SNA-200S Product Description DC-6.5 GHz, Cascadable GaAs HBT MMIC Amplifier Sirenza Microdevices’ SNA-200 is a GaAs monolithic broadband amplifier (MMIC) in die form. At 1950 MHz, this amplifier provides 15.5dB and 13.8dB at 6000 MHz. These unconditionally stable amplifiers are designed for use as general purpose 50 ohm gain blocks. Its small size (0.350m x 0.345mm) and gold metallization make it an ideal choice for use in hybrid circuits. The SNA-200 is 100% DC tested and sample tested for RF performance. External DC decoupling capacitors determine low frequency response. The use of an external resistor allows for bias flexibility and stability. The SNA-200 is supplied in gel paks at 100 devices per pak. Also available in packaged form (SNA-276 & SNA-286) Output Power vs. Frequency 14 Product Features • Cascadable 50 Ohm Gain Block • 15.5dB Gain, +12dBm P1dB • 1.5:1 Input and Output VSWR • Operates From Single Supply • Through wafer via for ground Applications 13 dBm • Broadband Driver Amplifier • IF Amplifier or gain stage for VSAT, LMDS, 12 11 WLAN, and Cellular Systems 10 0.5 1 1.5 2 4 6 8 10 GHz Symbol Parameter Units Frequency 850 MHz 1950 MHz 2400 MHz 6000 MHz 0.1-4.0 GHz P1dB Output Power at 1dB Compression [2] OIP 3 Output Third Order Intercept Point [2] NF RL ISOL VD Noise Figure Input / Output Return Loss Reverse Isolation Device Operating Voltage [1] dB dB dB dB dB GHz dBm dBm dBm dBm dB dB dB V Device Operating Current [1] Device Gain Temperature Coefficient Thermal Resistance (junction to backside) mA dB/°C °C/W Gp Small Signal Power Gain [2] GF Gain Ripple BW3dB 3dB Bandwidth ID dG/dT RTH , j-b VS = 8 V Test Conditions: R = 110 Ohms BIAS 1950 MHz 6000 MHz 1950 MHz 6000 MHz 1950 MHz 1950 0.1-7.0 GHz Min. 13.5 12.3 10 10.2 22 21.5 3.1 35 Typ. 15.5 15.0 15.0 13.8 +/- 1.0 7 12.0 12.2 25.0 24.5 5.5 12.9 20 3.6 Max. 16.5 15.3 4.1 40 -0.0018 270 45 ID = 40 mA Typ. OIP3 Tone Spacing = 1.2 MHz, Pout per tone = 0 dBm TL = 25ºC, ZS = ZL = 50 Ohms, [1] 100% DC Tested, [2] Sample Tested The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-103300 Rev B Preliminary SNA-200S DC-6.5 GHz Cascadable MMIC Amplifier Typical Performance at 25° C (Vds =3.8V, Ids = 40mA) (data includes bond wires) |S21| vs. Frequency |S11| vs. Frequency dB 0 16 -5 15 dB -10 14 13 -15 12 -20 0.5 1 1.5 2 4 6 8 0.5 10 1 1.5 2 6 8 10 8 10 8 10 |S22| vs. Frequency |S12| vs. Frequency dB 4 GHz GHz 0 0 -5 -5 -10 dB -10 -15 -15 -20 -20 -25 0.5 1 1.5 2 4 6 8 0.5 10 1 1.5 2 4 6 GHz GHz Noise Figure vs. Frequency TOIP vs. Frequency 8 27 7.5 26 7 dB dBm 6.5 25 6 24 5.5 5 23 0.1 0.5 1 1.5 2 4 6 8 10 0.5 1 1.5 2 4 6 GHz GHz Absolute Maximum Ratings Parameter Absolute Limit Max. Device Current (ID) 70 mA Max. Device Voltage (VD) 6V Max. RF Input Power +20 dBm Max. Junction Temp. (TJ) +200°C Operating Temp. Range (TL) -40°C to +85°C Max. Storage Temp. +150°C Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l 303 South Technology Court Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-103300 Rev B Preliminary SNA-200S DC-6.5 GHz Cascadable MMIC Amplifier Application Circuit Element Values Typical Application Circuit R BIAS 1 uF 1000 pF CD Frequency (Mhz) Reference Designator 500 850 1950 2400 3500 CB 220 pF 100 pF 68 pF 56 pF 39 pF CD 100 pF 68 pF 22 pF 22 pF 15 pF LC 68 nH 33 nH 22 nH 18 nH 15 nH Recommended Bias Resistor Values for ID = 40mA RBIAS = (VS - VD) / ID LC 1 RF in 4 SNA-200 CB 3 RF out Supply Voltage (VS) 6V 8V 10V 12V RBIAS 60Ω 110Ω 160Ω 210Ω Note: RBIAS provides DC bias stability over temperature. CB 2 GND VIA RFIN Die Thickness - 0.004 [0.1] Dimensions - inches [mm] RFOUT Suggested Bonding Arrangement (above configuration used for S-parameter data) Simplified Schematic of MMIC For recommended handling, die attach, and bonding methods, see the following application note at www.sirenza.com. AN-041 (PDF) Handling of Unpackaged Die Part Number Ordering Information Part Number Gel Pack SNA-200S 1 0 0 p cs. p e r p a ck Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Die are shipped per Sirenza application note AN-039 Visual Criteria For Unpackaged Die 303 South Technology Court Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-103300 Rev B