Not Recommended for New Designs Product Datasheet September 26, 2002 TriQuint Recommends the TGA4509-EPU be used for New Designs 27 - 32 GHz 1W Power Amplifier TGA1172-SCC Key Features • • • • • • 0.25 um pHEMT Technology 16 dB Nominal Gain 29 dBm Nominal P1dB 36dBm OTOI typical at 28GHz Nominal Input/Output RL < -10 dB Bias 6 - 7V @ 630 mA Primary Applications Chip Dimensions 2.7 mm x 1.4 mm x 0.1mm • • • Product Description The TriQuint TGA1172-SCC is a three stage HPA MMIC design using TriQuint’s proven 0.25 um Power pHEMT process. The TGA1172 is designed to support a variety of millimeter wave applications including point-to-point digital radio and LMDS/LMCS and Ka band satellite ground terminals. Point-to-Point Radio Point-to-Multipoint Communications Ka Band Sat-Com Wideband Small Signal Gain 15 25 Return Loss (dB) The TGA1172 provides 29 dBm nominal output power at 1dB compression across 27-32GHz. Typical small signal gain is 16 dB with typical Input/Output Return Loss of <-10dB. 6V, 630 mA 5 -5 -5 -15 -10 15 20 6V, 630 mA 27 26 25 Frequency (GHz) 30 31 32 ) ( Output TOI (dBm) P1dB (dBm) 29 29 30 -45 40 35 Output Third Order Intercept 30 28 25 Frequency (GHz) 31 27 -35 S22 Output Power at P1dB 26 -25 S11 -20 10 32 28 5 0 -15 The TGA1172 requires minimum off-chip components. Each device is 100% DC and RF tested on-wafer to ensure performance compliance. The device is available in chip form. 15 S21 40 39 38 37 36 35 34 33 32 31 30 6V, 630 mA 26 27 28 29 30 31 32 33 Frequency (GHz) TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 Gain (dB) 10 The three stage design consists of a 600um input stage driving a 2 x 600um interstage followed by a 4 x 600um output stage. Not Recommended for New Designs Product Datasheet September 26, 2002 TriQuint Recommends the TGA4509-EPU be used for New Designs TABLE I TGA1172-SCC MAXIMUM RATINGS SYMBOL PARAMETER 4/ VALUE NOTES + POSITIVE SUPPLY VOLTAGE 8V I+ POSITIVE SUPPLY CURRENT 840 mA 1/ NEGATIVE SUPPLY CURRENT 35.2 mA 1/ PIN INPUT CONTINUOUS WAVE POWER 23 dBm PD POWER DISSIPATION 5.0 W TCH OPERATING CHANNEL TEMPERATURE 150 0C V I - TM MOUNTING TEMPERATURE (30 SECONDS) TSTG 2/ 3/ 0 320 C -65 to 150 0C STORAGE TEMPERATURE 1/ Total current for all stages. 2/ These ratings apply to each individual FET. 3/ Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 4/ These ratings represent the maximum operable values for the device. TABLE II DC SPECIFICATIONS (100%) (TA = 25 °C Nominal) NOTES SYMBOL LIMITS TEST CONDITIONS 2/ UNITS MIN MAX IDSS1 STD 60 282 mA GM1 STD 132 318 mS 1/ |VP1| STD 0.5 1.5 V 1/ |VP2-3| STD 0.5 1.5 V 1/ |VP4-7| STD 0.5 1.5 V 1/ |VBVGD1| STD 13 30 V 1/ |VBVGD2-3| STD 13 30 V 1/ |VBVGD4-7| STD 13 30 V 1/ |VBVGS1| STD 13 30 V 1/ |VBVGS2-3| STD 13 30 V 1/ |VBVGS4-7| STD 13 30 V 1/ VP, VBVGD, and VBVGS are negative. 2/ The measurement conditions are subject to change at the manufacture’s discretion (with appropriate notification to the buyer). TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 2 Not Recommended for New Designs Product Datasheet September 26, 2002 TriQuint Recommends the TGA4509-EPU be used for New Designs TGA1172-SCC TABLE IV RF SPECIFICATIONS (T A = 25°C Nominal) NOTE TEST MEASUREMENT CONDITIONS 6V @ 630mA VALUE UNITS MIN TYP SMALL-SIGNAL GAIN MAGNITUDE 27 – 32 GHz 13 16 dB POWER OUTPUT AT 1 dB GAIN COMPRESSION 28 – 32 GHz 27 29 dBm INPUT RETURN LOSS MAGNITUDE 27 – 32 GHz 10 dB OUTPUT RETURN LOSS MAGNITUDE 27 – 32 GHz 10 dB OUTPUT THIRD ORDER INTERCEPT 28 GHz 36 dBm MAX TABLE V RELIABILITY DATA PARAMETER RqJC Thermal resistance (channel to backside of carrier plate) BIAS CONDITIONS VD (V) ID (mA) 6 630 PDISS (W) 3.78 RqJC (C/W) 21.35 TCH (°C) 135.7 TM (HRS) 3.5E6 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 55°C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 3 Not Recommended for New Designs Product Datasheet September 26, 2002 TriQuint Recommends the TGA4509-EPU be used for New Designs Gain (dB) TGA1172 Average On-Wafer Small Signal S-Parmeters Sample Size = 23K devices TGA1172-SCC 26 24 22 20 18 16 14 12 10 8 6 4 2 0 27 28 29 30 31 32 Frequency (GHz) 0 Input Return Loss (dB) -5 -10 -15 -20 -25 -30 27 28 29 30 31 32 31 32 Frequency (GHz) 0 Output Return Loss (dB) -5 -10 -15 -20 -25 -30 -35 27 28 29 30 Frequency (GHz) TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 4 Not Recommended for New Designs Product Datasheet September 26, 2002 TriQuint Recommends the TGA4509-EPU be used for New Designs TGA1172-SCC TGA1172 Single tone pout and IMD3 vs Pin 25 10 20 0 15 -10 10 -20 IMD3 (dBm) Pout (dBm) Frequency = 28GHz, 6V, 630 mA SCL Power IMD3 5 -30 -40 0 -5 -4 -3 -2 -1 0 1 2 3 4 5 Pin (dBm) TGA1172 Single tone pout and IMD3 vs Pin 25 10 20 0 15 -10 10 -20 IMD3 (dBm) Pout (dBm) Frequency = 31GHz, 6V, 630 mA SCL Power IMD3 5 -30 -40 0 -5 -4 -3 -2 -1 0 1 2 3 4 5 Pin (dBm) TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 5 Not Recommended for New Designs Product Datasheet September 26, 2002 TriQuint Recommends the TGA4509-EPU be used for New Designs TGA1172-SCC Mechanical Drawing Vd2 Vd1 Vg2 RF IN 600mm Vg3 1200mm Vd1 RF OUT 2400mm Vg2 Vg1 Vd3 Vg3 Vd2 Vd3 Amplifier Topology TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 6 Not Recommended for New Designs Product Datasheet September 26, 2002 TriQuint Recommends the TGA4509-EPU be used for New Designs TGA1172-SCC Vd 0.01mF 100pF Rf in Rf out 5mil Ribbon 5mil Ribbon 100pF 0.01mF Vg Chip Assembly and Bonding Diagram GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 7 Not Recommended for New Designs Product Datasheet September 26, 2002 TriQuint Recommends the TGA4509-EPU be used for New Designs Assembly Process Notes TGA1172-SCC Reflow process assembly notes: · · · · · Use AuSn (80/20) solder with limited exposure to temperatures at or above 300§C. An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: · · · · · · · Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: · · · · · Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200§C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 8