TOSHIBA TPCP8402

TPCP8402
TOSHIBA Field Effect Transistor
Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
TPCP8402
Portable Equipment Applications
Motor Drive Applications
DC-DC Converter Applications
Unit: mm
0.33±0.05
0.05 M A
5
•
•
•
Lead(Pb)-Free
Low drain-source ON resistance : P Channel RDS (ON) = 60 mΩ (typ.)
N Channel RDS (ON) = 38 mΩ (typ.)
High forward transfer admittance : P Channel |Yfs| = 6.0 S (typ.)
N Channel |Yfs| = 7.0 S (typ.)
Low leakage current : P Channel IDSS = −10 μA (VDS = −30 V)
N Channel IDSS = 10 μA (VDS = 30 V)
Enhancement mode
: P Channel Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1mA)
N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA)
0.475
1
4
2.8±0.1
•
•
2.4±0.1
8
B
0.65
2.9±0.1
0.05 M B
A
0.8±0.05
0.025
S
S
0.28 +0.1
-0.11
0.17±0.02
+0.13
1.12 -0.12
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
1.12 +0.13
-0.12
Symbol
Rating
Unit
1．Source1
5．Drain2
2．Gate1
6．Drain2
3．Source2
7．Drain1
8．Drain1
0.28 +0.1
-0.11
Drain-source voltage
VDSS
−30
30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
−30
30
V
4．Gate2
Gate-source voltage
V
JEDEC
―
A
JEITA
―
VGSS
±20
±20
DC
(Note 1)
ID
−3.4
4.2
Pulse
(Note 1)
IDP
−13.6
16.8
PD (1)
1.48
1.48
PD (2)
1.23
1.23
PD (1)
0.58
0.58
PD (2)
0.36
0.36
Single pulse avalanche energy
(Note 4)
EAS
0.75
2.86
mJ
Avalanche current
IAR
−1.7
2.1
A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
EAR
Drain
current
Drain power Single-device operation
(Note 3a)
dissipation
(t = 5 s)
Single-device value at
(Note 2a) dual operation (Note 3b)
Drain power Single-device operation
(Note 3a)
dissipation
(t = 5 s)
Single-device value at
(Note 2b) dual operation (Note 3b)
TOSHIBA
2-3V1G
Weight: 0.017 g (typ.)
W
0.12
Circuit Configuration
8
7
6
5
1
2
3
4
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Marking (Note 6)
Note: For Notes 1 to 6, refer to the next page.
8
7
6
5
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
8402
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
＊
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
1
estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with caution.
1
2
3
4
Lot No.
2006-11-13
TPCP8402
Thermal Characteristics
Characteristics
Single-device operation
Thermal resistance,
(Note 3a)
channel to ambient
(t = 5 s)
(Note 2a) Single-device value at
dual operation (Note 3b)
Single-device operation
Thermal resistance,
(Note 3a)
channel to ambient
(t = 5 s)
(Note 2b) Single-device value at
dual operation (Note 3b)
Symbol
Max
Rth (ch-a) (1)
84.5
Rth (ch-a) (2)
101.6
Rth (ch-a) (1)
215.5
Rth (ch-a) (2)
347.2
Unit
°C/W
°C/W
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
25.4
25.4
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(b)
(a)
Note 3: a) The power dissipation and thermal resistance values shown are for a single device.
(During single-device operation, power is only applied to one device.)
b) The power dissipation and thermal resistance values shown are for a single device.
(During dual operation, power is evenly applied to both devices.)
Note 4: P Channel: VDD = −24 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = −1.7 A
N Channel: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 2.1 A
Note 5: Repetitive rating: pulse width limited by maximum channel temperature
Note 6: ● on the lower left of the marking indicates Pin 1.
