PRELIMINARY CGH27015F 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride (GaN) high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX and BWA amplifier applications. The transistor is available in ceramic, metal flange package. Package Type : 440166 PN: CGH2701 5F Typical Performance 2.4-2.7 GHz Parameter (TC = 25˚C) 2.4 GHz 2.5 GHz 2.6 GHz 2.7 GHz Units Small Signal Gain 14.5 14.5 14.5 14.5 dB POUT @ 2.0 % EVM 34.0 34.0 34.0 34.0 dBm Drain Efficiency @ 2.0 % EVM 23.0 24.0 24.0 23.0 % Input Return Loss 7.0 6.0 5.0 5.0 dB Output Return Loss 5.0 6.0 7.0 7.0 dB Note: Measured in the CGH27015F-TB amplifier circuit, under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3. 2007 Rev 1.7 – May Features • 2.3 - 2.9 GHz Operation • >14.5 dB Small Signal Gain • >2.0 W POUT at 2.0 % EVM • 25 % Efficiency at 2.5 % EVM • WiMAX Fixed Access 802.16-2004 OFDM • WiMAX Mobile Access 802.16e OFDMA Subject to change without notice. www.cree.com/wireless Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Drain-Source Voltage VDSS 84 Volts Gate-to-Source Voltage VGS -10, +2 Volts Storage Temperature TSTG -55, +150 ˚C Operating Junction Temperature TJ 175 ˚C Soldering Temperature TS 245 ˚C RθJC 5.0 ˚C/W Thermal Resistance, Junction to Case 1 Note: 1 Measured for the CGH27015F at PDISS = 14W. Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.0 -2.5 -1.8 VDC VDS = 10 V, ID = 3.6 mA Gate Quiescent Voltage VGS(Q) – -2.45 – VDC VDS = 28 V, ID = 60 mA Saturated Drain Current IDS 2.4 2.7 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBR 84 100 – VDC VGS = -8 V, ID = 3.6 mA Case Operating Temperature TC -10 – +105 ˚C Screw Torque T – – 60 in-oz DC Characteristics 4 Reference 440166 Package Revision 3 RF Characteristics2,3 (TC = 25˚C, F0 = 2.5 GHz unless otherwise noted) Small Signal Gain GSS 13 14.5 - dB VDD = 28 V, IDQ = 60 mA η 20 21 – % VDD = 28 V, IDQ = 60 mA, PAVE = 2.0 W Back-Off Error Vector Magnitude EVM1 – 2.5 – % VDD = 28 V, IDQ = 60 mA, PAVE = 18 dBm Error Vector Magnitude EVM2 – 2.0 - % VDD = 28 V, IDQ = 60 mA, PAVE = 2.0 W Output Mismatch Stress VSWR - 10:1 - Y No damage at all phase angles, VDD = 28 V, IDQ = 60 mA, PAVE = 2.0 W OFDM PAVE Input Capacitance CGS – 5.00 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS – 1.32 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.43 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Drain Efficiency1 Dynamic Characteristics Notes: 1 Drain Efficiency = POUT / PDC 2 Under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3. 3 Measured in the CGH27015F-TB test fixture. 4 Measured on wafer prior to packaging. Copyright © 2005-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. CGH27015F Rev 1.7 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless Typical Performance Data Typical EVM and Efficiency of CGH27015F in Broadband Amplifier Circuit at 2.5 GHz F=2.5 GHz, 802.16-2004 OFDM, P/A=9.8 dB 5.0 25 EVM(2.5) Eff(2.5) 20 3.0 15 2.0 10 1.0 5 0.0 Efficiency (%) EVM (%) 4.0 0 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 Average Output Power (dBm) Note: Under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3. Typical Constellation Chart, Spectral Mask, and EVM of CGH27015F in Broadband Amplifier Circuit at 2.5 GHz VDD = 28 V, IDQ = 60 mA, PAVE = 2.0 W Copyright © 2005-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. CGH27015F Rev 1.7 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless Typical Performance Data 3.5 28 3.0 24 2.5 20 2.0 16 1.5 12 1.0 8 EVM (33dBm) 0.5 Efficiency (%) EVM (%) Typical EVM and Efficiency at 22dB and 33 dB vs Frequency of CGH27015F in Broadband Amplifier Circuit WiMAX EVM & Efficiency at 33 and 21 dBm vs. Frequency 4 EVM (21dBm) Efficiency (33dBm) 0.0 0 2.3 2.4 2.5 2.6 2.7 Frequency (GHz) Note: Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3. Performance of CGH27015F in Broadband Amplifier Circuit VDD = 28 V, IDQ = 60 mA, OFDM BW = 3.5 MHz Copyright © 2005-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. CGH27015F Rev 1.7 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless Product Dimensions CGH27015F (Package Type — 440166) PRELIMINARY Copyright © 2005-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. CGH27015F Rev 1.7 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless CGH27015F-TB Demonstration Amplifier Circuit Schematic CGH27015F-TB Demonstration Amplifier Circuit Outline 3-000532 REV 3 CGH27015-TB Copyright © 2005-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. CGH27015F Rev 1.7 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless CGH27015F-TB Demonstration Amplifier Circuit Bill of Materials Designator R1,R2 Description Qty RES,1/16W,0603,1%,0 OHMS 2 R4 RES,1/16W,0603,1%,100 OHMS 1 R3 RES,1/16W,0603,1%,22.6 OHMS 1 C6 CAP, 470PF, 5%,100V, 0603 1 C17 CAP, 33 UF, 20%, G CASE 1 C16 CAP, 1.0UF, 100V, 10%, X7R, 1210 1 CAP 10UF 16V TANTALUM 1 CAP, 100.0pF, +/-5%, 0603 1 C4 CAP, 15pF, +/-5%, 0603 1 C1 CAP, 1.2pF, +/-0.1pF, 0603 1 C2 CAP, 2.0pF, +/-0.1pF, 0603 1 C10,C11 CAP, 2.4pF,+/-0.1pF, 0603 2 C5,C13 CAP, 39pF, +/-5%, 0603 2 C7,C15 CAP,33000PF, 0805,100V, X7R 2 CONN SMA STR PANEL JACK RECP 1 J2 HEADER RT>PLZ.1CEN LK 2 POS 1 J1 HEADER RT>PLZ .1CEN LK 5POS 1 Q1 CGH27015F 1 C8 C14 J3,J4 CGH27015F-TB Demonstration Amplifier Circuit Copyright © 2005-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. CGH27015F Rev 1.7 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, NC 27703 www.cree.com/wireless Ryan Baker Marketing Cree, Wireless Devices 919.287.7816 Tom Dekker Sales Director Cree, Wireless Devices 919.313.5639 Copyright © 2005-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. CGH27015F Rev 1.7 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless