SCP6C60 SemiWell Semiconductor Silicon Controlled Rectifiers Symbol 3. Gate Features ▼ ○ ○ 2. Anode ○ 1. Cathode Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 6 A ) ◆ Low On-State Voltage (1.4V(Typ.)@ ITM) ◆ Non-isolated Type ◆ TO-220 General Description Standard gate triggering SCR is suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system. 1 2 3 Absolute Maximum Ratings Symbol ( TJ = 25°C unless otherwise specified ) Parameter Condition Ratings Units 600 V 3.8 A VDRM Repetitive Peak Off-State Voltage IT(AV) Average On-State Current Half Sine Wave : TC = 109 °C IT(RMS) R.M.S On-State Current 180° Conduction Angle 6 A ITSM Surge On-State Current 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive 66 A I2t for Fusing t = 8.3ms 21 A2 s I2 t di/dt Critical rate of rise of on-state current 50 A/㎲ PGM Forward Peak Gate Power Dissipation 5 W 0.5 W PG(AV) Forward Average Gate Power Dissipation IFGM Forward Peak Gate Current 2 A VRGM Reverse Peak Gate Voltage 5.0 V Operating Junction Temperature - 40 ~ 125 °C Storage Temperature - 40 ~ 150 °C TJ TSTG Aug, 2003. Rev. 1 Information offers: http://www.kkg.com.cn Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved. 1/5 SCP6C60 Electrical Characteristics Symbol ( TC = 25 °C unless otherwise noted ) Items Ratings Conditions Unit Min. Typ. Max. ─ ─ ─ ─ 10 200 ㎂ ─ ─ 1.6 V TC = 25 °C ─ ─ 15 mA TC = 25 °C ─ ─ 1.5 V 0.2 ─ ─ V 200 ─ ─ V/㎲ ─ ─ 20 mA VAK = VDRM IDRM Repetitive Peak Off-State Current VTM Peak On-State Voltage (1) IGT Gate Trigger Current (2) VGT Gate Trigger Voltage (2) VGD Non-Trigger Gate Voltage (1) VAK = 12 V, RL=100 Ω dv/dt Critical Rate of Rise Off-State Voltage Linear slope up to VD = VDRM 67% , Gate open TJ = 125°C TC = 25 °C TC = 125 °C ITM = 9 A tp=380㎲ VAK = 6 V(DC), RL=10 Ω VD = 6 V(DC), RL=10 Ω TC = 125 °C IT = 100mA, Gate Open IH Holding Current TC = 25 °C Rth(j-c) Thermal Impedance Junction to case ─ ─ 2.5 °C/W Rth(j-a) Thermal Impedance Junction to Ambient ─ ─ 60 °C/W ※ Notes : 1. Pulse Width = 1.0 ms , Duty cycle ≤ 1% 2. RGK Current not Included in measurement. 2/5 Information offers: http://www.kkg.com.cn SCP6C60 Fig 1. Gate Characteristics Fig 2. Maximum Case Temperature Max. Allowable Case Temperature [ C] 160 1 o 10 VGM(5V) Gate Voltage [V] PGM(5W) PG(AV)(0.5W) 0 IGM(2A) 10 o 25 C VGD(0.2V) -1 10 -1 0 10 1 10 2 10 3 10 140 o 100 π 2π θ 80 360° 60 θ : Conduction Angl e 40 0 4 10 θ = 180 120 10 1 2 3 4 5 Average On-State Current [A] Gate Current [mA] Fig 3. Typical Forward Voltage Fig 4. Thermal Response 2 10 On-State Current [A] o Transient Thermal Impedance [ C/W] 10 1 10 o 125 C o 25 C 0 10 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1 0.1 0.01 -4 10 4.0 -3 -2 10 1 10 2 10 10 1 0 50 100 o Junction Temperature[ C] 150 o IGT(25 C) o IGT(t C) VGT(25oC) o 0 10 Fig 6. Typical Gate Trigger Current vs. Junction Temperature 10 VGT(t C) 10 Time (sec) Fig 5. Typical Gate Trigger Voltage vs. Junction Temperature 0.1 -50 -1 10 On-State Voltage [V] 1 0.1 -50 0 50 100 150 o Junction Temperature[ C] Information offers: http://www.kkg.com.cn 3/5 SCP6C60 Fig 7. Typical Holding Current Fig 8. Power Dissipation 7 Max. Average Power Dissipation [W] IH(25oC) o IH(t C) 10 1 0.1 -50 o 5 θ = 30 o θ = 60 o θ = 90 θ = 120 o o 4 3 2 1 0 0 50 100 o Junction Temperature[ C] 4/5 θ = 180 6 150 0 1 2 Average On-State Current [A] Information offers: http://www.kkg.com.cn 3 4 SCP6C60 TO-220 Package Dimension Dim. mm Typ. Min. 9.7 6.3 9.0 12.8 1.2 A B C D E F G H I J K L M N O Max. 10.1 6.7 9.47 13.3 1.4 Inch Typ. Min. 0.382 0.248 0.354 0.504 0.047 1.7 2.5 0.067 0.098 3.0 1.25 2.4 5.0 2.2 1.25 0.45 0.6 3.4 1.4 2.7 5.15 2.6 1.55 0.6 1.0 φ 0.118 0.049 0.094 0.197 0.087 0.049 0.018 0.024 0.134 0.055 0.106 0.203 0.102 0.061 0.024 0.039 3.6 E B Max. 0.398 0.264 0.373 0.524 0.055 0.142 H A φ I F C M L G 1 D 2 1. Cathode 2. Anode 3. Gate 3 J N O K Information offers: http://www.kkg.com.cn 5/5