SUR820 thru SUR8100 Ultra Fast Recovery Epitaxial Diodes Dimensions TO-220AC A C A C C(TAB) A=Anode, C=Cathode, TAB=Cathode SUR820 SUR860 SUR8100 VRSM V 200 600 1000 Symbol IFRMS IFAVM IFRM IFSM Test Conditions Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Unit TVJ=TVJM TC=115oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM 16 8 130 A TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 100 110 85 95 A t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 50 50 36 37 A2s TVJ=150oC TVJ=150oC -40...+150 150 -40...+150 TVJ TVJM Tstg Ptot TC=25oC Md Mounting torque Weight A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Maximum Ratings TVJ=45oC I2t VRRM V 200 600 1000 Dim. o C 50 W 0.4...0.6 Nm 2 g SUR820 thru SUR8100 Ultra Fast Recovery Epitaxial Diodes Symbol Test Conditions Characteristic Values typ. max. Unit IR TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM 20 10 1.5 uA uA mA VF IF=8A; TVJ=150oC TVJ=25oC 1.3 1.5 V VTO For power-loss calculations only 0.98 V TVJ=TVJM 28.7 rT RthJC RthCK RthJA trr IRM m 2.5 K/W 0.5 60 IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC o _ VR=540V; IF=15A; -diF/dt=100A/us; L<0.05uH; TVJ=100 C 35 50 ns 2.5 2.8 A FEATURES APPLICATIONS ADVANTAGES * International standard package JEDEC TO-220AC * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling SUR820 thru SUR8100 Ultra Fast Recovery Epitaxial Diodes F ig. 1 F orward current vers us voltage drop. F ig. 2 R ecovery charge vers us -diF /dt. F ig. 3 P eak revers e current vers us -diF /dt. F ig. 4 Dynamic parameters vers us junction temperature. F ig. 5 R ecovery time vers us -diF /dt. F ig. 6 P eak forward voltage vers us diF /dt. F ig. 7 T rans ient thermal impedance junction to cas e.