STC20DE90HV Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 W Preliminary Data General features Table 1. General features VCS(ON) IC RCS(ON) 1.2 V 20 A 0.06 Ω ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Squared RBSOA, up to 900 V ■ Very low CISS driven by RG = 47 Ω ■ In compliance with the 2002/93/EC European Directive 1 23 4 TO247-4L HV Description Internal schematic diagrams The STC20DE90HV is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STC20DE90HV is designed for use in power supply forward converter and three-phase power factor corrector applications. Applications ■ SMPS forward converter ■ Three-phase power factor corrector Order codes Part Number Marking Package Packing STC20DE90HV C20DE90HV TO247-4L HV Tube October 2006 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/11 www.st.com 11 STC20DE90HV Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 STC20DE90HV 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCS(SS) Collector-source voltage (V BS =VGS =0V) 900 V VBS(OS) Base-source voltage (IC =0, VGS =0V) 30 V VSB(OS) Source-base voltage (IC =0, VGS =0V) 9 V ± 20 V Collector current 20 A Collector peak current (tP < 5ms) 60 A Base current 5 A IBM Base peak current (tP < 1ms) 20 A Ptot Total dissipation at T c ≤ 25°C 139 W Tstg Storage temperature -40 to 150 °C 150 °C Value Unit 0.9 °C/W VGS IC ICM IB TJ Table 3. Symbol Rthj-case Gate-source voltage Max. operating junction temperature Thermal data Parameter Thermal resistance junction-case max 3/11 Electrical characteristics 2 STC20DE90HV Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 4. Symbol Parameter Test Conditions Min. Typ. Max. Unit ICS(SS) Collector-source current VCS(SS) =900V (VBS =V GS =0V) 100 µA IBS(OS) Base-source current (IC =0, VGS =0V) VBS(OS) =30V 10 µA ISB(OS) Source-base current (IC =0, VGS =0V) VSB(OS) =9V 100 µA IGS(OS) Gate-source leakage (VBS =0V) VGS = ± 20V 500 nA VCS(ON) Collector-source ON voltage VGS =10V IC =20A IB =4A VGS =10V IC =10A IB =1A V GS =10V IC =20A 4 VCS =1V V GS =10V IC =10A 12 DC current gain VBS(ON) Base-source ON voltage VGS =10V IC =20A IB =4A VGS =10V IC =10A IB =1A VGS(th) Gate threshold voltage VBS =V GS IB =250µA VCS =25V f =1MHz QGS(tot) ts tf ts tf VCS(dyn) Input capacitance Gate-source Charge INDUCTIVE LOAD Storage time Fall time INDUCTIVE LOAD Storage time Fall time Collector-source dynamic voltage (500ns) 1.2 0.65 VCS =1V hFE Ciss 4/11 Electrical characteristics VGS=VCB=0V VCS=25V VGS=10V VCB=0V IC =20A VGS =10V RG =47Ω VClamp =720V tp =4µs IC =10A IB =2A VGS =10V RG =47Ω VClamp =720V tp =4µs IC =10A IB =1A V V 1.8 1.2 1.5 2.2 V V 3 V 750 pF 12.5 nC 775 ns 7 ns 510 ns 5 ns 2.3 V VCC =VClamp =400V VGS =10V IC =10A IB = 2A R G =47Ω tpeak =500ns IBpeak =10A STC20DE90HV Electrical characteristics Table 4. Symbol VCS(dyn) VCSW Electrical characteristics Parameter Collector-source dynamic voltage (1µs) Test Conditions Min. Typ. Max. Unit VCC =VClamp =400V VGS =10V IC =10A IB = 2A RG =47Ω tpeak =500ns IBpeak =10A Maximum collectorsource voltage switched RG =47Ω without snubber hFE =5 IC =20A 1 900 V V Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5% 2.1 Electrical characteristics (curves) Figure 1. Output characteristics Figure 2. Dynamic collector-source saturation voltage Figure 3. DC current gain Figure 4. Gate threshold voltage vs temperature 5/11 Electrical characteristics 6/11 STC20DE90HV Figure 5. Collector-source On voltage Figure 6. Collector-source On voltage Figure 7. Base-source On voltage Figure 8. Base-source On voltage Figure 9. Inductive load switching time Figure 10. Inductive load switching time STC20DE90HV Electrical characteristics Figure 11. Reverse biased safe operating area 7/11 Package mechanical data 3 STC20DE90HV Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/11 STC20DE90HV Package mechanical data TO247-4L HV MECHANICAL DATA DIM. A A1 A2 MIN. 4.85 2.20 b 0.95 b2 c D D1 E e e1 L L1 L2 L3 øP S 2.50 0.40 23.85 15.45 2.54 5.08 10.20 2.20 mm. TYP 2.50 1.27 1.10 24 21.50 15.60 2.50 18.50 3 3.55 MAX. 5.15 2.60 1.30 2.90 0.80 24.15 15.75 10.80 2.80 3.65 5.50 7734874 9/11 Revision history 4 STC20DE90HV Revision history 26 Table 5. 10/11 Revision history Date Revision 10-Oct-2006 1 Changes First release. STC20DE90HV Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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