TLDR440. VISHAY Vishay Semiconductors High Intensity LED, ∅ 3 mm Tinted Diffused Description This LED contains the double heterojunction (DH) GaAlAs on GaAs technology. This deep red LED can be utilized over a wide range of drive current. It can be DC or pulse driven to achieve desired light output. The device is available in a 3 mm tinted diffused package. 19220 e3 Pb Features Pb-free • Exceptional brightness • • • • • • • • Very high intensity even at low drive currents Wide viewing angle Low forward voltage 3 mm (T-1) tinted diffused package Deep red color Categorized for luminous intensity Outstanding material efficiency Lead-free device Applications Bright ambient lighting conditions Battery powered equipment Indoor and outdoor information displays Portable equipment Telecommunication indicators General use Parts Table Part Color, Luminous Intensity Angle of Half Intensity (±ϕ) Technology TLDR4400 Red,IV > 25 mcd 40 ° GaAIAs on GaAs TLDR4401 Red, IV = (25 to 50) mcd 40 ° GaAIAs on GaAs Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified TLDR440. Parameter Test condition Reverse voltage DC Forward current Tamb ≤ 60 °C Surge forward current tp ≤ 10 µs Power dissipation Tamb ≤ 60 °C Symbol Value Unit VR 6 V mA IF 50 IFSM 1 A PV 100 mW Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 55 to + 100 °C Tsd 260 °C RthJA 400 K/W Junction temperature Soldering temperature Thermal resistance junction/ ambient Document Number 83001 Rev. 1.4, 30-Aug-04 t ≤ 5 s, 2 mm from body www.vishay.com 1 TLDR440. VISHAY Vishay Semiconductors Optical and Electrical Characteristics Tamb = 25 °C, unless otherwise specified Red TLDR440. Parameter Luminous intensity Test condition IF = 20 mA 1) Part Symbol Min Typ. TLDR4400 IV 25 45 TLDR4401 IV 25 Max Unit mcd 50 mcd Luminous intensity IF = 1 mA IV 2 mcd Dominant wavelength IF = 20 mA λd 648 nm Peak wavelength IF = 20 mA λp 650 nm Spectral line half width IF = 20 mA ∆λ 20 nm Angle of half intensity IF = 20 mA ϕ ± 40 deg 1.8 Forward voltage IF = 20 mA VF Reverse current VR = 6 V IR Junction capacitance VR = 0, f = 1 MHz Cj 1) 2.2 V 10 µA 30 pF in one Packing Unit IVmin/IVmax ≤ 0.5 Typical Characteristics (Tamb = 25 °C unless otherwise specified) 60 I F - Forward Current ( mA ) PV - Power Dissipation ( mW ) 125 100 75 50 25 0 95 10904 40 30 20 10 0 0 20 40 60 80 Tamb - Ambient Temperature ( °C ) www.vishay.com 0 100 Figure 1. Power Dissipation vs. Ambient Temperature 2 50 95 10095 20 40 60 80 100 Tamb - Ambient Temperature ( ° C ) Figure 2. Forward Current vs. Ambient Temperature for InGaN Document Number 83001 Rev. 1.4, 30-Aug-04 TLDR440. VISHAY Vishay Semiconductors 2.0 I v rel - Relative Luminous Intensity 10000 1000 0.02 0.05 100 1 10 0.5 0.2 1 0.01 0.1 1 I v rel - Relative Luminous Intensity 0° 10 ° 20 ° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.4 0.2 0 0.2 0.4 0.4 0 Figure 4. Rel. Luminous Intensity vs. Angular Displacement Red 10 1 1.5 2 2.5 V F - Forward Voltage ( V ) Figure 5. Document Number 83001 Rev. 1.4, 30-Aug-04 3 60 80 100 Red 2.0 1.6 1.2 0.8 0.4 I FAV = 10 mA, const. 0 I F (mA) 10 20 50 100 200 500 1 0.5 0.2 0.1 0.05 0.02 t p /T Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle I v rel - Relative Luminous Intensity 100 40 2.4 95 10262 1 20 Tamb - Ambient Temperature (° C ) Figure 6. Rel. Luminous Intensity vs. Ambient Temperature 0.6 95 10020 I F - Forward Current ( mA ) 0.8 95 10015 Figure 3. Forward Current vs. Pulse Length 95 10014 1.2 100 10 t p - Pulse Length ( ms ) 95 10047 0.6 Red 1.6 0 0.1 I v rel - Relative Luminous Intensity IF - Forward Current ( mA ) Tamb ≤ı 65 ° C t p /T= 0.01 10 Red 1 0.1 0.01 0.1 95 10016 1 10 100 I F - Forward Current ( mA ) Figure 8. Relative Luminous Intensity vs. Forward Current www.vishay.com 3 TLDR440. VISHAY Vishay Semiconductors I v rel - Relative Luminous Intensity 1.2 Red 1.0 0.8 0.6 0.4 0.2 0 600 620 640 660 680 700 λ - Wavelength ( nm ) 95 10018 Figure 9. Relative Intensity vs. Wavelength Package Dimensions in mm 95 10951 www.vishay.com 4 Document Number 83001 Rev. 1.4, 30-Aug-04 TLDR440. VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83001 Rev. 1.4, 30-Aug-04 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1