TOSHIBA TPCS8213

TPCS8213
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ)
TPCS8213
Lithium Ion Battery Applications
Unit: mm
•
Small footprint due to a small and thin package
•
Low drain-source ON-resistance: RDS (ON) = 8.4 mΩ (typ.)
•
High forward transfer admittance: |Yfs| = 13 S (typ.)
•
Low leakage current: IDSS = 10 μA (max) (VDS = 20 V)
•
Enhancement-mode: Vth = 0.5~1.4 V (VDS = 10 V, ID = 200 μA)
•
Common drain
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
20
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
20
V
Gate-source voltage
V
Drain current
VGSS
±12
DC
(Note 1)
ID
6
Pulse
(Note 1)
IDP
24
PD (1)
1.1
Single-device
Drain power
operation (Note 3a)
dissipation
(t = 10 s)
Single-device value
(Note 2a) at dual operation
(Note 3b)
Single-device
operation (Note 3a)
Drain power
dissipation
(t = 10 s)
Single-device value
(Note 2b) at dual operation
(Note 3b)
A
W
PD (2)
0.75
PD (1)
0.6
PD (2)
0.35
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-3R1E
Weight: 0.035 g (typ.)
W
Single-pulse avalanche energy
(Note 4)
EAS
9.4
mJ
Avalanche current
IAR
6
A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
EAR
0.075
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Circuit Configuration
Note: For Notes 1 to 5, see the next page.
8
7
6
5
1
2
3
4
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
WARNING
【Handling Precaution for Power MOSFET in use of Protection Circuit for Battery Pack】
Flame-retardant resins of UL94-V0 flammability class are used in packages, however, they are not
noncombustible.Use a unit, for example PTC Thermistor, which can shut off the power supply if a
short-circuit occurs. If the power supply is not shut off on the occurring short-circuit,a large
short-circuit current will flow continuously, which may cause the device to catch fire or smoke.
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TPCS8213
Thermal Characteristics
Characteristic
Single-device operation
(Note 3a)
Thermal resistance, channel to ambient
(Note 2a) Single-device value at
(t = 10 s)
dual operation
(Note 3b)
Single-device operation
(Note 3a)
Thermal resistance, channel to ambient
(Note 2b) Single-device value at
(t = 10 s)
dual operation
(Note 3b)
Symbol
Max
Rth (ch-a) (1)
114
Rth (ch-a) (2)
167
Rth (ch-a) (1)
208
Rth (ch-a) (2)
357
Unit
°C/W
°C/W
Marking (Note 6)
Type
S8213
※
Lot No.
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2:
a)
Device mounted on a glass-epoxy board (a)
b)
Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
(a)
(b)
Note 3:
a)
The power dissipation and thermal resistance values are shown for a single device.
(During single-device operation, power is applied to one device only.)
b)
The power dissipation and thermal resistance values are shown for a single device.
(During dual operation, power is applied to both devices evenly.)
Note 4: VDD = 16 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = 6 A
Note 5: Repetitive rating: pulse width limited by max channel temperature
Note 6: The circle “○” on lower right of the marking indicates Pin 1.
* Weekly code (three digits):
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
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TPCS8213
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±10 V, VDS = 0 V
⎯
⎯
±10
μA
Drain cutoff current
IDSS
VDS = 20 V, VGS = 0 V
⎯
⎯
10
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
20
⎯
⎯
V (BR) DSX
ID = 10 mA, VGS = −12 V
8
⎯
⎯
Vth
VDS = 10 V, ID = 200 μA
0.5
⎯
1.4
VGS = 2.5 V, ID = 4.2 A
⎯
11
18
VGS = 4.0 V, ID = 4.8 A
⎯
8.7
13
VGS = 4.5 V, ID = 4.8 A
⎯
8.4
12
VDS = 10 V, ID = 3.0 A
6.5
13
⎯
⎯
3140
⎯
⎯
385
⎯
⎯
425
⎯
⎯
20
⎯
⎯
30
⎯
⎯
23
⎯
⎯
84
⎯
⎯
49
⎯
⎯
6
⎯
⎯
13
⎯
Gate threshold voltage
Drain-source ON-resistance
RDS (ON)
Forward transfer admittance
|Yfs|
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
Turn-on time