※ Weekly code (3 digits):
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
2
2006-11-13
TPCP8402
P-ch
Electrical Characteristics (Ta = 25°C)
IGSS
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
⎯
⎯
±10
μA
μA
⎯
⎯
10
−30
⎯
⎯
V (BR) DSX
ID = −10 mA, VGS = 20 V
−15
⎯
⎯
Vth
VDS = −10 V, ID = −1 mA
−0.8
⎯
−2.0
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
tr
VGS = −4.5 V, ID = −1.7 A
⎯
80
105
VGS = −10 V, ID = −1.7 A
⎯
60
72
VDS = −10 V, ID = −1.7 A
3.0
6.0
⎯
⎯
600
⎯
⎯
60
⎯
⎯
70
⎯
⎯
5.3
⎯
⎯
12
⎯
⎯
8.4
⎯
⎯
34
⎯
⎯
14
⎯
⎯
1.4
⎯
⎯
2.7
⎯
VDS = −10 V, VGS = 0 V, f = 1 MHz
ID = −1.7 A
VOUT
0V
VGS
−10 V
ton
Switching time
Total gate charge
(gate-source plus gate-drain)
Unit
VDS = −30 V, VGS = 0 V
|Yfs|
Turn-off time
Max
ID = −10 mA, VGS = 0 V
Forward transfer admittance
Fall time
Typ.
IDSS
RDS (ON)
Turn-on time
VGS = ±16 V, VDS = 0 V
Min
V (BR) DSS
Drain-source ON resistance
Rise time
Test Condition
RL = 8.82Ω
Gate leakage current
Symbol
4.7 Ω
Characteristics
tf
toff
Qg
Gate-source charge 1
Qgs1
Gate-drain (“miller”) charge
Qgd
V
V
mΩ
S
pF
ns
VDD ∼
− −15 V
Duty <
= 1%, tw = 10 μs
VDD ∼
− −24 V, VGS = −10 V,
ID = −3.4 A
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse current
Forward voltage (diode)
Pulse (Note 1)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDRP
⎯
⎯
⎯
−13.6
A
⎯
⎯
1.2
V
VDSF
IDR = −3.4 A, VGS = 0 V
3
2006-11-13
TPCP8402
N-ch
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
⎯
⎯
±10
μA
Drain cut-off current
IDSS
VDS = 30 V, VGS = 0 V
⎯
⎯
10
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
⎯
⎯
V (BR) DSX
ID = 10 mA, VGS = −20 V
15
⎯
⎯
VDS = 10 V, ID = 1 mA
1.3
⎯
2.5
VGS = 4.5 V, ID = 2.1 A
⎯
58
77
VGS = 10 V, ID = 2.1 A
⎯
38
50
VDS = 10 V, ID = 2.1 A
3.5
7.0
⎯
⎯
470
⎯
⎯
60
⎯
⎯
80
⎯
⎯
5.2
⎯
⎯
8.3
⎯
Gate threshold voltage
Vth
Drain-source ON resistance
RDS (ON)
Forward transfer admittance
|Yfs|
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
VGS
Switching time
Fall time
0V
ton
4.7 Ω
Turn-on time
ID = 2.1 A
VOUT
10 V
RL = 7.14Ω
Drain-source breakdown
voltage
tf
V
V
mΩ
S
pF
ns
⎯
4.0
⎯
⎯
22
⎯
⎯
10
⎯
⎯
1.7
⎯
⎯
2.4
⎯
VDD ∼
− 15 V
Turn-off time
Total gate charge
(gate-source plus gate-drain)
toff
Duty <
= 1%, tw = 10 μs
Qg
Gate-source charge 1
Qgs1
Gate-drain (“miller”) charge
Qgd
VDD ≈ 24 V, VGS = 10 V, ID = 6 A
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse current
Forward voltage (diode)
Pulse (Note 1)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDRP
⎯
⎯
⎯
16.8
A
⎯
⎯
−1.2
V
VDSF
IDR = 4.2 A, VGS = 0 V
4
2006-11-13
TPCP8402
P-ch
ID – VDS
ID – VDS
-3.5
-10
-4
-3.0
ID
-2.8
-3
-2.7
-2.6
-2
-2.5
-1
VGS = -2.3
-0.4
-0.2
-4.5
-6
-6
-2.8
-0.6
Drain−source voltage
-0.8
VDS
-2.7
