PRELIMINARY SFF75N06-28 SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 * Fax: (562) 404-1773 30 AMP 1/ 60 VOLTS 25mS N-CHANNEL POWER MOSFET DESIGNER'S DATA SHEET FEATURES: • Rugged construction with poly silicon gate • Low RDS (on) and high transconductance • Excellent high temperature stability • Very fast switching speed • Fast recovery and superior dv/dt performance • Increased reverse energy capability • Low input transfer capacitance for easy paralleling • Hermetically sealed surface mount package • TX, TXV and Space Level screening available 28 PIN CLCC MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE UNIT Drain to Source Voltage VDS 100 Volts Drain to Gate Voltage (RGS = 1.0 mS) VDG 60 Volts Gate to Source Voltage VGS ±20 Volts ID 30 Amps Top & Tstg -55 to +150 R 2JC 3.5 PD 35 Continuous Drain Current @ TC = 25oC Operating and Storage Temperature Thermal Resistance, Junction to Case (All Four) Total Device Dissipation @ TC = 25 oC PACKAGE OUTLINE: 28 PIN CLCC PIN OUT: SOURCE: 1, 15 - 28 DRAIN: 5 - 11 GATE: 2, 3, 13, 14 NOTE: All drain/source pins must be connected on the PC board in order to maximize current carrying capability and to minimize RDS (on) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0001A o o C C/W Watts PRELIMINARY SFF75N06-28 SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 * Fax: (562) 404-1773 ELECTRICAL CHARACTERISTICS @ TJ =25oC (Unless Otherwise Specified) SYMBOL MIN TYP MAX UNIT BVDSS 60 - - V RDS(on) - 23 25 27 25 27 - mS VGS(th) 2 - 4 V gfs 15 35 - S( É ) IDSS - - 10 100 :A At rated VGS IGSS - - 100 100 nA VGS =10 Volts 50% rated VDS Rated ID VDD =50% rated VDS rated ID RG = 6.2 S Qg Qgs Qgd td (on) tr td (off) tf - 83 13 40 20 35 65 40 100 20 55 40 70 130 80 VSD - 1.47 1.6 V RATING Drain to Source Breakdown Voltage (VGS =0 V, ID =250:A) Drain to Source 60% of Rated ID, TC = 25oC ON State Resistance 2/ Rated ID, TC = 25oC (VGS = 10 V) 60% of Rated ID, TC = 150oC Gate Threshold Voltage (VDS =VGS, ID =250:A) Forward Transconductance (VDS > ID(on) x RDS (on) Max, IDS =60% rated ID) Zero Gate Voltage Drain Current (VDS =80% rated VDS, VGS =0 V, T A = 25oC ) (VDS =80% rated VDS, VGS =0 V, TA = 125oC ) Gate to Source Leakage Forward Gate to Source Leakage Reverse Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off DELAY Time Fall Time Diode Forward Voltage (IS = rated ID, VGS = 0V, TJ = 25oC) nC nsec Diode Reverse Recovery Time Reverse Recovery Charge TJ =25oC IF = 10A di/dt = 100A/:sec trr - 70 150 nsec Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS =0 Volts VDS =25 Volts f =1 MHz Ciss Coss Crss - 2600 700 260 2900 1100 275 pF For thermal derating curves and other characteristic curves please contact SSDI Marketing Department. NOTES: 1/ Die Rating: 75Amps. 2/ All package pins of the same terminations (Drain/Source/Gate) must be connected together to minimize RDS(on) and maximize current carrying capability.