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
ton
Turn-off time
Total gate charge
(gate-source plus gate-drain)
4.7 Ω
Switching time
Fall time
tf
toff
ID = 3 A
5V
VGS
0V
VDD ∼
− 10 V
VOUT
RL = 3.3Ω
Drain-source breakdown voltage
Duty <
= 1%, tw = 10 μs
Qg
Gate-source charge 1
Qgs1
Gate-drain (“Miller”) charge
Qgd
VDD ∼
− 16 V, VGS = 5 V, ID = 6 A
V
V
mΩ
S
pF
ns
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Drain reverse current
Forward voltage (diode)
Pulse (Note 1)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDRP
⎯
⎯
⎯
24
A
⎯
⎯
−1.2
V
VDSF
IDR = 6 A, VGS = 0 V
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TPCS8213
ID – VDS
4.5
2.5
4
3.1
ID – VDS
20
2
3.1
4
4.5
COMMON SOURCE
Ta = 25°C, PULSE TEST
DRAIN CURRNET ID (A)
DRAIN CURRENT ID (A)
10
8
1.9
6
1.8
4
1.7
2
16
12
COMMON SOURCE
Ta = 25°C
2.1
PULSE TEST
2.2
2.5
2
1.9
8
1.8
4
1.7
1.6
VGS = 1.5 V
VGS = 1.5 V
0
0
0.2
0.4
0.6
0.8
0
0
1.0
DRAIN−SOURCE VOLTAGE VDS (V)
1
2
ID – VGS
5
VDS – VGS
0.5
DRAIN−SOURCE VOLTAGE VDS (V)
COMMON SOURCE
DRAIN CURRENT ID (A)
4
DRAIN−SOURCE VOLTAGE VDS (V)
12
10
3
1.6
VDS = 10 V
PULSE TEST
8
25
6
Ta = −55°C
100
4
2
0
0
1
2
Ta = 25°C
PULSE TEST
0.4
0.3
0.2
ID = 1.5 A
0.1
12
6
3
0
0
3
GATE−SOURCE VOLTAGE VGS
COMMON SOURCE
(V)
2
4
6
8
GATE−SOURCE VOLTAGE VGS
|Yfs| – ID
10
12
(V)
RDS (ON) – ID
100
100
50
25
30
Ta = −55°C
100
10
5
3
COMMON SOURCE
VDS = 10 V
DRAIN−SOURCE ON-RESISTANCE
RDS (ON) (mΩ)
FORWARD TRANSFER ADMITTANCE
|Yfs| (S)
COMMON SOURCE
Ta = 25°C
50
PULSE TEST
30
2.5
10
4
VGS = 4.5 V
5
3
PULSE TEST
1
0.1
0.3 0.5
1
3
5
10
30 50
1
0.1
100
DRAIN CURRENT ID (A)
0.3 0.5
1
3
5
10
30 50
100
DRAIN CURRENT ID (A)
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TPCS8213
RDS (ON) – Ta
IDR – VDS
100
DRAIN REVERSE CURRENT IDR (A)
DRAIN−SOURCE ON-RESISTANCE
RDS (ON) (mΩ)
30
COMMON SOURCE
PULSE TEST
ID = 6 A
20
3
1.5
2.5
10
VGS = 4, 4.5 V
0
−80
−40
0
40
80
AMBIENT TEMPERATURE
120
50
30
10
5
10
3
5
3
1
0.5
COMMON SOURCE
Ta = 25°C
PULSE TEST
0.3
0.1
0
160
−0.2
−0.4
C – VDS
−0.8
−1.0
−1.2
Vth – Ta
Vth (V)
2.0
Ciss
COMMON SOURCE
VDS = 10 V
ID = 200 μA
1.6
PULSE TEST
GATE THRESHOLD VOLTAGE
(pF)
−0.6
DRAIN−SOURCE VOLTAGE VDS (V)
Ta (°C)
10000
CAPACITANCE C
VGS = −1 V
0
1
1000
Coss
Crss
100
COMMON SOURCE
Ta = 25°C
VGS = 0 V
f = 1 MHz
10
0.1
1.2
0.8
0.4
0
−80
1
10
−40
0
40
80
AMBIENT TEMPERATURE
100
120
160
Ta (°C)
DRAIN−SOURCE VOLTAGE VDS (V)
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
1
0.8
0.6
0.4
(2)
(3)
(4)
0.2
0
0
50
100
AMBIENT TEMPERATURE
150
16
4
Ta (°C)
VDS
8
6
8
4
8
VDD = 16 V
4
4
10
2
VGS
0
0
200
VDD = 16 V
12
8
COMMON SOURCE
ID = 6 A
Ta = 25°C, PULSE TEST
(V)
20
Device mounted on a glass-epoxy
board (a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
operation
(Note 3b)
Device mounted on a glass-epoxy
board (b)
(Note 2b)
(3) Single-device operation
(Note 3a)
(4) Single-device value at dual
operation
(Note 3b)
t = 10 s
(1)
DRAIN−SOURCE VOLTAGE VDS (V)
DRAIN POWER DISSIPATION
PD (W)
1.2
10
20
30
40
50
GATE−SOURCE VOLTAGE VGS
PD – Ta
0
60
TOTAL GATE CHARGE Qg (nC)
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TPCS8213
rth − tw
TRANSIENT THERMAL IMPEDANCE rth (°C/W)
1000
(4)
Device mounted on a glass-epoxy board (a) (Note 2a)
500 (1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
300
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
(3)
(2)
(1)
100
50
30
10
5
3
1
0.5
0.3
SINGLE PULSE
0.1
0.001
0.01
0.1
1
PULSE WIDTH tw
10
100
1000
(s)
SAFE OPERATING AREA
100
Single-device value at dual
operation
(Note 3b)
DRAIN CURRENT ID (A)
ID max (PULSE) *
1 ms *
10
10 ms *
1
* Single pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
0.1
0.1
1
VDSS max
10
100
DRAIN−SOURCE VOLTAGE VDS (V)
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2007-01-16
TPCS8213
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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