SPN8822 Common-Drain Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8822 is the Common-Drain Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter FEATURES 20V/8.0A,RDS(ON)= 24mΩ@VGS= 4.5V 20V/7.0A,RDS(ON)= 32mΩ@VGS= 2.5V 20V/3.0A,RDS(ON)= 42mΩ@VGS= 1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSSOP – 8P package design PIN CONFIGURATION(SOP – 8P) PART MARKING 2007/04/23 Ver.1 Page 1 SPN8822 Common-Drain Dual N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 D1 / D2 Drain 2 S1 Source 3 S1 Source 4 G1 5 G2 Gate Gate 6 S2 Source 7 S2 Source 8 D1 / D2 Drain ORDERING INFORMATION Part Number Package Part Marking SPN8822TS8RG TSSOP- 8P 8822 SPN8822TS8TG TSSOP- 8P 8822 ※ SPN8822TS8RG : 13” Tape Reel ; Pb – Free ※ SPN8822TS8TG : Tube ; Pb – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 20 V Gate –Source Voltage VGSS ±12 V Continuous Drain Current(TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature TA=25℃ TA=70℃ ID 7.4 6.0 A IDM 30 A IS 2.3 A PD 1.5 0.9 W TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 80 ℃/W 2007/04/23 Ver.1 Page 2 SPN8822 Common-Drain Dual N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage 0.4 1.0 VDS=0V,VGS=±12V VDS=20V,VGS=0V VDS=20V,VGS=0V TJ=55℃ VDS≥5V,VGS=4.5V VGS= 4.5V,ID=8.0A RDS(on) VGS= 2.5V,ID=7.0A VGS= 1.8V,ID=3.0A gfs VDS=15V,ID=5.0A VSD 20 IS=1.0A,VGS=0V ±100 1 10 6 V nA uA A 0.020 0.024 0.032 30 0.024 0.032 0.042 0.8 1.2 10 13 Ω S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Time Turn-Off Time 2007/04/23 Ver.1 VDS=10V,VGS=4.5V ID≡5.0A 2.1 VDS=10V,VGS=0V f=1MHz td(off) tf 600 pF 120 100 td(on) tr nC 1.4 VDD=10V,RL=10Ω ID≡1.0A,VGEN=4.5V RG=6Ω 15 25 40 60 45 65 30 40 ns Page 3 SPN8822 Common-Drain Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2007/04/23 Ver.1 Page 4 SPN8822 Common-Drain Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2007/04/23 Ver.1 Page 5 SPN8822 Common-Drain Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2007/04/23 Ver.1 Page 6 SPN8822 Common-Drain Dual N-Channel Enhancement Mode MOSFET TSSOP- 8P PACKAGE OUTLINE 2007/04/23 Ver.1 Page 7 SPN8822 Common-Drain Dual N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 9F-5, No.3-2, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2007/04/23 Ver.1 Page 8