FDMS8670AS ® N-Channel PowerTrench SyncFET tm TM 30V, 42A, 3.0mΩ Features General Description Max rDS(on) = 3.0mΩ at VGS = 10V, ID = 23A The FDMS8670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Max rDS(on) = 4.7mΩ at VGS = 4.5V, ID = 18A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode Applications MSL1 robust package design Synchronous Rectifier for DC/DC Converters RoHS Compliant Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Telecom secondary side rectification Pin 1 S D D D S S G D D 5 4 G D 6 3 S D 7 2 S D 8 1 S Power 56 (Bottom view) MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25°C -Continuous (Silicon limited) TC = 25°C -Continuous TA = 25°C TJ, TSTG ±20 V 127 (Note 1a) -Pulsed PD Units V 42 23 A 200 Single Pulse Avalanche Energy EAS Ratings 30 384 Power Dissipation TC = 25°C Power Dissipation TA = 25°C 78 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1.6 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS8670AS Device FDMS8670AS ©2008 Fairchild Semiconductor Corporation FDMS8670AS Rev.C1 Package Power 56 1 Reel Size 13’’ Tape Width 12mm Quantity 3000units www.fairchildsemi.com FDMS8670AS N-Channel PowerTrench® SyncFETTM August 2008 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 30 V ID = 10mA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V 500 µA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA 3.0 V 28 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1mA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 10mA, referenced to 25°C -5 VGS = 10V, ID = 23A 2.4 3.0 rDS(on) Static Drain to Source On Resistance VGS = 4.5V, ID = 18A 3.5 4.7 VGS = 10V, ID = 23A, TJ = 125°C 3.5 4.7 VDD = 10V, ID = 23A 143 gFS Forward Transconductance 1.0 1.7 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz 2718 3615 pF 1537 2045 pF 343 515 pF Ω 0.9 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0V to 10V Qg Total Gate Charge VGS = 0V to 4.5V Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 15V, ID = 23A, VGS = 10V, RGEN = 6Ω VDD = 15V, ID = 23A 14 26 ns 5 10 ns 32 52 ns 4 10 ns 39 55 nC 20 28 nC 7.2 nC 4.0 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS =2A (Note 3) IF = 23A, di/dt = 300A/µs 0.4 0.7 V 39 63 ns 48 77 nC NOTES: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b. 125°C/W when mounted on a minimum pad of 2 oz copper. a. 50°C/W when mounted on a 1 in2 pad of 2 oz copper. 2. Starting TJ = 25°C, L = 3mH, IAS = 16A, VDD = 30V, VGS =10V. 3. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. ©2008 Fairchild Semiconductor Corporation FDMS8670AS Rev.C1 2 www.fairchildsemi.com FDMS8670AS N-Channel PowerTrench® SyncFETTM Electrical Characteristics TJ = 25°C unless otherwise noted 4.0 200 VGS = 4.5V 160 ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10V VGS = 4V 120 VGS = 3.5V 80 VGS = 3V 40 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 0 0 1 2 3 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 3.5 VGS = 3V 3.0 VGS = 3.5V 2.5 VGS = 4V 2.0 VGS = 4.5V 1.5 VGS = 10V 1.0 0.5 4 0 40 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 160 200 14 ID = 23A VGS = 10V 1.6 10 ID = 23A 8 6 TJ = 125oC 4 2 TJ = 25oC 0 -50 -25 0 25 50 75 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 12 100 125 150 2 TJ, JUNCTION TEMPERATURE (oC) IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VDS = 5V 105 70 TJ = 125oC 35 TJ = 25oC 1 2 TJ = -55oC 3 6 8 10 Figure 4. On-Resistance vs Gate to Source Voltage 175 140 4 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature ID, DRAIN CURRENT (A) 120 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.8 0 80 ID, DRAIN CURRENT(A) 100 VGS = 0V 10 TJ = 125oC TJ = 25oC 1 0.1 TJ = -55oC 0.01 0.001 0.0 4 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2008 Fairchild Semiconductor Corporation FDMS8670AS Rev.C1 3 1.2 www.fairchildsemi.com FDMS8670AS N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25°C unless otherwise noted 5000 ID = 23A 8 Ciss VDD = 10V 6 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 15V VDD = 20V 4 1000 Coss Crss 2 f = 1MHz VGS = 0V 100 0.1 0 0 10 20 30 40 1 Figure 7. Gate Charge Characteristics 140 120 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) 30 Figure 8. Capacitance vs Drain to Source Voltage 40 10 TJ = 25oC TJ = 125oC 100 VGS = 10V 80 Limited by Package 60 VGS = 4.5V 40 20 o 1 0.01 RθJC = 1.6 C/W 0.1 1 10 100 0 25 600 50 tAV, TIME IN AVALANCHE(ms) P(PK), PEAK TRANSIENT POWER (W) 1ms 10ms 1 THIS AREA IS LIMITED BY rDS(on) 0.1 100ms SINGLE PULSE TJ = MAX RATED 1s 10s RθJA = 125oC/W DC o TA = 25 C 0.01 0.01 0.1 1 10 100 150 2000 1000 VGS = 10V SINGLE PULSE RθJA = 125oC/W TA = 25oC 100 10 1 0.5 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t, PULSE WIDTH (s) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2008 Fairchild Semiconductor Corporation FDMS8670AS Rev.C1 125 Figure 10. Maximum Continuous Drain Current vs Case Temperature 100µs 10 100 o 300 100 75 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS8670AS N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25°C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.001 0.0005 -4 10 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve ©2008 Fairchild Semiconductor Corporation FDMS8670AS Rev.C1 5 www.fairchildsemi.com FDMS8670AS N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25°C unless otherwise noted SyncFET Schottky Body Diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. CURRENT: 0.8A/Div IDSS, REVERSE LEAKAGE CURRENT (A) Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverse recovery characteristic of the FDMS8670AS. TIME: 25nS/Div 0.01 TJ = 125oC 0.001 TJ = 100oC 0.0001 1E-5 TJ = 25oC 1E-6 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) Figure 15. SyncFET Body Diode Reverse Leakage vs Drain to Source Voltage Figure 14. FDMS8670AS SyncFET Body Diode Reverse Recovery Characteristics ©2008 Fairchild Semiconductor Corporation FDMS8670AS Rev.C1 6 www.fairchildsemi.com FDMS8670AS N-Channel PowerTrench® SyncFETTM Typical Characteristics (continued) FDMS8670AS N-Channel PowerTrench® SyncFETTM ©2008 Fairchild Semiconductor Corporation FDMS8670AS Rev.C1 7 www.fairchildsemi.com Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * ® PDP SPM™ Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world, 1mW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ ® The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Farichild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I35 ©2008 Fairchild Semiconductor Corporation FDMS8670AS Rev.C1 www.fairchildsemi.com FDMS8670AS N-Channel PowerTrench® SyncFETTM TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks.