SII150N06 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol Conditions IGBT Wechselrichter/ IGBT Inverter VCES IC TC= 25(60)oC ICRM TC= 60oC, tP =1ms Ptot TC= 25oC, Tvj= 150oC VGES Diode Wechselrichter/ Diode Inverter IF IFRM tP =1ms VR=0V, tP =10ms; TVj=125oC It Module Isolation/ Module Isolation VISOL RMS, f=50Hz, t=1min, NTC connect to Baseplate 2 Values Units 600 180(150) 300 V 595 _ +20 W 150 300 A A 2.3 As 2500 V A A V 2 Sirectifier R SII150N06 NPT IGBT Modules TC = 25oC, unless otherwise specified Characteristics Symbol Conditions IGBT Wechselrichter/ IGBT Inverter VGEth VGE = VCE, IC = 3.0mA ICES VGE = 0; VCE = 600V, Tj = 25(125)oC IGES VCE = 0; VGE=20V VCE(sat) Cies Cres LCE Isc td(on) tr td(off) tf Eon(Eoff) min. typ. max. Units 4.5 5.5 1(1000) 6.5 500 400 V uA nA IC =150A; VGE = 15V; Tj = 25(125)oC under following conditions VGE = 0, VCE = 25V, f = 1MHz 1.95(2.2) 2.45(-) o tP 10uS, VGE 15V, Tvj = 125 C , Vcc = 360V under following conditions: VCC = 300V, IC = 150A RGon = RGoff =1.5 , , Tj = 25(125)oC VGE = ± 15V Tj = 25(125)oC, LS = 15nH RCC'+EE' RthJC Diode Wechselrichter/ Diode Inverter under following condition VF IF = 150A; VGE = 0V; Tj = 25(125)oC IRM IF = 150A; Tj = 25(125)oC Qr -di/dt = 5600A/us Erec VGE = -10V, VR=300V nF 40 675 nH A 115(125) 28(30) 200(225) 25(35) ns ns ns ns 2.3(4.6) mJ 1.0 m 0.21 K/W 1.6(-) 0.4 0.02 -40...+125 150 -40...+125 TVJ TVJM Tstg Mechanical Data Ms to heatsink M6 Mt to terminals M5 w 6.5 0.6 1.25(1.2) 180(215) 11(19) -(4.7) RthJC RthCK 3 2.5 V V A uC mJ K/W o 5 5 325 C Nm Nm g Sirectifier R SII150N06 NPT IGBT Modules Sirectifier R SII150N06 NPT IGBT Modules Sirectifier R