Si6876EDQ New Product Vishay Siliconix Bi-Directional N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY rS1S2(on) (Ω) IS1S2 (A) 0.025 @ VGS = 10 V 6.2 D TrenchFETr Power MOSFET D Ultra-Low rSS(on) D 4-kV ESD Protection 0.030 @ VGS = 4.5 V 5.7 APPLICATIONS 0.050 @ VGS = 2.5 V 4.5 VS1S2 (V) 30 D Battery Protection Circuitry - 1-2 Cell Li+/LiP S1 G1 TSSOP-8 S1 1 S1 2 S1 3 G1 4 D Si6876EDQ R 8 S2 7 S2 6 S2 5 G2 R G2 Top View S2 N-Channel ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Source1—Source2 Voltage Gate-Source Voltage Continuous Source1—Source2 Current (TJ = 150_C)a Pulsed Source1-Source2 Current T30 VGS "12 IS1S2 TA = 70_C Operating Junction and Storage Temperature Range PD Unit V 6.2 5.0 5.0 4.0 ISM TA = 25_C Maximum Power Dissipationa Steady State VS1S2 TA = 25_C TA = 70_C 10 secs A 30 1.78 1.19 1.14 0.76 TJ, Tstg W _C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec. M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Source)a Steady State Steady State RthJA RthJF Typical Maximum 55 70 85 105 35 45 Unit _C/W Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. Document Number: 71822 S-20802—Rev. B, 01-Jul-02 www.vishay.com 1 Si6876EDQ New Product Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Min VGS(th) VDS = VGS, ID = 250 mA 0.45 Typ Max Unit 1.5 V VDS = 0 V, VGS = "4.5 V "500 nA VDS = 0 V, VGS = "12 V "10 mA VDS = 24 V, VGS = 0 V 1 VDS = 24 V, VGS = 0 V, TJ = 70_C 25 Static Gate Threshold Voltage Gate Body Leakage Gate-Body IGSS Zero Gate Voltage Source Current IS1S2 On-State Source Currenta IS(on) Source1-Source2 On-State Resistancea VDS w 5 V, VGS = 4.5 V rS1S2(on) Forward Transconductancea gfs mA 20 A VGS = 10 V, ID = 6.2 A 0.020 0.025 VGS = 4.5 V, ID = 5.7 A 0.024 0.030 VGS = 2.5 V, ID = 4.5 A 0.037 0.050 VDS = 10 V, ID = 6.2 A 39 W S Dynamicb Turn-On Delay Time td(on) Rise Time 1.3 tr Turn-Off Delay Time VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W td(off) Fall Time tf 2.5 3 6 10 20 5.2 10 ms Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate-Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 10,000 1,000 I GSS - Gate Current (mA) I GSS - Gate Current (mA) 8 6 4 2 100 TJ = 150_C 10 1 TJ = 25_C 0.1 0.01 0 0 4 8 12 16 VGS - Gate-to-Source Voltage (V) www.vishay.com 2 20 0 4 8 12 16 20 VGS - Gate-to-Source Voltage (V) Document Number: 71822 S-20802—Rev. B, 01-Jul-02 Si6876EDQ New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 30 30 VGS = 10 thru 3 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 18 12 2V 6 18 12 TC = 125_C 6 25_C - 55_C 0 0 1 2 3 4 0 0.0 5 0.5 VDS - Drain-to-Source Voltage (V) 2.0 2.5 3.0 On-Resistance vs. Junction Temperature On-Resistance vs. Drain Current 1.6 r DS(on) - On-Resistance (W) (Normalized) 0.056 VGS = 10 V 0.042 VGS = 4.5 V 0.028 VGS = 2.5 V 0.014 0 5 10 15 20 25 1.4 1.2 1.0 0.8 0.000 0.6 - 50 30 - 25 ID - Drain Current (A) 0 25 50 75 100 125 150 125 150 TJ - Junction Temperature (_C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 0.4 0.10 0.2 0.08 IS1S2 = 6.2 A V GS(th) Variance (V) r DS(on) - On-Resistance ( W ) 1.5 VGS - Gate-to-Source Voltage (V) 0.070 r DS(on) - On-Resistance ( W ) 1.0 0.06 0.04 IS1S2 = 250 mA - 0.0 - 0.2 - 0.4 0.02 0.00 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) Document Number: 71822 S-20802—Rev. B, 01-Jul-02 10 - 0.6 - 50 - 25 0 25 50 75 100 TJ - Temperature (_C) www.vishay.com 3 Si6876EDQ New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power 100 Power (W) 80 60 40 20 0 0.01 0.1 1 10 30 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 85_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 www.vishay.com 4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71822 S-20802—Rev. B, 01-Jul-02