-4
-2.6
-2.5
-2
VGS = -2.3 V
0
0
-1.0
0
(V)
-2
-1
ID – VGS
VDS (V)
Pulse test
-6
Drain−source voltage
ID
(A)
VDS
(V)
VDS – VGS
VDS = -10 V
Drain current
-5
-4
-2.0
Common source
-4
-2
Ta = −55°C
100
0
25
-2
-1
-3
VGS
Common source
Ta= 25℃
-1.6
Pulse test
-1.2
-0.8
-1.6
-0.4
ID = -3.2A
-0.8
0
-5
-4
Gate−source voltage
0
(V)
-4
-2
VGS
-10
(V)
RDS (ON) – ID
1000
Common source
VDS = -10 V
Ta = 25°C
Drain−source ON resistance
RDS (ON) (mΩ)
Common source
Pulse test
Ta = −55°C
10
100
25
1
-0.1
-8
-6
Gate−source voltage
⎪Yfs⎪ – ID
100
Forward transfer admittance
⎪Yfs⎪ (S)
-3
Drain−source voltage
-8
0
Common source
Ta = 25°C
Pulse test
-3.5
-8
-4.5
0
-10
-3.0
Drain current
Drain current
ID
(A)
-6
-10
Common source
Ta = 25°C
Pulse test
(A)
-5
-0.3
-1
Drain current
-3
ID
Pulse test
100
-10
10
0.1
-10
(A)
5
VGS = -4.5 V
-1
Drain current
ID
(A)
-10
2006-11-13
TPCP8402
P-ch
RDS (ON) – Ta
IDR – VDS
10
VGS = -4.5V
ID = -0.8A, -1.5A, -4.5A
VGS = -10V
30
Common source
Pulse test
0
−80
−40
0
3
-10
40
80
Ambient temperature
VGS = 0 V
0.5
0.3
Common source
Ta = 25°C
Pulse test
120
Ta
1
0.1
0
160
0.3
(°C)
0.6
Capacitance – VDS
(V)
80
120
Vth (V)
-1.5
1000
Gate threshold voltage
Coss
Crss
100
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
-1
-3
-5
Drain−source voltage
VDS
VDS = -10 V
ID = -200μA
Pulse test
0
−80
-30 -50 -100
-10
Common source
-0.5
−40
(V)
0
Ambient temperature
1.2
0.8
(3)
0.4
0
0
(4)
25
50
75
100
125
Ambient temperature
Ta
150
175
-15
-25
(°C)
VDS
VDD = -24V
VGS
-20
-10
VDD = -6V
-15
-12
-10
-24
Common source
-5
ID = -3.2 A
-6
Ta = 25°C
Pulse test
4
8
Total gate charge
6
-12
-5
0
0
200
(V)
(V)
VDS
(2)
Drain-source voltage
(1)
(°C)
-30
Device mounted on a glass-epoxy
board (a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
operation
(Note 3b)
Device mounted on a glass-epoxy
board (b)
(Note 2b)
(3) Single-device operation
(Note 3a)
(4) Single-device value at dual
operation
(Note 3b)
t=5s
(W)
1.6
Ta
160
Dynamic input/output
characteristics
PD – Ta
2.0
40
12
Qg
VGS
10
-0.1
-1.0
Gate−source voltage
(pF)
VDS
Vth – Ta
C
Capacitance
1.5
1.2
-2.0
Ciss
PD
0.9
Drain−source voltage
10000
Drain power dissipation
-1.0
-3.0
-5.0
90
60
(A)
ID = -0.8A, -1.5A, -4.5A
IDR
120
5
Drain reverse current
Drain−source ON resistance
RDS (ON) (m Ω)
150
0
16
(nC)
2006-11-13
TPCP8402
P-ch
rth – tw
Transient thermal impedance
rth (℃/W)
1000
Single pulse
(4)
(3)
(2)
(1)
100
10
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
1
0.001
0.01
0.1
1
Pulse width
10
tw
100
1000
(s)
Safe operating area
-100
Drain current
ID
(A)
ID max (Pulse) *
-10
1 ms *
10 ms *
-1
* Single pulse
Ta = 25°C
Curves must be derated linearly
with increase in temperature.
