TM SuperFET FCB20N60F 600V N-CHANNEL FRFET Features Description • 650V @ TJ = 150°C SuperFETTM is,Farichild’ s proprietary,new generation ofhigh voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss,provide superior switching performance,and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. • Typ.Rds(on)=0.15: • Fast RecoveryType (trr = 160ns) • Ultra low gate charge (typ.Qg=75nC) • Low effective output capacitance (typ.Coss.eff=165pF) • 100% avalanche tested D D G G S S Absolute Maxim um Ratings Sym bol Param eter FCB20N60F VDSS Drain-Source Voltage ID Drain Current -Continuous(TC = 25qC) -Continuous(TC = 100qC) IDM Drain Current -Pulsed VGSS Gate-Source voltage EAS Single Pulsed Avalanche Energy (Note 1) (Note 2) Unit 600 V 20 12.5 A A 60 A r 30 V 690 mJ IAR Avalanche Current (Note 1) 20 A EAR Repetitive Avalanche Energy (Note 1) 20.8 mJ dv/dt PeakDiode Recoverydv/dt (Note 3) PD Power Dissipation (TC = 25qC) -Derate above 25qC TJ,TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8”from Case for 5 Seconds 50 V/ns 208 1.67 W W/qC -55 to +150 qC 300 qC Therm alCharacteristics Sym bol Param eter FCB20N60F Unit 0.6 qC/W Thermal Resistance,Junction-to-Ambient* 40 qC/W Thermal Resistance,Junction-to-Ambient 62.5 qC/W RTJC Thermal Resistance,Junction-to-Case RTJA* RTJA * When mounted on the minimum pad size recommended (PCB Mount) ©2006 Fairchild Semiconductor Corporation FCB20N60F Rev.A2 1 www.fairchildsemi.com FCB20N60F 600V N-CHANNEL FRFET December 2006 Device Marking Device Package Reel Size Tape W idth Quantity FCB20N60F FCB20N60FTM D2-Pak 330mm 24m 800 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min Typ Max Units OffCharacteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250PA, TJ = 25qC 600 -- -- V VGS = 0V, ID = 250PA, TJ = 150qC -- 650 -- V ID = 250PA, Referenced to 25qC -- 0.6 -- V/qC 'BVDSS / 'TJ Breakdown Voltage Temperature Coefficient BVDSS Drain-Source Avalanche Breakdown Voltage VGS = 0V, ID = 20A -- 700 -- V IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V VDS = 480V, TC = 125qC --- --- 10 100 PA PA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA 3.0 -- 5.0 V -- 0.15 0.19 : -- 17 -- S -- 2370 3080 pF -- 1280 1665 pF -- 95 -- pF On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250PA RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 10A gFS Forward Transconductance VDS = 40V, ID = 10A (Note 4) Dynamic Characteristics Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 65 85 pF Coss eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 165 -- pF VDD = 300V, ID = 20A RG = 25: -- 62 135 ns -- 140 290 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 4, 5) VDS = 480V, ID = 20A VGS = 10V (Note 4, 5) -- 230 470 ns -- 65 140 ns -- 75 98 nC -- 13.5 18 nC -- 36 -- nC 20 A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 60 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 20A -- -- 1.4 V trr Reverse Recovery Time 160 -- ns Reverse Recovery Charge VGS = 0V, IS = 20A dIF/dt =100A/Ps -- Qrr -- 1.1 -- PC (Note 4) NOTES: 1. Repetitive Rating:Pulse width limited by maximum j unction temperature 2. IAS = 10A, VDD = 50V, RG = 25:, Starting TJ = 25qC 3. ISD d 20A, di/dt d1200A/Ps, VDD d BVDSS, Starting TJ = 25qC 4. Pulse Test:Pulse width d 300Ps, Duty Cycle d 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FCB20N60F Rev. A2 2 www.fairchildsemi.com FCB20N60F 600V N-CHANNEL FRFET Package Marking and Ordering Information Figure 1.On-Region Characteristics Figure 2.Transfer Characteristics 2 10 VGS 2 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 1 10 10 ID , Drain Current [A] ID, Drain Current [A] Top : 0 10 * Notes : 1. 250Ps Pulse Test o 1 150 C 10 o 25 C o -55 C 0 10 * Note: 1. VDS = 40V o 2. TC = 25 C -1 0 10 2. 250Ps Pulse Test 1 10 10 2 4 VDS, Drain-Source Voltage [V] Figure 3.On-Resistance Variation vs. Drain Current and Gate Voltage 10 2 10 IDR , Reverse Drain Current [A] RDS(ON) [:], 8 Figure 4.Body Diode Forward Voltage Variation vs.Source Current and Temperatue 0.4 Drain-Source On-Resistance 6 VGS , Gate-Source Voltage [V] 0.3 VGS = 10V 0.2 VGS = 20V 0.1 1 10 o 150 C 0 10 o 25 C * Notes : 1. VGS = 0V 2. 