CHA2291 RoHS COMPLIANT 10-18GHz Low Noise, Variable Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2291 is a high gain four-stage monolithic low noise amplifier with variable gain. It is designed for a wide range of applications, from military to commercial communication systems.The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. 26 24 22 20 18 16 14 12 10 8 6 4 2 0 Main Features Frequency range: 10-18GHz 2.2dB Noise Figure. 23dB gain Gain control range: 25dB DC power consumption: 180mA @ 5V Chip size: 2.49 X 1.23 X 0.10 mm Gain (dB) NF (dB) 10 11 12 13 14 15 16 17 Frequency (GHz) Typical on wafer measurements : Gain & NF Main Characteristics Tamb. = 25°C Symbol Fop Parameter Min Typ Max Unit 18 GHz Operating frequency range 10 G Small signal gain 20 NF Noise figure 2.2 Gain control range with Vc variation 25 dB Bias current 180 mA Gctrl Id 23 dB 3 dB ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. DSCHA22917165 - 14 Jun 07 1/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 18 10-18GHz LNA VGA CHA2291 Electrical Characteristics for Broadband Operation Tamb = +25°C, V5=Vd2,3,4= 5V Symbol Fop G Parameter Min Operating frequency range 10 Small signal gain (1) 20 Typ Max Unit 18 GHz 23 dB Small signal gain flatness (1) ±1 dB Is Reverse isolation (1) 60 dB NF Noise figure with Vc=1.2V (1) 2.2 Gctrl Gain control range versus Vc P1dB Output power at 1dB compression with Vc=1.2V ∆G VSWRin 20 dB 10 dBm Input VSWR (1) DC voltage dB 25 3.0:1 VSWRout Output VSWR (1) Vd 3 2.5:1 V5= Vd2,3,4 Vc -1.5 5 [-0.7, +1.2] V V +1.3 Id1 Bias current (2) with Vc=1.2V 25 mA Id Bias current total (3) with Vc=1.2V 180 mA (1) These values are representative of on-wafer measurements that are made without bonding wires at RF ports. (2) For optimum noise figure, the bias current Id1 should be adjusted to 25mA with Vg1 voltage. (3) With Id1=25mA, adjust Vg2,3,4 voltage for a total drain current around 180mA. Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Parameter Values Unit Vd Maximum Drain bias voltage +5.2 V Id Maximum drain bias current 250 mA Vg Gate bias voltage -2.5 to +0.4 V Vc Maximum Control bias voltage +1.5 V Vdg Maximum drain to gate voltage (Vd - Vg) +5.0 V Pin Maximum input power overdrive (2) +15 dBm Tch Maximum channel temperature +175 °C Ta Operating temperature range -40 to +85 °C Storage temperature range -55 to +125 °C Tstg (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA22917165 - 14 Jun 07 2/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 10-18GHz LNA VGA CHA2291 Typical on wafer Measurements Bias Conditions: V5=Vd2,3,4=5V, Vg1 for Id1=25mA, Vg2=Vg3,4=-0.5V, Vc=+1.2V Gain & Noise Figure versus frequency In jig Measurements All these measurements include the jig losses (about 0.5dB on gain, 0.2dB on noise figure and 0.3dB on output power) Bias Conditions: V5=Vd2,3,4=5V, Vg1 for Id1=25mA, Vg2=Vg3,4=-0.5V, Vc=+1.2V Gain, Return Loss & Noise Figure versus frequency Ref. : DSCHA22917165 - 14 Jun 07 3/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 10-18GHz LNA VGA CHA2291 Gain versus Vc Gain versus Frequency and Vc Ref. : DSCHA22917165 - 14 Jun 07 4/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 10-18GHz LNA VGA CHA2291 Gain versus Output power Noise figure versus Frequency and Vc Ref. : DSCHA22917165 - 14 Jun 07 5/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 10-18GHz LNA VGA CHA2291 Id versus Vc (Id tuned to 180mA with Vc=+1.2V; Vd=5V) Ref. : DSCHA22917165 - 14 Jun 07 6/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 10-18GHz LNA VGA CHA2291 Chip Assembly and Mechanical Data To V5 DC drain supply feed To Vd2,3,4 DC drain supply feed 120pF 120pF RF OUT RF IN 120pF 120pF To Vc DC supply feed To Vg1 DC gate supply feed Note: 120pF To Vg2,3,4 DC gate supply feed Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended Bond Pad: 100 x 100 µm Bonding pad positions ( Chip thickness : 100µm. All dimensions are in micrometers ) Ref. : DSCHA22917165 - 14 Jun 07 7/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice CHA2291 Ordering Information Chip form : CHA2291-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. DSCHA22917165 - 14 Jun 07 8/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice