IRF IRF7101

PD - 9.871B
IRF7101
HEXFET® Power MOSFET
Adavanced Process Technology
Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Description
l
l
S1
G1
S2
G2
1
8
2
7
3
6
4
5
D1
VDSS = 20V
D1
D2
RDS(on) = 0.10Ω
D2
ID = 3.5A
Top View
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
S O -8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt‚
Junction and Storage Temperature Range
Sodering Temperature, for 10 seconds
3.5
2.3
14
2.0
0.016
± 12
3.0
-55 to + 150
300(1.6mm from case)
Units
A
W
W/°C
V
V/nS
°C
Thermal Resistance Ratings
Parameter
RθJA
Maximum Junction-to-Ambient „
Min.
Typ.
Max
–––
–––
62.5
Units
°C/W
8/25/97
IRF7101
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Q gs
Q gd
td(on)
tr
t d(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
20
–––
–––
–––
1.0
1.1
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.025
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.0
10
24
30
Max. Units
Conditions
–––
V
V GS = 0V, I D = 250µA
––– V/°C Reference to 25°C, I D = 1mA
0.10
VGS = 10V, I D = 1.8A ƒ
Ω
0.15
VGS = 4.5V, ID = 1.0A ƒ
3.0
V
VDS = VGS , ID = 250µA
–––
S
V DS = 15V, ID = 3.5A ƒ
2.0
VDS = 20V, VGS = 0V
µA
250
VDS = 16V, VGS = 0V, TJ = 125 °C
100
VGS = 12V
nA
-100
V GS = - 12V
15
I D = 1.8A
2.0
nC VDS = 16V
3.6
VGS = 10V
–––
VDD = 10V
–––
I D = 1.8A
ns
–––
R G = 8.2Ω
–––
RD = 26Ω
D
LD
Internal Drain Inductance
–––
4.0
–––
LS
Internal Source Inductance
–––
6.0
–––
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
320
250
75
–––
–––
–––
nH
pF
Between lead,6mm(0.25in.)
from package and center
of die contact
VGS = 0V
VDS = 15V
ƒ = 1.0MHz
G
Source-Drain Ratings and Characteristics
IS
ISM
VSD
t rr
Q rr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 2.0
showing the
A
G
integral reverse
––– ––– 14
p-n junction diode.
S
––– ––– 1.2
V
TJ = 25°C, IS = 1.7A, VGS = 0V ƒ
––– 36
54
ns
TJ = 25°C, IF = 1.7A
––– 41
62
nC di/dt = 100A/µs ƒ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ ISD ≤ 3.5A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
„ Surface mounted on FR-4 board, t ≤ 10sec.
S
IRF7101
C,
IRF7101
IRF7101
(Z thJA )
100
D = 0.50
0.20
10
Thermal Response
0.10
0.05
0.02
PDM
0.01
1
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.0001
0.001
10
0.01
0.1
1
10
t1, Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
IRF7101
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+
- V DD
10%
VGS
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
td(on)
Fig 11a. Switching Time Test Circuit
tr
t d(off)
tf
Fig 11b. Switching Time Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
.2µF
12V
10V
.3µF
D.U.T.
QGS
+
V
- DS
QGD
VG
VGS
3mA
IG
ID
Charge
Current Sampling Resistors
Fig 12a. Gate Charge Test Circuit
Fig 12b. Basic Gate Charge Waveform
IRF7101
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

•
•
•
•
RG
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 13. For N-Channel HEXFETS
ISD
*
IRF7101
Package Outline
SO8 Outline
INCHES
DIM
D
-B-
5
8
7
6
5
1
2
3
4
e
6X
0.25 (.010)
M
A M
MIN
A
.0532
.0688
1.35
1.75
A1
.0040
.0098
0.10
0.25
B
.014
.018
0.36
0.46
C
.0075
.0098
0.19
0.25
D
.189
.196
4.80
4.98
E
.150
.157
3.81
3.99
e
K x 45°
e1
e1
θ
A
-C-
0.10 (.004)
L
8X
A1
B 8X
0.25 (.010)
MAX
5
H
E
-A-
6
C
8X
.050 BASIC
1.27 BASIC
.025 BASIC
0.635 BASIC
.2284
.2440
5.80
K
.011
.019
0.28
0.48
L
0.16
.050
0.41
1.27
8°
0°
8°
0°
6.20
RECOMMENDED FOOTPRINT
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
6
MAX
H
θ
M C A S B S
MILLIMETERS
MIN
0.72 (.028 )
8X
6.46 ( .255 )
1.78 (.070)
8X
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
1.27 ( .050 )
3X
Part Marking Information
SO8
E X A M P LE : TH IS IS A N IR F 7 101
3 12
IN T E R N A TI ON A L
R E C T IF IE R
LO G O
D A T E C O D E (Y W W )
Y = LA S T D IG IT O F T H E YE A R
W W = W EEK
XX X X
F 7 101
T OP
PART NUMBER
W AFER
LO T C O D E
(LA S T 4 D IG IT S )
B O T TO M
IRF7101
Tape & Reel Information
SO8
Dimensions are shown in millimeters (inches)
T ER M IN A L N U M B E R 1
12 .3 ( .48 4 )
11 .7 ( .46 1 )
8 .1 ( .3 18 )
7 .9 ( .3 12 )
F E ED D IR E C T IO N
N O TE S:
1 . CO N TRO LL IN G D IM E N SIO N : M ILLIM E TE R.
2 . A LL DIM E NS IO NS A R E S HO W N IN M ILL IM E TER S (INC HE S ).
3 . O UTL IN E C O NFO RM S TO E IA - 48 1 & E IA -5 41 .
33 0. 00
(12 .99 2)
M A X.
1 4. 40 ( .5 66 )
1 2. 40 ( .4 88 )
N O T ES :
1. C O N T R O LL IN G D IM E N S IO N : M IL LIM E T ER .
2. O U T L IN E C O N F O R M S T O E IA -48 1 & E IA -54 1.
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http://www.irf.com/
Data and specifications subject to change without notice.
8/97