250Ps Pulse Test o * Note : TJ = 25 C 0.0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 0.2 0.4 0.6 0.8 Figure 5.Capacitance Characteristics Capacitance [pF] VGS, Gate-Source Voltage [V] Crss = Cgd 7000 Coss 5000 * Notes : 1. VGS = 0 V 4000 2. f = 1 MHz Ciss 3000 2000 Crss 10 VDS = 250V VDS = 400V 8 6 4 2 * Note : ID = 20A 0 10 0 1 0 10 10 20 30 40 50 60 70 80 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] FCB20N60F Rev. A2 1.6 VDS = 100V Coss = Cds + Cgd 8000 0 -1 10 1.4 12 Ciss = Cgs + Cgd (Cds = shorted) 9000 1000 1.2 Figure 6.Gate Charge Characteristics 10000 6000 1.0 VSD , Source-Drain Voltage [V] ID, Drain Current [A] 3 www.fairchildsemi.com FCB20N60F 600V N-CHANNEL FRFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2. ID = 250 PA Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 0.5 2. ID = 20 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 0 o 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9-1. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 25 Operation in This Area is Limited by R DS(on) 2 10 10 ID, Drain Current [A] ID, Drain Current [A] 20 100 Ps 1 1 ms 10 ms DC 0 10 * Notes : o 1. TC = 25 C -1 10 15 10 5 o 2. TJ = 150 C 3. Single Pulse -2 10 0 10 1 2 10 0 25 3 10 10 50 75 100 125 150 o VDS, Drain-Source Voltage [V] TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve 10 0 ZTJC(t), Thermal Response D = 0 .5 0 .2 10 * N o te s : o -1 1 . Z T JC (t) = 0 .6 C /W M a x. 0 .1 2 . D u ty F a c to r, D = t 1 /t 2 0 .0 5 3 . T J M - T C = P D M * Z T JC (t) 0 .0 2 PDM t1 10 -2 10 0 .0 1 -5 t2 s in g le p u ls e 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] FCB20N60F Rev. A2 4 www.fairchildsemi.com FCB20N60F 600V N-CHANNEL FRFET Typical Performance Characteristics (Continued) FCB20N60F 600V N-CHANNEL FRFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FCB20N60F Rev. A2 5 www.fairchildsemi.com FCB20N60F 600V N-CHANNEL FRFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FCB20N60F Rev. A2 6 www.fairchildsemi.com (0.4 0) D2PAK 4 .5 0 r0.2 0 9 .9 0 r0.2 0 + 0.10 1.2 7 2 .00 r0.10 r0.3 0 (0.7 5 ) ~3 0q 0.8 0 r0.10 r0.10 2 .5 4 T Y P 2 .5 4 15 .3 0 r0.3 0 0.10 r0.15 2 .4 0 r0.2 0 4 .9 0 r0.2 0 1.4 0 r0.2 0 9 .2 0 r0.2 0 1.2 0 r0.2 0 1.3 0 – 0.05 q + 0.10 0.5 0 – 0.05 2 .5 4 T Y P 9 .2 0 r0.2 0 (2 X R 0.4 5 ) 4 .9 0 r0.2 0 15 .3 0 r0.3 0 10.00 r0.2 0 (7 .2 0) (1.7 5 ) 10.00 r0.2 0 (8 .00) (4 .4 0) 0.8 0 r0.10 Dimensions in Millimeters FCB20N60F Rev. A2 7 www.fairchildsemi.com FCB20N60F 600V N-CHANNEL FRFET Mechanical Dimensions FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i -Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROW IRE™ MSX™ MSXPro™ Across the board.Around the world.™ The Power Franchise® Programmable Active Droop™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SW ITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPW M™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC® UniFET™ VCX™ W ire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES W ITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY,FUNCTION,OR DESIGN.FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS,NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’ S W ORLDW IDE TERMS AND CONDITIONS,SPECIFICALLY THE W ARRANTY THEREIN,W HICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’ S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS W ITHOUT THE EXPRESS W RITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1.Life support devices or systems are devices or systems which, (a)are intended for surgical implant into the body,or (b)support or sustain life,or (c)whose failure to perform when properly used in accordance with instructions for use provided in the labeling,can be reasonably expected to result in significant inj ury to the user. 2.A critical component is anycomponent of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system,or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Pr o duct St at us Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development.Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data,and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications.Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22