Hybride Impuls-Laserdiode mit integrierter Treiberstufe 70 W Spitzenleistung Hybrid Pulsed Laser Diode with Integrated Driver Stage 70 W Peak Power Lead (Pb) Free Product - RoHS Compliant SPL LL90_3 Besondere Merkmale Features • Kleines kostengünstiges Plastik-Gehäuse • Integriert sind ein FET und Kondensatoren zur Impulsansteuerung • InAlGaAs/GaAs kompressiv verspannte Quantenfilmstruktur • Hochleistungslaser mit „Large-Optical-Cavity“ (LOC) Struktur • Nanostack Lasertechnologie beinhaltet mehrere epitaktisch integrierte Emitter • Laserapertur 200 µm x 10 µm • Schneller Betrieb (< 30 ns Impulsbreite) • Niedrige Versorgungsspannung (< 20 V) • • • • • Low cost, small size plastic package Integrated FET and capacitors for pulse control Strained InAlGaAs/GaAs QW-structures High power large-optical-cavity laser structure Nanostack laser technology including multiple epitaxially stacked emitters • Laser aperture 200 µm x 10 µm • High-speed operation (< 30 ns pulse width) • Low supply voltage (< 20 V) Applications • • • • Anwendungen • • • • Entfernungsmessung Sicherheit, Überwachung Beleuchtung, Zündung Test- und Messsysteme Safety advices Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 “Safety of laser products”. Sicherheitshinweise Je nach Betriebsart emittieren diese Bauteile hochkonzentrierte, nicht sichtbare InfrarotStrahlung, die gefährlich für das menschliche Auge sein kann. Produkte, die diese Bauteile enthalten, müssen gemäß den Sicherheitsrichtlinien der IEC-Norm 60825-1 behandelt werden. Typ Range finding Security, surveillance Illumination, ignition Testing and measurement Wellenlänge Bestellnummer Type Opt. Spitzenausgangsleistung Number of Emitters Opt. Peak Power Wavelength Ordering Code SPL LL90_3 3 905 nm Q65110A1009 2007-04-04 Emitteranzahl 70 W 1 SPL LL90_3 Grenzwerte (kurzzeitiger Betrieb) (TA = 25 °C) Maximum Ratings (short time operation) Parameter Parameter Symbol Symbol Werte Values Einheit Unit min. max. – 80 W 20 V Spitzenausgangsleistung Peak output power Popt Ladespannung (VG = 15 V) Charge voltage (VG = 15 V) VC Gate-Spannung Gate voltage VG – 20 + 20 V Tastverhältnis Duty cycle d.c. – 0.1 % Betriebstemperatur Operating temperature Top - 40 + 85 °C Temperatur des pn-Übergangs1) Junction temperature1) Tj – + 105 °C Lagertemperatur Storage temperature Tstg - 40 + 100 °C Löttemperatur (tmax = 10 s) Soldering temperature (tmax = 10 s) Ts – + 260 °C 1) limited due to plastic package, not due to laser chip 2007-04-04 2 SPL LL90_3 Optische Kennwerte (TA = 25 °C) Optical Characteristics Parameter Parameter Symbol Symbol Werte Values Einheit Unit min. typ. max. Zentrale Emissionswellenlänge1) Emission wavelength1) λ 895 905 915 nm Spektralbreite (Halbwertsbreite)1) Spectral width (FWHM)1) Δλ – 7 – nm Spitzenausgangsleistung1) Peak output power1) Popt 60 70 80 W Ladespannung an der Laserschwelle Charge Voltage at laser threshold UC, th 4.0 4.5 5.0 V Pulsbreite (Halbwertsbreite)1), 2) Pulse width (FWHM)1), 2) tp 37 40 43 ns Anstiegs- und Abfallzeit (10% … 90%)1), 2) Rise and fall time (10% … 90%)1), 2) tr , tf 7 40 10 45 13 50 ns ns Jitter (bzgl. Triggersignal und optischem Puls) Jitter (regarding trigger signal and optical pulse) tj 170 500 ps Austrittsöffnung Aperture size w×h – 200 × 10 – μm2 Strahldivergenz (Halbwertsbreite) parallel zum pn-Übergang1) Beam divergence (FWHM) parallel to pn junction1) θ|| 12 15 18 Grad deg. Strahldivergenz (Halbwertsbreite) senkrecht zum θ⊥ pn-Übergang1) Beam divergence (FWHM) perpendicular to pn-junction1) 27 30 33 Grad deg. Temperaturkoeffizient der Wellenlänge Temperature coefficient of wavelength ∂λ / ∂T – 0.30 0.33 nm/K Thermischer Widerstand Thermal resistance Rth – 200 – K/W Einschaltpunkt der Gate-Spannung Switch on gate voltage VG on – 5.0 – V 1) 2) Werte beziehen sich auf folgende Standardbetriebsbedingung: >50 ns Pulsbreite, 1 kHz Pulswiederholrate, 18.5 V Ladespannung, 15 V Gate-Spannung und 25°C Umgebungstemperatur. Der Laser wird angesteuert mit dem MOSFET-Treiber Elantec EL7104C. Values refer to the following standard operating conditions: >50 ns pulse width, 1 kHz pulse repetition rate, 18.5 V charge voltage, 15 V gate voltage and 25 °C ambient temperature. The laser is driven by the MOSFET driver Elantec EL7104C. Die Schaltgeschwindigkeit ist abhängig von Strom und Geschwindigkeit, mit der die Gate-Kapazität (typ. 300 pF) des internen Transistors geladen wird. Kürzere Pulsbreiten, Anstiegs- und Abfallzeiten erhält man bei Trigger-Pulsbreiten <50 ns. Dies bewirkt jedoch auch eine reduzierte optische Spitzenleistung. Switching speed at gate depends on current and speed, charging the gate capacitance (typ. 300 pF) of the internal transistor. Reduced pulse widths, rise and fall times occur at trigger pulse widths <50 ns. This also reduces the optical peak power. 2007-04-04 3 SPL LL90_3 Optical output power Popt vs charge voltage Vc (tp = 30 ns) OHL01909 90 W 80 Popt Optical spectrum, relative intensity Irel vs. wavelength (Popt = 70 W, tp = 30 ns) λ OHL01910 100 1 kHz I rel 70 75 25 kHz 60 50 50 40 30 25 20 10 0 0 5 10 15 0 860 20 V 25 900 920 nm 940 λ VC Far-field distribution parallel to junction Irel vs. angle θ|| (Popt = 70 W, tp = 30 ns) 1.00 880 Far-field distribution perpendicular to junction Irel vs. angle θ⊥ (Popt = 70 W, tp = 30 ns) OHL01906 1.00 OHL01907 I rel I rel 0.75 0.75 0.50 0.50 0.25 0.25 0 -40 -30 -20 -10 0 0 -40 -30 -20 -10 0 10 20 Deg 40 θ θ 2007-04-04 10 20 Deg 40 4 SPL LL90_3 Optical output power Popt vs charge voltage Vc (tp = 30 ns, PRF = 1 kHz) at different ambient temperature Tamb TA = -40 ˚C -20 ˚C 0 ˚C 20 ˚C 40 ˚C 60 ˚C 80 ˚C 100 ˚C 70 60 50 VC max 16 14 12 8 30 6 20 4 10 2 0 5 10 15 0 -40 -20 0 20 V 25 VC OHL01905 80 W 70 Popt 60 40 1 kHz 10 kHz 20 kHz 30 kHz 40 kHz 30 20 10 0 -40 -20 0 20 40 60 80 ˚C 120 TA 2007-04-04 20 40 60 80 ˚C 120 TA Peak output power at maximum charge voltage Vc, max vs. ambient temperature Tamb at various rep rates (tp = 30 ns) 50 10 kHz 20 kHz 30 kHz 40 kHz 10 40 0 OHL01904 20 V 18 OHL01908 90 W 80 Popt Maximum allowed charge voltage Vc , max vs. ambient temperature Tamb at various rep rates (tp=30 ns, Vc<=19 V, chip temperature<=105 °C) 5 SPL LL90_3 Maßzeichnung Package Outlines 2.4 (0.094) ±0.2 (0.008) 4.9 (0.193) ±0.2 (0.008) +0.4 (0.016) 0.3 (0.012) -0.25 (0.010) 1.35 (0.053) ±0.2 (0.008) (12.2 (0.480)) Laser Diode 5 (0.197) ±0.2 (0.008) 0 (0.000) ±0.1 (0.004) 1 2 3 8.6 (0.339) ±0.4 (0.016) R0.3 (0.012) (2.35 (0.093)) 1.05 (0.041) ±0.3 (0.012) 2.5 (0.098) ±0.2 (0.008) Surface not flat 0 (0.000) ±0.1 (0.004) 0 (0.000) ±0.1 (0.004) 2 1.8 (0.071) 1.2 (0.047) 25.2 (0.992) 24.2 (0.953) 0 (0.000) ±0.1 (0.004) 1 VC FET Trigger G VG D S C Laser diode 0.5 (0.020) ±0.1 (0.004) 0.6 (0.024) spacing 2.54 (0.100) 0.4 (0.016) 3 GND GWOY6124 R0.25 (0.010) Maße in mm (inch) / Dimensions in mm (inch). 2007-04-04 6 C SPL LL90_3 Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com © All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2007-04-04 7