Advance Product Information July 20, 2005 X-band Ultra Low Noise Amplifier TGA2600 Key Features • • • • • • • • Product Description Frequency Range: 6-12 GHz 0.7 dB Noise Figure 30 dB Nominal Gain 2 dBm Nominal P1dB > 12 dB Return Loss Nominal Bias 2.5V @ 17 mA 0.15-um 3MI mHEMT Technology Chip Dimensions: 2.20 x 0.99 x 0.10 mm (0.087 x 0.039 x 0.004 in) Primary Applications The TriQuint TGA2600-EPU is an Ultra Low-Noise Amplifier. This LNA operates from 7-11 GHz with a typical mid-band noise figure of 0.7 dB. • • Radar X band LNA, ECM Measured Fixtured Data The device features 30dB of gain across the band, while providing a nominal output power at P1dB gain compression of 2 dBm. Typical input and output return loss is 12 dB. Ground is provided to the circuitry through vias to the backside metallization. Bias Conditions: Vd = 2.5V, Id= 17mA 1.4 Noise Figure (dB) 1.2 The TGA2600-EPU LNA is suitable for a variety of C and X band applications such as radar receivers, electronic counter measures,decoys, jammers, and phased array systems. 0.6 0.4 0 6 7 8 9 10 11 12 13 14 15 16 Frequency (GHz) 42 36 30 24 18 12 6 0 -6 -12 -18 -24 -30 42 36 30 24 18 12 6 0 -6 -12 -18 -24 -30 Gain Output 2 4 6 Input 8 10 12 14 16 Return Loss (dB) Lead-free and RoHS compliant. 0.8 0.2 Gain (dB) The TGA2600-EPU is 100% DC and RF tested on-wafer to ensure performance compliance. 1 18 Frequency (GHz) Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice. 1 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information July 20, 2005 TGA2600-EPU TABLE I MAXIMUM RATINGS 1/ SYMBOL + PARAMETER VALUE NOTES 4.5 V 2/ V Positive Supply Voltage Vg Gate Supply Voltage Range I+ Positive Supply Current 50 mA | IG | Gate Supply Current 2 mA PIN Input Continuous Wave Power TBD 2/ PD Power Dissipation 0.23 W 2/, 3/ TCH Operating Channel Temperature 110 °C 4/, 5/ TM Mounting Temperature 175 °C TSTG Storage Temperature -2V to +1 V 2/ -65 to 110°C 1/ These ratings represent the maximum operable values for this device. 2/ Current is defined under no RF drive conditions. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 3/ When operated at this power dissipation with a base plate temperature of 70 °C, the median life is greater than 1 E+6 hours. 4/ Junction operating temperature will directly affect the device median time to failure (T M). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 5/ These ratings apply to each individual FET. 2 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information July 20, 2005 TGA2600-EPU TABLE II RF CHARACTERIZATION TABLE (TA = 25 °C, Nominal) Vd = 2.5V, Id = 17 mA SYMBOL PARAMETER TEST CONDITION NOMINAL UNITS Gain Small Signal Gain f = 7-11 GHz 30 dB IRL Input Return Loss f = 7-11 GHz 12 dB ORL Output Return Loss f = 7-11 GHz 12 dB NF Noise Figure f = 7-11 GHz 0.7 dB Output Power @ 1dB Gain Compression Output Third Order Intercept f = 7-11 GHz 2 dBm f = 7-11 GHz 14 dBm P1dB TOI TABLE III THERMAL INFORMATION* Parameter RθJC Thermal Resistance (channel to backside of carrier) Test Conditions Vd = 2.5 V ID = 16 mA Pdiss = 0.04 W TCH (oC) RTJC (qC/W) TM (HRS) 73 75 > 1 E+6 Note: Assumes epoxy mounted at 70°C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. 3 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information July 20, 2005 TGA2600-EPU Measured Fixtured Data Bias Conditions: Vd = 2.5V, Id= 17mA 1.4 Noise Figure (dB) 1.2 1 0.8 0.6 0.4 0.2 0 6 7 8 9 10 11 12 13 14 15 16 Frequency (GHz) 2 Id = 17mA Id = 10mA Id = 8mA Id = 5mA 1.8 Noise Figure (dB) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 5 6 7 8 9 10 11 12 13 Frequency (GHz) 4 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information July 20, 2005 TGA2600-EPU Measured Fixtured Data 42 36 30 24 18 12 6 0 -6 -12 -18 -24 -30 42 36 30 24 18 12 6 0 -6 -12 -18 -24 -30 Gain Output 2 4 Input 6 8 10 12 14 16 Return Loss (dB) Gain (dB) Bias Conditions: Vd = 2.5V, Id= 17mA 18 Frequency (GHz) 33 32 Gain (dB) 31 30 29 28 7 GHz 9 GHz 11 GHz 27 26 25 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 Pout (dBm) 3.5 Output P1dB (dBm) 3 2.5 2 1.5 1 0.5 0 6 7 8 9 10 11 12 Frequency (GHz) 5 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information July 20, 2005 TGA2600-EPU Measured Fixtured Data Bias Conditions: Vd = 2.5V, Id= 17mA 18 Output TOI (dBm) 17 16 15 14 13 12 11 10 6 7 8 9 10 11 12 -9 -7 Frequency (GHz) 60 58 IMD3 (dBc) 56 54 52 50 48 7 GHz 9 GHz 11 GHz 46 44 42 40 -19 -17 -15 -13 -11 Output Power Per Tone (dBm) 6 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information July 20, 2005 TGA2600-EPU Mechanical Characteristics 8QLWVPLOOLPHWHUVLQFKHV 7KLFNQHVV &KLSHGJHWRERQGSDGGLPHQVLRQVDUHVKRZQWRFHQWHURIERQGSDG &KLSVL]HWROHUDQFH *1',6%$&.6,'(2)00,& %RQGSDG5),Q[[ %RQGSDG9G[[ %RQGSDG5)2XW[[ %RQGSDG9J[[ GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 7 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information July 20, 2005 TGA2600-EPU Recommended Assembly Diagram 9G S) 5),1 5)287 S) 9J GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 8 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information July 20, 2005 TGA2600-EPU Assembly Process Notes Assembly notes: • • • Use conductive epoxy with limited exposure to temperatures at or above 175 °C. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: • • • • • Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Interconnect process assembly notes: • • • • Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Maximum stage temperature is 150 °C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 9 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com