TF246 Ordering number : ENA0729 SANYO Semiconductors DATA SHEET TF246 N-channel Silicon Junction FET Electret Condenser Microphone Applications Features • • • • • Ultrasmall package facilitates miniaturization in end products. Especially suited for use in electret condenser microphone for audio equipments and telephones. Excellent voltage characteristics. Excellent transient characteristics. Adoption of FBET process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Gate-to-Drain Voltage Conditions Ratings VGDO IG Gate Current Drain Current Unit --20 V 10 mA Junction Temperature ID PD Tj 150 °C Storage Temperature Tstg --55 to +150 °C Allowable Power Dissipation 1 mA 30 mW Electrical Characteristics at Ta=25°C Parameter Symbol Gate-to-Drain Breakdown Voltage Cutoff Voltage Zero-Gate Voltage Drain Current Conditions Ratings min V(BR)GDO VGS(off) IG=--100µA VDS=5V, ID=1µA --0.2 IDSS VDS=5V, VGS=0V 140* typ max --20 Unit V --0.6 Making : F --1.0 V 350* µA Continued on next page. * : The TF246 is classified by IDSS as follows : (unit : µA) Rank 4 5 IDSS 140 to 240 210 to 350 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 40407GB TI IM TC-00000316 No. A0729-1/4 TF246 Continued from preceding page. Parameter Symbol Ratings Conditions Forward Transfer Admittance yfs Input Capacitance Ciss VDS=5V, VGS=0V, f=1kHz VDS=5V, VGS=0V, f=1MHz Reverse Transfer Capacitance Crss VDS=5V, VGS=0V, f=1MHz min typ 0.5 Unit max 1.0 mS 3.5 pF 0.65 pF [Ta=25°C, VCC=4.5V, RL=1kΩ, Cin=15pF, See specified Test Circuit.] Voltage Gain Frequency Characteristic GV ∆GVV ∆Gvf Total Harmonic Distortion THD VIN=30mV, f=1kHz Output Noise Voltage VNO VIN=0V, A curve Reduced Voltage Characteristic VIN=10mV, f=1kHz --3.0 VIN=10mV, f=1kHz, VCC=4.5→1.5V --0.9 dB --3.5 dB --1.0 dB --110 dB f=1kHz to 110Hz Package Dimensions 1.2 % Test Circuit unit : mm (typ) 7055-001 Voltage gain Frequency Characteristic Distortion Reduced Voltage Characteristic ! 1kΩ 33µF + 15pF VCC=4.5V VCC=1.5V VTVM V 1 : Drain 2 : Source 3 : Gate ! Output Impedance SANYO : USFP ID -- VDS 500 450 450 400 400 350 300 VGS=0V 250 200 --0.1V 150 --0.2V 100 --0.3V --0.4V 50 0 1 2 3 4 5 6 ID -- VDS 500 Drain Current, ID -- µA Drain Current, ID -- µA B A 0 THD OSC 7 --0.5V 350 300 VGS=0V 250 200 --0.1V 150 100 --0.2V 50 --0.3V --0.4V 0 8 Drain-to-Source Voltage, VDS -- V 9 10 IT02310 0 1 2 3 --0.5V 4 Drain-to-Source Voltage, VDS -- V 5 IT03015 No. A0729-2/4 TF246 360 400 320 µA 50 3 = SS A ID 0µ 25 A 0µ 15 200 150 100 --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 Gate-to-Source Voltage, VGS -- V 120 0 --1.0 0 --0.8 --0.7 --0.6 --0.5 --0.4 --0.3 --0.2 Gate-to-Source Voltage, VGS -- V Cutoff Voltage, VGS(off) -- V 1.0 0.9 0.8 0.7 0.6 --0 IT02313 VDS=5V ID=1µA -0.75 1.1 --0.1 VGS(off) -- IDSS -0.80 VDS=5V VGS=0V f=1kHz 1.2 --0.9 IT02312 yfs -- IDSS 1.3 Forward Transfer Admittance, yfs -- mS 160 40 0 --0.7 -0.70 -0.65 -0.60 -0.55 -0.50 -0.45 0.5 -0.40 0 100 200 300 400 Drain Current, IDSS -- µA 500 IT02314 0 100 200 7 5 3 2 Reverse Transfer Capacitance, Crss -- pF 10 400 500 IT12277 Crss -- VDS 5 VGS=0V f=1MHz 300 Drain Current, IDSS -- µA Ciss -- VDS 2 Input Capacitance, Ciss -- pF 200 80 50 VGS=0V f=1MHz 3 2 1.0 7 5 3 2 0.1 1.0 7 2 1.0 3 5 7 2 10 Drain-to-Source Voltage, VDS -- V 7 3 Reduced Voltage Characteristic, ∆GVV -- dB GV : VCC=4.5V VIN=10mV RL=1.0kΩ f=1MHz IDSS : VDS=5.0V --1 --2 --3 --4 --5 --6 0 100 200 300 Drain Current, IDSS -- µA 400 500 IT09954 2 1.0 3 5 7 2 10 Drain-to-Source Voltage, VDS -- V IT03814 GV -- IDSS 0 Voltage Gain, GV -- dB 280 240 25 °C 350 300 VDS=5V Ta =7 5° C Drain Current, ID -- µA Drain Current, ID -- µA 450 250 ID -- VGS 400 VDS=5V --2 5° C ID -- VGS 500 3 IT03815 ∆GVV -- IDSS --0.5 ∆GVV : VCC=4.5V→1.5V VIN=10mV f=1kHz IDSS : VDS=5.0V --0.7 --0.9 --1.1 --1.3 --1.5 --1.7 0 100 200 300 Drain Current, IDSS -- µA 400 500 IT02321 No. A0729-3/4 TF246 THD -- VIN 250µA 10 150µA I DSS= 350µA 1.0 0.1 THD : VCC=4.5V VIN=30mV f=1MHz IDSS : VDS=5.0V 2.0 1.5 1.0 0.5 0 0 50 100 150 Input Voltage, VIN -- mV 200 0 --114 --115 --116 --117 --118 --119 Allowable Power Dissipation, PD -- mW --113 200 300 400 500 IT09955 Drain Current, IDSS -- µA PD -- Ta 35 VNO : VCC=4.5V VIN=0V, ACurve RL=1.0kΩ IDSS : VDS=5.0V --112 100 IT02316 VNO -- IDSS --111 Output Noise Voltage, VNO -- dB THD -- IDSS 2.5 THD : VCC=4.5V f=1kHz VIN=30mV IDSS : VDS=5.0V Total Harmonic Distortion, THD -- % Total Harmonic Distortion, THD -- % 100 30 25 20 15 10 5 0 --120 0 100 200 300 Drain Current, IDSS -- µA 400 500 IT02325 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT12179 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of April, 2007. Specifications and information herein are subject to change without notice. PS No. A0729-4/4