STC05DE120HV Hybrid emitter switched bipolar transistor ESBT® 1200V - 5A - 0.18 W Target Specification General features Table 1. General features VCS(ON) IC RCS(ON) 0.9V 5A 0.18Ω ■ High voltage / low current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150kHz ■ Squared RBSOA, up to 1200V ■ Very low CISS driven by RG = 47Ω ■ In compliance with the 2002/93/EC European Directive 23 1 4 TO247-4L HV Internal schematic diagrams Description The STC05DE120HV is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STC05DE120HV is designed for use in aux flyback smps for any three phase application. Applications ■ Aux SMPS for three phase mains Order codes Part Number Marking Package Packaging STC05DE120HV C05DE120HV TO247-4L HV Tube May 2007 Rev 1 This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice. 1/9 www.st.com 9 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit 1200 V VCS(SS) Collector-source voltage (V BS =VGS =0V) VBS(OS) Base-source voltage (IC =0, VGS =0V) 30 V VSB(OS) Source-base voltage (IC =0, VGS =0V) 9 V ± 20 V Collector current 5 A Collector peak current (tP < 5ms) 8 A Base current 3 A IBM Base peak current (tP < 1ms) 5 A Ptot Total dissipation at T c ≤ 25°C 100 W Tstg Storage temperature -40 to 150 °C 125 °C Value Unit 1 °C/W VGS IC ICM IB TJ Table 3. Symbol Rthj-case 2/9 STC05DE120HV Gate-source voltage Max. operating junction temperature Thermal data Parameter Thermal resistance junction-case max STC05DE120HV 2 Electrical characteristics Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 4. Symbol Electrical characteristics Parameter Test Conditions Min. Typ. Max. Unit ICS(SS) Collector-source current VCS(SS) =1200V (VBS =V GS =0V) 100 µA IBS(OS) Base-source current (IC =0, VGS =0V) VBS(OS) =30V 10 µA ISB(OS) Source-base current (IC =0, VGS =0V) VSB(OS) =9V 100 µA IGS(OS) Gate-source leakage (VBS =0V) VGS = ± 20V 500 nA VCS(ON) Collector-source ON voltage 1.5 1.2 V V 1.3 1 1.7 1.4 V V 2.2 3 V VGS =10V IC =5A VGS =10V IC =2.5A IB =0.25A IB =1A VCS =1V VGS =10V IC =5A 3 5 VCS =1V V GS =10V IC =2.5A 7 10 hFE DC current gain VBS(ON) Base-source ON voltage VGS =10V IC =5A VGS =10V IC =2.5A IB =0.25A VGS(th) Gate threshold voltage VBS =V GS IB =250µA Input capacitance VCS =25V f =1MHz Ciss QGS(tot) VCSW Gate-source Charge 0.9 0.7 IB =1A VCS=15V VGS=10V VCB=0V IC =1.8A Maximum collectorsource voltage switched RG =47Ω without snubber hFE =5 1.5 V GS=0V IC = 5A 1200 750 pF 12.5 nC V Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5% 3/9 Electrical characteristics 2.1 4/9 STC05DE120HV Electrical characteristics (curves) Figure 1. Output characteristics Figure 2. Gate threshold voltage vs temperature Figure 3. Reverse biased safe operating area Figure 4. DC current gain Figure 5. Collector-source On voltage Figure 6. Collector-source On voltage STC05DE120HV Figure 7. Electrical characteristics Base-source On voltage Figure 8. Base-source On voltage 5/9 Package mechanical data 3 STC05DE120HV Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 6/9 STC05DE120HV Package mechanical data TO247-4L HV MECHANICAL DATA DIM. A A1 A2 MIN. 4.85 2.20 b 0.95 b2 c D D1 E e e1 L L1 L2 L3 øP S 2.50 0.40 23.85 15.45 2.54 5.08 10.20 2.20 mm. TYP 2.50 1.27 1.10 24 21.50 15.60 2.50 18.50 3 3.55 MAX. 5.15 2.60 1.30 2.90 0.80 24.15 15.75 10.80 2.80 3.65 5.50 7734874 7/9 Revision history 4 STC05DE120HV Revision history 26 Table 5. 8/9 Revision history Date Revision 09-May-2007 1 Changes First release. STC05DE120HV Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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