SPN1026 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1026 is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 320mA DC and can deliver pulsed currents up to 1.0A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. APPLICATIONS z Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. z High saturation current capability. Direct Logic-Level Interface: TTL/CMOS z Battery Operated Systems z Solid-State Relays FEATURES 60V/0.50A , RDS(ON)= 4.0Ω@VGS=10V 60V/0.30A , RDS(ON)= 5.0Ω@VGS=5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-563 / SC-89-6L package design PIN CONFIGURATION( SOT-563 / SC-89-6L ) PART MARKING 2006/12/18 Ver.2 Page 1 SPN1026 Dual N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 S1 Source 1 2 G1 Gate 1 3 D2 Drain 2 4 S2 Source 2 5 G2 Gate 2 6 D1 Drain1 ORDERING INFORMATION Part Number Package SPN1026S56RG SOT-563 Part Marking D ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPN1026S56RG : Tape Reel ; Pb – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 60 V Gate –Source Voltage - Continuous VGSS ±20 V Gate –Source Voltage - Non Repetitive ( tp < 50μs) VGSS ±40 V ID 0.32 A IDM 1.0 A IS 0.25 A PD 0.30 W TJ -55 ~ 150 ℃ Storage Temperature Range TSTG -55 ~ 150 ℃ Thermal Resistance-Junction to Ambient RθJA 375 ℃/W Continuous Drain Current(TJ=150℃) TA=25℃ Pulsed Drain Current (∗) Continuous Source Current(Diode Conduction) Power Dissipation TA=25℃ Operating Junction Temperature (∗) Pulse width limited by safe operating area 2006/12/18 Ver.2 Page 2 SPN1026 Dual N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. 1.7 2.5 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS VDS=0V,VGS=±20V VDS=50V,VGS=0V VDS=50V,VGS=0V TJ= 85℃ VGS=10V,ID=0.50A VGS= 5V,ID=0.30A 60 1.0 ±100 10 100 2.8 3.5 4.0 5.0 0.32 1.4 Drain-Source On-Resistance RDS(on) Source-drain Current Source-drain Current (pulsed) Forward Transconductance ISD ISDM (2) Gfs(1) VDS = 10 V, ID = 0.5 A 0.6 Diode Forward Voltage VSD(1) VGS = 0 V, IS = 0.2A 0.85 1.5 1.4 2.0 V nA nA Ω A A S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 6 td(on) 5 Turn-On Time Turn-Off Time tr td(off) VDD = 30 V, ID = 1 A, VGS = 5 V nC 0.8 0.5 VDS = 25 V, f = 1 MHz, VGS = 0 VDD = 30 V, ID = 0.5 A RG = 4.7Ω VGS = 4.5 V tf 43 pF 20 15 ns 7 8 (1) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. 2006/12/18 Ver.2 Page 3 SPN1026 Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2006/12/18 Ver.2 Page 4 SPN1026 Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2006/12/18 Ver.2 Page 5 SPN1026 Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2006/12/18 Ver.2 Page 6 SPN1026 Dual N-Channel Enhancement Mode MOSFET TYPICAL TESTING CIRCUIT 2006/12/18 Ver.2 Page 7 SPN1026 Dual N-Channel Enhancement Mode MOSFET SOT-563 PACKAGE OUTLINE 2006/12/18 Ver.2 Page 8 SPN1026 Dual N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 9F-5, No.3-2, Park Street NanKang District (NKSP), Taipei, Taiwan, 115, R.O.C Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2006/12/18 Ver.2 Page 9