATIONS:
 Active or semi-active
(not passive)
 MR blocking circuits
 MR detuning circuits
UMX 5601
 MR disable circuits
 MR receiver protector circuits
Copyright  2005
Rev. B, 2006-12-20
Microsemi
Lowell Division
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 1
UMX5601
ULTRA LOW MAGNETIC MOMENT PIN
DIODE FOR MRI APPLICATIONS
RoHS COMPLAINT
ELECTRICAL PARAMETERS @ 25
C (unless otherwise specified)
Parameter
Conditions
Forward Voltage (Note 1)
VF
I F = 100 mA
Reverse Break Down Voltage
VBR
I R = 10 uA
Reverse Current
IR
VR = 100 V
Inductance
Ls
Magnetic moment
m
@ 7T
@ 1T
χ
ρ
@ 7T
@ 1T
Volume Susceptibility
χ
>1T to 7T
<1 T
Capacitance
CT
Parallel Resistance
Rp
Series Resistance
Rs
If = 100 mA F = 64 MHz
Lifetime
τ
If = 10 mA
Mass Susceptibility
VR = 0 V, F = 1 MHZ
VR = 50 V, F = 1 MHz
VR = 0 V, F = 64 MHz
VR = 30 V, F = 64 MHz
Min
Typ.
Max
Units
0.75
1.0
V
100
V
10
uA
900
pH
4E-8
1E-7
J/T
J/T
-3.3E-11
6.5E-10
m3/kg
m3/kg
-3.1E-7
5.9E-6
SI
SI
5
100
5
9
2.6
9
250
10
3.0
0.3
0.5
10
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Symbol
pF
kOhms
Ohms
us
ELEC TR IC ALS
Copyright  2005
Rev. B, 2006-12-20
Microsemi
Lowell Division
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 2
UMX5601
ULTRA LOW MAGNETIC MOMENT PIN
DIODE FOR MRI APPLICATIONS
RoHS COMPLAINT
MAGNETIC MOMENT VS F IELD
C - V CURVES
www.MICROSEMI.com
Ma gn etic Mo ment (J/T )
3.0E-07
2.0E-07
1.0E-07
0.0E+00
-1.0E-07
-2.0E-07
-3.0E-07
-10.0
-5.0
0.0
5.0
10.0
Field (T)
RP – PARALLEL R ESISTANCE
RS VS IF
GR APHS
Copyright  2005
Rev. B, 2006-12-20
Microsemi
Lowell Division
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 3
UMX5601
ULTRA LOW MAGNETIC MOMENT PIN
DIODE FOR MRI APPLICATIONS
RoHS COMPLAINT
VF VS IF
SM STYLE SOLDER FOOTPRINT
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NOTES:
1.
2.
These dimensions will match the terminals and provide
for additional solder fillets at the outboard ends
at least as wide as the terminals themselves,
assuming accuracy of device placement within .005
inches.
If the mounting method chosen requires use of an
adhesive separate from the solder compound, a round
(or square) spot of cement as shown should be
centrally located.
Dimensions shown are in inches
“SM” STYLE PACKAGE OUTLI NE
DIMENSIONS SHOWN ARE IN INCHES
Copyright  2005
Rev. B, 2006-12-20
Microsemi
Lowell Division
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 4
UMX5601
ULTRA LOW MAGNETIC MOMENT PIN
DIODE FOR MRI APPLICATIONS
RoHS COMPLAINT
www.MICROSEMI.com
NOTES:
N OTES
Copyright  2005
Rev. B, 2006-12-20
Microsemi
Lowell Division
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 5