-0.1
-0.1
-1
Drain−source voltage
VDSS
max
-10
VDS
-100
(V)
7
2006-11-13
TPCP8402
N-ch
ID – VDS
ID – VDS
10
4.5
3.8
3.5
Common source
Ta = 25°C
Pulse test
6.0
ID
3
3.2
Drain current
Drain current
ID
(A)
8.0
4
10
(A)
5
2
3.0
1
10
8
Common source
Ta = 25°C
Pulse test
8.0
6.0
4.5
3.8
6
3.5
4
3.2
2
3.0
VGS = 2.8 V
0
0
0.4
0.2
0.6
Drain−source voltage
0.8
VDS
0
1.0
VGS = 2.8 V
0
(V)
2
1
Drain−source voltage
ID – VGS
(V)
2.0
Common source
VDS (V)
Common source
VDS = 10 V
Pulse test
6
Drain−source voltage
ID
(A)
VDS
VDS – VGS
8
Drain current
5
4
3
4
2
25
100
0
Ta = −55°C
0
2
1
Gate−source voltage
VGS
Pulse test
1.2
0.8
0.4
2
ID = 4A
1
0
5
4
3
Ta= 25℃
1.6
0
(V)
2
4
Gate−source voltage
⎪Yfs⎪ – ID
8
6
VGS
10
(V)
RDS (ON) – ID
100
100
Common source
Drain−source ON resistance
RDS (ON) (mΩ)
Forward transfer admittance
⎪Yfs⎪ (S)
VDS = 10 V
Pulse test
Ta = −55°C
10
100
25
1
4.5
30
VGS = 10V
Common source
Ta = 25°C
0.1
0
0.3
1
Drain current
3
ID
10
0.1
10
(A)
Pulse test
1
Drain current
8
10
ID
(A)
2006-11-13
TPCP8402
N-ch
RDS (ON) – Ta
IDR – VDS
10
120
ID = 4A
2A
80
1A
VGS = 4.5V
60
40
(A)
100
5
IDR
10
Pulse test
3
Drain reverse current
Drain−source ON resistance
RDS (ON) (m Ω)
Common source
VGS = 10V
ID = 4, 2, 1A
20
5.0
3.0
1.0
VGS = 0 V
1
0.5
0.3
Common source
Ta = 25°C
Pulse test
0
−80
−40
0
40
80
Ambient temperature
120
Ta
0.1
0
160
-0.2
(°C)
-0.4
Capacitance – VDS
(V)
80
120
-1.2
Vth – Ta
Vth (V)
Coss
Gate threshold voltage
Crss
10
Common source
VGS = 0 V
f = 1 MHz
1
3
5
Drain−source voltage
10
30 50
VDS
(V)
1
Common source
VDS = 10 V
ID = 200μA
Pulse test
0
−80
100
−40
0
Ambient temperature
1.2
0.8
(3)
0.4
0
0
(4)
25
50
75
100
125
Ambient temperature
Ta
150
175
15
(°C)
VDS
25
VDD = 24V
VGS
20
15
12
10
24
6
12
Common source
5
ID = 4.0A
Ta = 25°C
5
Pulse test
4
8
Total gate charge
9
10
VDD = 6V
0
0
200
(V)
VDS (V)
(2)
Drain−source voltage
(1)
(°C)
30
Device mounted on a glass-epoxy
board (a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
operation
(Note 3b)
Device mounted on a glass-epoxy
board (b)
(Note 2b)
(3) Single-device operation
(Note 3a)
(4) Single-device value at dual
operation
(Note 3b)
t=5s
(W)
1.6
Ta
160
Dynamic input/output
characteristics
PD – Ta
2.0
40
12
Qg
VGS
Ta = 25°C
1
0.1
0.3
2
Gate−source voltage
(pF)
100
C
Capacitance
VDS
3
Ciss
PD
-1.0
-0.8
Drain−source voltage
1000
Drain power dissipation
-0.6
0
16
(nC)
2006-11-13
TPCP8402
N-ch
rth – tw
Transient thermal impedance
rth (℃/W)
1000
Single pulse
(4)
(3)
(2)
(1)
100
10
1
0.001
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
0.01
0.1
1
Pulse width
10
tw
100
1000
(s)
Safe operating area
100
(A)
ID max (Pulse) *
1 ms *
Drain current
ID
10
10 ms *
1
* Single pulse
Ta = 25°C
Curves must be derated linearly
with increase in temperature.
0.1
0.1
1
Drain−source voltage
VDSS
max
10
VDS
100
(V)
10
2006-11-13
TPCP8402
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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2006-11-13